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    IXFN210N20 Search Results

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    IXFN210N20 Price and Stock

    Littelfuse Inc IXFN210N20P

    MOSFET N-CH 200V 188A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN210N20P Tube 487 1
    • 1 $41.79
    • 10 $32.384
    • 100 $32.384
    • 1000 $32.384
    • 10000 $32.384
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    Newark IXFN210N20P Bulk 301 1
    • 1 $40.95
    • 10 $32.67
    • 100 $32.67
    • 1000 $32.67
    • 10000 $32.67
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    RS IXFN210N20P Bulk 8 Weeks 10
    • 1 -
    • 10 $50.09
    • 100 $50.09
    • 1000 $50.09
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    IXYS Corporation IXFN210N20P

    MOSFET Modules 188 Amps 200V 0.0105 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN210N20P 1,311
    • 1 $41.79
    • 10 $32.38
    • 100 $32.38
    • 1000 $32.38
    • 10000 $32.38
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    TTI IXFN210N20P Tube 300
    • 1 -
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    • 100 -
    • 1000 $32.38
    • 10000 $32.38
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    New Advantage Corporation IXFN210N20P 295 1
    • 1 -
    • 10 -
    • 100 $75.11
    • 1000 $70.1
    • 10000 $70.1
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    IXYS Integrated Circuits Division IXFN210N20P

    MOSFET MOD.188A 200V N-CH SOT-227B HIPERFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFN210N20P 295
    • 1 $54.71124
    • 10 $51.132
    • 100 $51.132
    • 1000 $51.132
    • 10000 $51.132
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    IXFN210N20 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN210N20P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 188A SOT-227B Original PDF

    IXFN210N20 Datasheets Context Search

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    IXFN210N20

    Abstract: IXFN210N20P
    Text: IXFN210N20P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXFN210N20P 200ns E153432 100ms 210N20P 6-10-A IXFN210N20 IXFN210N20P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXFN210N20P 200ns E153432 100ms 210N20P 6-10-A

    IXFN210N20

    Abstract: IXFN210N20P
    Text: Preliminary Technical Information IXFN210N20P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXFN210N20P 200ns OT-227 E153432 100ms 210N20P IXFN210N20 IXFN210N20P