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    IXTM75N10 Search Results

    IXTM75N10 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTM75N10 IXYS MegaMOS FET Original PDF
    IXTM75N10 IXYS MegaMOSFET - N-Channel Enhancement Mode Original PDF
    IXTM75N10 IXYS MegaMOS Power MOSFETs Scan PDF
    IXTM75N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTM75N100 IXYS 1000V HiPerFET power MOSFET Original PDF

    IXTM75N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100 N 37

    Abstract: IXTM75N10 SHD239601
    Text: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 100 75 50 300 0.025 @ 37.5 0.27


    Original     		PDF IXTM75N10 SHD239601 100 N 37 IXTM75N10 SHD239601

    SHD239608

    Abstract: shd239606
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM


    Original     		PDF O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606

    IXTM75N10

    Abstract: SHD225601
    Text: SENSITRON SEMICONDUCTOR SHD225601 TECHNICAL DATA DATA SHEET 909, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 75A, 0.02 Ohm, MOSFET œ Isolated Hermetic Metal Package œ Fast intrinsic Rectifier œ Low RDS on œ Low package inductance-easy to drive and protect


    Original     		PDF SHD225601 IXTM75N10 250mA IXTM75N10 SHD225601

    IXFM50N20

    Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413
    Text: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60


    Original     		PDF SHD218413 SHD2181 SHD2182 SHD2183 SHD2184 SHD2185 SHD2186 SHD2187 SHD2188 SHD218413A IXFM50N20 IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD225601 TECHNICAL DATA DATA SHEET 909, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 75A, 0.02 Ohm, MOSFET œ Isolated Hermetic Metal Package œ Fast intrinsic Rectifier œ Low RDS on œ Low package inductance-easy to drive and protect


    Original     		PDF SHD225601 IXTM75N10 SHD225601 O-254

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD225601 TECHNICAL DATA DATA SHEET 909, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 75A, 0.02 Ohm, MOSFET Isolated Hermetic Metal Package Fast intrinsic Rectifier Low RDS on Low package inductance-easy to drive and protect


    Original     		PDF SHD225601 IXTM75N10

    75n08

    Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
    Text: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)


    OCR Scan     		PDF IXTH75N08 IXTH75N10 IXTM75N08 IXTM75N10 IXTH75N10, IXTM75N10, 0-100V, O-247 75n08 megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		PDF O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan     		PDF O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95

    IXYS DS 145

    Abstract: No abstract text available
    Text: PIXYS_ MegaMOS FET IXTH/IXTM 67N10 IXTH / IXTM 75N10 p v DSS ^D25 100 V 100 V 67 A 75 A DS on 25 mi] 20 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj =25°C to150°C 100 V VDQB T j = 25° C to 150° C; RGS= 1 M il 100 V VGS


    OCR Scan     		PDF 67N10 75N10 to150 75N10 O-247 T0-204 O-204 IXYS DS 145

    *2393n

    Abstract: D2199 IRF9140 2184b d2186 2188a d2188
    Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC POWER MOSFETs N -C H A N N E L . T O -2 5 4 . T O -2 5 7 TYPE NUM BER DRAIN TO SO URCE BREAKDO W N VOLTAGE CO NTINUO US DRAIN CURRENT M AXIM UM POWER DISSIPATION •d PD V (BR)DSS STATIC


    OCR Scan     		PDF SHD2261 SHD2262 SHD2263 SHD2264 SHD2265 SHD2266 SHD2268 IRFY044 *2393n D2199 IRF9140 2184b d2186 2188a d2188