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    IXTH10N100D2 Search Results

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    IXTH10N100D2 Price and Stock

    Littelfuse Inc IXTH10N100D2

    MOSFET N-CH 1000V 10A TO247
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    DigiKey IXTH10N100D2 Tube 730 1
    • 1 $18.5
    • 10 $18.5
    • 100 $12.21967
    • 1000 $18.5
    • 10000 $18.5
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    Verical IXTH10N100D2 120 30
    • 1 -
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    • 100 $11.9246
    • 1000 $11.9246
    • 10000 $11.9246
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    Arrow Electronics IXTH10N100D2 120 57 Weeks 30
    • 1 -
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    • 100 $11.9246
    • 1000 $11.9246
    • 10000 $11.9246
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    Newark IXTH10N100D2 Bulk 520 1
    • 1 $18.13
    • 10 $15.05
    • 100 $11.97
    • 1000 $11.71
    • 10000 $11.71
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    IXYS Corporation IXTH10N100D2

    MOSFETs TO247 1KV 10A N-CH DEPL
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    Mouser Electronics IXTH10N100D2 434
    • 1 $17.97
    • 10 $16.89
    • 100 $12.21
    • 1000 $11.94
    • 10000 $11.94
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    Future Electronics IXTH10N100D2 Tube 29 Weeks 30
    • 1 -
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    • 100 $11.67
    • 1000 $11.67
    • 10000 $11.67
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    TTI IXTH10N100D2 Tube 300
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    • 1000 $12.1
    • 10000 $12.1
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    TME IXTH10N100D2 1
    • 1 $18.33
    • 10 $15.05
    • 100 $14.56
    • 1000 $13.36
    • 10000 $13.36
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    New Advantage Corporation IXTH10N100D2 119 1
    • 1 -
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    • 100 $30.39
    • 1000 $28.36
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    IXYS Integrated Circuits Division IXTH10N100D2

    MOSFET DIS.10A 1000V N-CH TO-247AD DEPLETION MODE
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    Ozdisan Elektronik IXTH10N100D2 119
    • 1 $22.13445
    • 10 $22.13445
    • 100 $20.6864
    • 1000 $20.6864
    • 10000 $20.6864
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    IXTH10N100D2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH10N100D2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10A TO-247 Original PDF

    IXTH10N100D2 Datasheets Context Search

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    IXTH10N100D2

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH10N100D2 IXTT10N100D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH10N100D2 IXTT10N100D2 O-247 O-268 O-247) O-247 100ms 100ms 10N100D2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Depletion Mode MOSFETs VDSX ID on IXTH10N100D2 IXTT10N100D2 RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH10N100D2 IXTT10N100D2 O-247 O-247) O-268 100ms 10N100D2