IXTH35N30 Search Results

IXTH35N30 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTH35N30		IXYS	300V HiPerFET power MOSFET		Original	PDF
IXTH35N30		IXYS	MegaMOS Power MOSFETs		Scan	PDF
IXTH35N30		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

IXTH35N30 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MOSFET 11N80 Data sheet Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640 Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250	Original	O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640	PDF
IXTH35N30 Abstract: IXTH40N30 IXTM40N30 Text: MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 VDSS ID25 RDS on 300 V 300 V 300 V 35 A 40 A 40 A 0.10 Ω 0.085 Ω 0.088 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	35N30 40N30 O-247 O-204 IXTH35N30 IXTH40N30 IXTM40N30	PDF
35N25 Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25 Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b \| DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous	OCR Scan	IXTH35N25 IXTH35N30 IXTM35N25 IXTM35N30 35N25 35N30 800v mosfet megamos 46 08 09 6	PDF
ID 48 Megamos Abstract: 35N25 IXTM35N25 ixtm35n30 Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b \| 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous	OCR Scan	IXTH35N25 IXTM35N25 IXTH35N30 IXTM35N30 O-204 O-247 IXTH350 ID 48 Megamos 35N25	PDF
IXTH35N30 Abstract: No abstract text available Text: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2	OCR Scan	35N30 40N30 to150 O-247 T0-204 IXTH35N30	PDF
1XTH5N100 Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50 Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out line No mm mils IXTD67N10 IXTD75N10	OCR Scan	IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50	PDF
megamos Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4	OCR Scan	O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95	PDF