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    Abstract: No abstract text available
    Text: GenX3TM 1400V IGBTs w/ Diode IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES


    Original     		IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 IC110 O-247 IF110 28N140B3H1 11-29-10-B PDF

    4525 GE

    Abstract: IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1
    Text: Preliminary Technical Information IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 High Voltage Co-Pack IGBT VCES = 1400 V IC25 = 60 A VCE sat ≤ 3.6 V Avalanche Rated Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 IC110 IF110 4525 GE IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1 PDF

    IXGK28N140B3H1

    Abstract: IXGX28N140B3H1 IXGH28N140B3H1 28n140b3h1 IXGK28N140
    Text: IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 GenX3TM 1400V IGBTs w/ Diode Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES


    Original     		IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 IC110 O-247 IC110 IF110 PLUS247 O-264 Indu60V IXGK28N140B3H1 28n140b3h1 IXGK28N140 PDF