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IXTB62N50L Price and Stock

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Littelfuse Inc IXTB62N50L MOSFET N-CH 500V 62A PLUS264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTB62N50L	Tube	195		1	1 $57.97 10 $57.97 100 $42.7504 1000 $42.7504 10000 $42.7504	Buy Now
Newark	IXTB62N50L	Bulk			300	1 - 10 - 100 $44.81 1000 $44.81 10000 $44.81	Buy Now
IXYS Corporation IXTB62N50L MOSFETs 62 Amps 500V 0.1 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTB62N50L					1 $56.23 10 $54.4 100 $42.75 1000 $42.75 10000 $42.75	Get Quote
Future Electronics	IXTB62N50L	Tube			300	1 $43.99 10 $43.4 100 $41.9 1000 $41.9 10000 $41.9	Buy Now
TTI	IXTB62N50L	Tube	25		25	1 - 10 - 100 $42.76 1000 $42.76 10000 $42.76	Buy Now
TME	IXTB62N50L		11		1	1 $64.85 10 $51.54 100 $48.01 1000 $48.01 10000 $48.01	Buy Now

IXTB62N50L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTB62N50L		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 62A PLUS264		Original	PDF

IXTB62N50L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 IXTB62N50L RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTB62N50L PLUS264TM 62N50L 11-04-11-B	PDF
62N50L Abstract: IXTB62N50L Text: Preliminary Technical Information Linear Power MOSFET IXTB62N50L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous	Original	IXTB62N50L 264TM 62N50L 5-07-A 62N50L IXTB62N50L	PDF
IXTB62N50L Abstract: No abstract text available Text: LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTB62N50L PLUS264TM 62N50L 11-04-11-B IXTB62N50L	PDF
IXAN0068 Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability	Original	IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L	PDF