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IXYS Corporation IXSK35N120AU1 IGBT 1200V 70A 300W TO264
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IXSK35N120AU1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXSK35N120AU1		IXYS	1200V high voltage IGBT with diode		Original	PDF

IXSK35N120AU1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXSK35N120AU1 Abstract: IC tl 072 35N120AU1 Text: Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	IXSK35N120AU1 IC tl 072 35N120AU1	PDF
D96001DE Abstract: No abstract text available Text: High Voltage IGBT with Diode IXSK35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	IXSK35N120AU1 O-264 35N120AU1 35N120A D96001DE, D96001DE	PDF
IXSK35N120AU1 Abstract: 35N120AU1 IC tl 072 35N120A QG150 Text: High Voltage IGBT with Diode IXSK35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	IXSK35N120AU1 35N120AU1 35N120A D96001DE, IC tl 072 QG150	PDF
Untitled Abstract: No abstract text available Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C	OCR Scan	IXSK35N120AU1 O-26re IXSK35N120AU1	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode IXSK35N120AU1 V, CES IC25 v CE sat 1200 V 70 A 4V Short Circuit SOA Capability Preliminary data Symbol Test Conditions VCES VCGR v GES v GEM T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; R GE = 1 MQ 1200 V Maximum Ratings	OCR Scan	IXSK35N120AU1 O-264 35N120AU1	PDF
35N120AU Abstract: No abstract text available Text: IXSK35N120AU1 High Voltage IGBT with Diode VCES IC25 = 1200 V = 70 A V CE sat = 4 V Combi Pack Short Circuit SOA Capability Preliminary data Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 1200 V V CGR T,J = 25°C to 150°C; Rü„t = 1	OCR Scan	IXSK35N120AU1 O-264 35N120AU1 35N120A D94007DE, 35N120AU	PDF
Untitled Abstract: No abstract text available Text: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25	OCR Scan	35N120AU1 to150 O-264AA JEDECTO-264AA 35N120AU1	PDF
diode u2 40 Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60 Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style ► N eiV ISOPLUS247™ (R) Case style	OCR Scan	O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60	PDF
30n50 mosfet Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600	OCR Scan	O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel	PDF