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    smd DIODE 3FS

    Abstract: IXGH40N30BD 40N30
    Text: □ IXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S V CES ^C25 V C E sat 300 V 60 A 2.4 V 75 ns Preliminary data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20


    OCR Scan     		PDF IXGH40N30BD1 IXGH40N30BD1S 13/10Nm/lb O-247 Cha55 smd DIODE 3FS IXGH40N30BD 40N30

    40N30BD1

    Abstract: No abstract text available
    Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o


    OCR Scan     		PDF IXGH40N30BD1 IXGH40N30BD1S O-247SMD 40N30BD1S) O-247 360VTj 40N30BD1