IXGN80N60A2D1 Search Results

IXGN80N60A2D1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGN80N60A2D1		IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 160A FRD SOT-227B		Original	PDF

IXGN80N60A2D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXGN80n60 Abstract: IF110 high current igbt SOT227B IXGN80N60A2 123B16 Text: Advanced Technical Data IXGN 80N60A2 IXGN 80N60A2D1 IGBT Optimized for Switching up to 5 kHz E Symbol Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	80N60A2 80N60A2D1 IC110 IF110 OT-227B, E153432 IXGN80N60A2D1 065B1 728B1 123B1 IXGN80n60 IF110 high current igbt SOT227B IXGN80N60A2 123B16	PDF

Catalog Datasheet

MFG & Type

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IXGN80n60

Abstract: IF110 high current igbt SOT227B IXGN80N60A2 123B16
Text: Advanced Technical Data IXGN 80N60A2 IXGN 80N60A2D1 IGBT Optimized for Switching up to 5 kHz E Symbol Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

Original

80N60A2 80N60A2D1 IC110 IF110 OT-227B, E153432 IXGN80N60A2D1 065B1 728B1 123B1 IXGN80n60 IF110 high current igbt SOT227B IXGN80N60A2 123B16

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