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    Abstract: No abstract text available
    Text: I X Y S CORP 1ÖE ] 4tat2afci H QQ0Qb3S fi □ I X Y S IXTE25N20X4 MAXIMUM RATINGS PER DEVICE) Parameter Drain-Source Voltage (1) Drain-Gate Voltage (Rq s = I.O M O ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc = 25°C)


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    f g megamos

    Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
    Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


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    f g megamos

    Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
    Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		PDF fit55t Q000563 f g megamos megamos 13 megamos IXGE75N100Z ID 48 Megamos