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    IXGE Price and Stock

    onsemi STRUIX-GEVB

    EVAL BOARD STRUIX SHIELD
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    DigiKey STRUIX-GEVB Box 1
    • 1 $26.04
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    Avnet Americas STRUIX-GEVB Bulk 25
    • 1 -
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    • 100 $25
    • 1000 $25
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    Mouser Electronics STRUIX-GEVB
    • 1 $26.17
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    • 100 $26.17
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    Newark STRUIX-GEVB Bulk 8
    • 1 -
    • 10 $32.8
    • 100 $28
    • 1000 $27.2
    • 10000 $27.2
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    TME STRUIX-GEVB 1
    • 1 $33.03
    • 10 $33.03
    • 100 $33.03
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    Avnet Silica STRUIX-GEVB 53 Weeks 1
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    IXYS Corporation IXGE200N60B

    IGBT Transistors 175 Amps 600V 2.1 Rds
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    Mouser Electronics IXGE200N60B
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    Hirose Electric Co Ltd HT803/IXG-10S-CVL-70

    Manual Crimping Tool Type HT803 - 22 to 28AWG.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com HT803/IXG-10S-CVL-70 2
    • 1 $467.61
    • 10 $442.67
    • 100 $442.67
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    Hirose Electric Co Ltd IXG-10P-DC

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    Onlinecomponents.com IXG-10P-DC
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    • 100 $0.3077
    • 1000 $0.2424
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    IXGE Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGE200N60B IXYS TRANS IGBT MODULE N-CH 600V 175A 4ISOPLUS 227 Original PDF
    IXGE200N60B IXYS HiPerFAST IGBT Original PDF
    IXGE200N60B IXYS 600V HiPerFAST IGBT Original PDF

    IXGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200n60

    Abstract: robot control
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 200N60B 160ns 227TM 728B1 200n60 robot control

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 200N60B 160ns 227TM IXGN200N60B 405B2

    Untitled

    Abstract: No abstract text available
    Text: IXGE50N60Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE50N60Z

    200n60

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat = 600 V = 175 A = 2.1 V E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 200N60B 227TM 25crease 728B1 200n60

    Untitled

    Abstract: No abstract text available
    Text: IXGE75N80Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)800 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE75N80Z

    Untitled

    Abstract: No abstract text available
    Text: IXGE75N100Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE75N100Z

    Untitled

    Abstract: No abstract text available
    Text: IXGE50N90Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)900 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE50N90Z

    Untitled

    Abstract: No abstract text available
    Text: IXGE50N80Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)800 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE50N80Z

    Untitled

    Abstract: No abstract text available
    Text: IXGE75N50Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)500 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE75N50Z

    200N60B

    Abstract: 200n60 IXGN200N60B SOT227B package SOT227B 123B16
    Text: HiPerFASTTM IGBT IXGE 200N60B E Symbol Test Conditions VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns ISOPLUS 227TM (IXGE) Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 200N60B 160ns 227TM IXGN200N60B 405B2 200N60B 200n60 SOT227B package SOT227B 123B16

    Untitled

    Abstract: No abstract text available
    Text: IXGE50N50Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)500 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE50N50Z

    Untitled

    Abstract: No abstract text available
    Text: IXGE50N100Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE50N100Z

    Untitled

    Abstract: No abstract text available
    Text: IXGE75N60Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE75N60Z

    Untitled

    Abstract: No abstract text available
    Text: IXGE75N90Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)900 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE75N90Z

    f g megamos

    Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
    Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		PDF ofMIL-S-19500 MIL-M-38510. f g megamos megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE

    f g megamos

    Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
    Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


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    led 7 doan

    Abstract: sla 6102 LT 8521 lg 7607 DB82 JL - 012C Z8000 8C08 5252 F 0906 LT 210D
    Text: Advanced Micro Computers A subsidiary of Advanced Micro D evices A m 96/4016 Evaluation Board Monitor Listing REVISION RECORD REVISION A DESCRIPTION In itial Is s u e 1 2 /3 /7 9 B S e c o n d P rin tin g ( 1 /7 /8 0 ) Publication No. 0 0 6801 46 Address com m ents concerning


    OCR Scan     		PDF Am96/4016 Z8000 000STK: led 7 doan sla 6102 LT 8521 lg 7607 DB82 JL - 012C 8C08 5252 F 0906 LT 210D

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127503 08/97 International MT.KB SERIES IÖR Rectifier THREE PHASE CONTROLLED BRIDGE Features • Package fully com patible with the industry standard INT-A-pak pow er m odules series ■ High therm al conductivity package, electrically insulated case


    OCR Scan     		PDF 53-93-113M I27503

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    Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren
    Text: m n t k if ^ s j e le lK t e n a r iH - c g|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder | betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.


    OCR Scan     		PDF