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    IXTH2R4N120P Price and Stock

    Littelfuse Inc IXTH2R4N120P

    MOSFET N-CH 1200V 2.4A TO247
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    DigiKey IXTH2R4N120P Tube 300
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    Newark IXTH2R4N120P Bulk 300
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    IXYS Corporation IXTH2R4N120P

    MOSFETs 2.4 Amps 1200V
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    Mouser Electronics IXTH2R4N120P
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    Future Electronics IXTH2R4N120P Tube 300
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    TTI IXTH2R4N120P Tube 300
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    TME IXTH2R4N120P 1
    • 1 $8.08
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    New Advantage Corporation IXTH2R4N120P 120 1
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    IXTH2R4N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH2R4N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 2.4A TO-247 Original PDF

    IXTH2R4N120P Datasheets Context Search

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    2R4N120P

    Abstract: IXTA2R4N120P IXTH2R4N120P
    Text: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A IXTA2R4N120P IXTH2R4N120P

    Untitled

    Abstract: No abstract text available
    Text: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A Ω ≤ 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ Ω 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 2R4N120P