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    IXTA160N075T Search Results

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    IXTA160N075T Price and Stock

    Littelfuse Inc IXTA160N075T

    MOSFET N-CH 75V 160A TO263
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    DigiKey IXTA160N075T Tube
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    Newark IXTA160N075T Bulk 300
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    • 1000 $1.96
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    Littelfuse Inc IXTA160N075T7

    MOSFET N-CH 75V 160A TO263-7
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    Newark IXTA160N075T7 Bulk 300
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    IXYS Corporation IXTA160N075T

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    Future Electronics IXTA160N075T Tube 50
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    TTI IXTA160N075T Tube 300
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    IXYS Corporation IXTA160N075T7

    MOSFETs 160 Amps 75V 5.5 Rds
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    TTI IXTA160N075T7 Tube 300
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    IXYS Integrated Circuits Division IXTA160N075T

    MOSFET DIS.160A 75V N-CH TO263(D2PAK) TRENCHMV SMT
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    Ozdisan Elektronik IXTA160N075T
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    IXTA160N075T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA160N075T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-263 Original PDF
    IXTA160N075T7 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-263-7 Original PDF

    IXTA160N075T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTP160N075T

    Abstract: IXTA160N075T 160N075 160N075T 175C 25a64
    Text: Preliminary Technical Information IXTA160N075T IXTP160N075T TrenchMVTM Power MOSFET = 75 V = 160 A Ω ≤ 6.0 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA160N075T IXTP160N075T O-263 160N075T_ IXTP160N075T IXTA160N075T 160N075 160N075T 175C 25a64

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T VDSS ID25 = 75 V = 160 A Ω ≤ 6.0 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA160N075T IXTP160N075T 160N075T_

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA160N075T7 RDS on = 75 V = 160 A ≤ 6.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTA160N075T7 O-263 160N075T

    160N075T

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T7 VDSS ID25 RDS on = 75 V = 160 A ≤ 6.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTA160N075T7 O-263 160N075T 160N075T

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T