G60N60
Abstract: G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2
Text: Preliminary Technical Information HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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IXGR60N60C2C1
IC110
IF110
60N60C2C1
2-17-08-A
G60N60
G60N
IF110
ISOPLUS247
C9045
IXGR60N60C2C1
g60n60c2
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G60N60
Abstract: 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2
Text: IXGR60N60C2C1 HiperFASTTM IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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PDF
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IXGR60N60C2C1
IC110
247TM
IF110
60N60C2C1
2-17-08-A
G60N60
60N60C2
IF110
ISOPLUS247
g60n60c2c1
IXGR60N60C2C1
siemens sic
g60n60c2
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Untitled
Abstract: No abstract text available
Text: HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
IXGR60N60C2C1
IC110
247TM
IF110
60N60C2C1
2-17-08-A
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