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    IXFX80N60P3 Search Results

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    IXFX80N60P3 Price and Stock

    Littelfuse Inc IXFX80N60P3

    MOSFET N-CH 600V 80A PLUS247-3
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    DigiKey IXFX80N60P3 Tube 202 1
    • 1 $17.95
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    Newark IXFX80N60P3 Bulk 300
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    IXYS Corporation IXFX80N60P3

    MOSFETs 600V 80A 0.07Ohm PolarP3 Power MOSFET
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    Mouser Electronics IXFX80N60P3 300
    • 1 $17.95
    • 10 $17.23
    • 100 $11.82
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    Future Electronics IXFX80N60P3 Tube 44 Weeks 30
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    IXFX80N60P3 Tube 44 Weeks 30
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    TTI IXFX80N60P3 Tube 300
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    TME IXFX80N60P3 1
    • 1 $18.02
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    New Advantage Corporation IXFX80N60P3 34 1
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    IXYS Integrated Circuits Division IXFX80N60P3

    MOSFET DIS.80A 600V N-CH PLUS247 POLAR3 THT
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    Ozdisan Elektronik IXFX80N60P3 42
    • 1 $20.18972
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    • 100 $18.8689
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    IXFX80N60P3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFX80N60P3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 80A PLUS247 Original PDF

    IXFX80N60P3 Datasheets Context Search

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    Siemens DIODE E 1240

    Abstract: IXFK80N60P3 IXFX80N60P3
    Text: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V


    Original     		PDF IXFK80N60P3 IXFX80N60P3 O-264 250ns PLUS247 80N60P3 Siemens DIODE E 1240 IXFX80N60P3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFK80N60P3 IXFX80N60P3 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFK80N60P3 IXFX80N60P3 250ns O-264 80N60P3

    IXFK80N60P3

    Abstract: 80n60
    Text: IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 600V 80A  77m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXFK80N60P3 IXFX80N60P3 250ns O-264 80N60P3 IXFK80N60P3 80n60