Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTH160N15T Search Results

    SF Impression Pixel

    IXTH160N15T Price and Stock

    Littelfuse Inc IXTH160N15T

    MOSFET N-CH 150V 160A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH160N15T Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.816
    • 10000 $5.816
    		Buy Now
    Newark IXTH160N15T Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.1
    • 10000 $6.1
    		Buy Now

    IXYS Corporation IXTH160N15T

    MOSFETs 160Amps 150V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH160N15T
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.52
    • 10000 $7.52
    		Get Quote
    Future Electronics IXTH160N15T Tube 30
    • 1 -
    • 10 -
    • 100 $6.82
    • 1000 $6.82
    • 10000 $6.82
    		Buy Now
    TTI IXTH160N15T Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.04
    • 10000 $6.04
    		Buy Now
    New Advantage Corporation IXTH160N15T 24 1
    • 1 -
    • 10 -
    • 100 $14.79
    • 1000 $14.79
    • 10000 $14.79
    		Buy Now

    IXTH160N15T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH160N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 160A TO-247 Original PDF

    IXTH160N15T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTH160N15T

    Abstract: 160n15t
    Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH160N15T VDSS ID25 RDS on = 150 V = 160 A Ω ≤ 9.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1MΩ


    Original     		PDF IXTH160N15T 160N15T IXTH160N15T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH160N15T VDSS ID25 RDS on = 150 V = 160 A Ω ≤ 9.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; R VGSM Maximum Ratings


    Original     		PDF IXTH160N15T O-247 160N15T

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250