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    IXGF25N250 Search Results

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    IXGF25N250 Price and Stock

    IXYS Corporation IXGF25N250

    IGBT 2500V 30A 114W I4-PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGF25N250 Tube 300
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    • 1000 $89.01063
    • 10000 $89.01063
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    Mouser Electronics IXGF25N250
    • 1 -
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    • 1000 $98.82
    • 10000 $98.82
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    Future Electronics IXGF25N250 Tube 35 Weeks 300
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    • 100 $87.27
    • 1000 $87.27
    • 10000 $87.27
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    TTI IXGF25N250 Tube 300
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    • 1000 $118.68
    • 10000 $118.68
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    Littelfuse Inc IXGF25N250

    Discigbt Npt-Very Hi Voltage I4-Pak Iso+/ Tube |Littelfuse IXGF25N250
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    Newark IXGF25N250 Bulk 300
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    • 100 $93.29
    • 1000 $93.29
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    IXYS Integrated Circuits Division IXGF25N250

    IGBT DIS.SINGLE 15A 2500V H.VOLTAGE ISOPLUSI4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXGF25N250
    • 1 $148.8966
    • 10 $148.8966
    • 100 $141.8063
    • 1000 $141.8063
    • 10000 $141.8063
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    IXGF25N250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGF25N250 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 30A 114W I4-PAK Original PDF

    IXGF25N250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT VCES = 2500V IC25 = 30A VCE sat ≤ 2.9V IXGF25N250 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V


    Original     		PDF IXGF25N250 IC110 25N250 5P-P528 4-21-08-E

    25N250

    Abstract: ixgf25n250 IC tl 072 G25N g25n250 TF230
    Text: High Voltage IGBT IXGF25N250 VCES = 2500V = 30A IC25 VCE sat ≤ 2.9V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGF25N250 IC110 25N250 5P-P528 4-21-08-E ixgf25n250 IC tl 072 G25N g25n250 TF230

    ixgf

    Abstract: IXGF25N250
    Text: Preliminary Technical Information IXGF25N250 High Voltage IGBT VCES = 2500 V IC25 = 30 A VCE sat ≤ 2.9 V For Capacitor Discharge Applications (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGF25N250 IC110 25N250 5P-P528) 04-27-07-D ixgf IXGF25N250

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGF25N250 VCES = 2500V = 30A IC25 VCE sat ≤ 2.9V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM (IXGF) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGF25N250 IC110 25N250 5P-P528 4-21-08-E

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250