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    IXGF Price and Stock

    IXYS Corporation IXGF32N170

    IGBT 1700V 44A 200W I4PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGF32N170 Tube 298 1
    • 1 $23.35
    • 10 $23.35
    • 100 $23.35
    • 1000 $23.35
    • 10000 $23.35
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    Mouser Electronics IXGF32N170 139
    • 1 $23.35
    • 10 $23.33
    • 100 $15.93
    • 1000 $15.93
    • 10000 $15.93
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    Newark IXGF32N170 Bulk 1
    • 1 $25.84
    • 10 $22.9
    • 100 $20.08
    • 1000 $20.08
    • 10000 $20.08
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    TTI IXGF32N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $21.24
    • 10000 $21.24
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    TME IXGF32N170 1
    • 1 $27.52
    • 10 $22.1
    • 100 $19.65
    • 1000 $19.65
    • 10000 $19.65
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    IXYS Corporation IXGF30N400

    IGBT 4000V 30A 160W I4-PAK
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    DigiKey IXGF30N400 Tube
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    TTI IXGF30N400 Tube 25
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    Velocity Electronics IXGF30N400 14
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    IXYS Corporation IXGF20N300

    IGBT 3000V 22A ISOPLUSI4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGF20N300 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $35.42627
    • 10000 $35.42627
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    TME IXGF20N300 15 1
    • 1 $62.47
    • 10 $56.2
    • 100 $49.72
    • 1000 $49.72
    • 10000 $49.72
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    IXYS Corporation IXGF20N250

    IGBT 2500V 23A ISOPLUSI4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGF20N250 Tube 25
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    • 100 $47.1756
    • 1000 $47.1756
    • 10000 $47.1756
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    Mouser Electronics IXGF20N250
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    • 1000 $50.36
    • 10000 $50.36
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    IXYS Corporation IXGF25N250

    IGBT 2500V 30A 114W I4-PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGF25N250 Tube 300
    • 1 -
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    • 100 -
    • 1000 $89.01063
    • 10000 $89.01063
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    Mouser Electronics IXGF25N250
    • 1 -
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    • 100 -
    • 1000 $98.82
    • 10000 $98.82
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    TTI IXGF25N250 Tube 300
    • 1 -
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    • 100 -
    • 1000 $118.68
    • 10000 $118.68
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    Find more IXGF price and stock on Findchips.com

    IXGF Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGF20N250 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 23A 100W I4-PAK Original PDF
    IXGF20N300 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 22A 100W I4-PAK Original PDF
    IXGF25N250 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 30A 114W I4-PAK Original PDF
    IXGF25N300 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 27A 114W I4-PAK Original PDF
    IXGF30N400 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 4000V 30A 160W I4-PAK Original PDF
    IXGF32N170 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 44A 200W I4PAC Original PDF
    IXGF36N300 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 36A 160W I4-PAK Original PDF

    IXGF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGF30N400

    Abstract: 30n400 pulser
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGF30N400 VCES = 4000V = 30A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 4000 V VGES Continuous ± 20 V VGEM Transient ± 30 V


    Original     		PDF IXGF30N400 IC110 30N400 11-23-09-C IXGF30N400 pulser

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGF20N300 High Voltage IGBT VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000


    Original     		PDF IXGF20N300 20N250 4P-P528 2-04-09-A

    IGBT 1500v 50A

    Abstract: IGBT 1500v 25A
    Text: Advance Technical Information IXGF25N300 High Voltage IGBT VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V


    Original     		PDF IXGF25N300 338B2 IGBT 1500v 50A IGBT 1500v 25A

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT VCES = 2500V IC25 = 30A VCE sat ≤ 2.9V IXGF25N250 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V


    Original     		PDF IXGF25N250 IC110 25N250 5P-P528 4-21-08-E

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES


    Original     		PDF IXGF20N250 20N250 7-12-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage IGBT IXGF36N300 VCES = 3000V = 36A IC25 VCE sat ≤ 2.7V For Capacitor Discharge Apllications ( Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VGES Continuous


    Original     		PDF IXGF36N300 IC110 36N300 8-21-08-B

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT VCES = 3000V IC25 = 27A VCE sat ≤ 3.0V IXGF25N300 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES


    Original     		PDF IXGF25N300 338B2

    IXGF20N250

    Abstract: 20N25
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES


    Original     		PDF IXGF20N250 Ts140 20N250 4P-P528 2-04-09-A IXGF20N250 20N25

    25N250

    Abstract: ixgf25n250 IC tl 072 G25N g25n250 TF230
    Text: High Voltage IGBT IXGF25N250 VCES = 2500V = 30A IC25 VCE sat ≤ 2.9V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGF25N250 IC110 25N250 5P-P528 4-21-08-E ixgf25n250 IC tl 072 G25N g25n250 TF230

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT VCES = 4000V IC25 = 30A VCE sat ≤ 3.1V IXGF30N400 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 4000 V VGES Continuous ± 20 V VGEM Transient


    Original     		PDF IXGF30N400 IC110 30N400 11-23-09-C

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT VCES = 3000V IC25 = 36A VCE sat ≤ 2.7V IXGF36N300 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V


    Original     		PDF IXGF36N300 IC110 36N300 11-23-09-D

    IXGF36N300

    Abstract: 36N30 Application note for IXGF36N300 igbt 1500V 36N300
    Text: High Voltage IGBT IXGF36N300 VCES = 3000V = 36A IC25 VCE sat ≤ 2.7V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VGES Continuous ± 20 V VGEM Transient


    Original     		PDF IXGF36N300 IC110 36N300 8-27-08-C IXGF36N300 36N30 Application note for IXGF36N300 igbt 1500V

    IXGF30N400

    Abstract: 30n40 30N400 pulser
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGF30N400 VCES = 4000V = 30A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 4000 V VGES Continuous ± 20 V VGEM Transient ± 30 V


    Original     		PDF IXGF30N400 IC110 30N400 05-20-08-B IXGF30N400 30n40 30N400 pulser

    ixgf

    Abstract: IXGF25N250
    Text: Preliminary Technical Information IXGF25N250 High Voltage IGBT VCES = 2500 V IC25 = 30 A VCE sat ≤ 2.9 V For Capacitor Discharge Applications (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGF25N250 IC110 25N250 5P-P528) 04-27-07-D ixgf IXGF25N250

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGF25N250 VCES = 2500V = 30A IC25 VCE sat ≤ 2.9V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM (IXGF) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGF25N250 IC110 25N250 5P-P528 4-21-08-E

    30n400

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage IGBT IXGF30N400 VCES = 4000V = 30A IC25 VCE sat ≤ 3.1V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM (IXGF) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXGF30N400 IC110 50/60Hz, 30N400 30n400

    IXGF36N300

    Abstract: igbt 1500v 36n300 36N30
    Text: High Voltage IGBT IXGF36N300 VCES = 3000V = 36A IC25 VCE sat ≤ 2.7V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V


    Original     		PDF IXGF36N300 IC110 36N300 11-23-09-D IXGF36N300 igbt 1500v 36N30

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT VCES = 3000V IC25 = 22A VCE sat ≤ 3.2V IXGF20N300 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES


    Original     		PDF IXGF20N300 20N250 4P-P528 11-18-09-B

    IGBT 1500v 50A

    Abstract: IC tl 072 ixgf IXGF25N300 IGBT 1500V .50A pf98 338B2
    Text: High Voltage IGBT IXGF25N300 VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES


    Original     		PDF IXGF25N300 338B2 IGBT 1500v 50A IC tl 072 ixgf IXGF25N300 IGBT 1500V .50A pf98 338B2

    IXGF32N170

    Abstract: UPS SIEMENS 32N170 32N17
    Text: High Voltage IGBT IXGF32N170 VCES IC110 VCE sat tfi(typ) ( Electrically Isolated Tab) = = ≤ = 1700V 19A 3.5V 250ns ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25


    Original     		PDF IXGF32N170 IC110 250ns 32N170 0-08-A IXGF32N170 UPS SIEMENS 32N170 32N17

    ixgf

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGF32N170 VCES IC25 VCE sat tfi(typ) ( Electrically Isolated Tab) = = ≤ = 1700V 50A 3.5V 250ns ISOPLUS i4-PakTM (IXGF) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VGES Continuous ± 20 V VGEM Transient ± 30


    Original     		PDF IXGF32N170 250ns IC110 50/60Hz, 32N170 0-08-A ixgf

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGF20N300 VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES


    Original     		PDF IXGF20N300 20N250 4P-P528 11-18-09-B

    IGBT 1500v 50A

    Abstract: IC tl 072 igbt 1500V
    Text: High Voltage IGBT IXGF25N300 VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES


    Original     		PDF IXGF25N300 338B2 IGBT 1500v 50A IC tl 072 igbt 1500V

    IXGF20N250

    Abstract: No abstract text available
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGF20N250 20N250 IXGF20N250