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    IXGN75N50 Search Results

    IXGN75N50 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGN75N50 IXYS Power MOSIGBTs Scan PDF

    IXGN75N50 Datasheets Context Search

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    TO210AC

    Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60
    Text: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C


    OCR Scan     		PDF IXGN75N100 IXGN75N90 IXGN75N80 IXGN75N60 IXGN75N50 IXGM25N100A IXGM20N100A IXGM10N100A IXGM25N90A IXGM20N90A TO210AC TO-210AC TO-238 IXGM40N50 IXGM40N50A IXGM30N60

    DIN 46249 TERMINALS

    Abstract: ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4
    Text: I X Y S CORP IS E D 4ti8b25fcj O O O O S S O T ]\/[OSBLOC MODULES The MOSBLOC family of isolated modules are designed for high power industrial and commercial applica­ tions requiring improved ruggedness and efficiency. They are available with either IXYS* advanced MOSIGBTs


    OCR Scan     		PDF 4ti8b25fcj DIN 46249 TERMINALS ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4

    IXGH30N50A

    Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
    Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono­ lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses


    OCR Scan     		PDF 4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60