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    IXTP26P20P Search Results

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    IXTP26P20P Price and Stock

    Littelfuse Inc IXTP26P20P

    MOSFET P-CH 200V 26A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP26P20P Tube 1,373 1
    • 1 $7.04
    • 10 $7.04
    • 100 $7.04
    • 1000 $3.53624
    • 10000 $3.53624
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    IXYS Corporation IXTP26P20P

    MOSFETs -26.0 Amps -200V 0.170 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP26P20P 7,137
    • 1 $6.8
    • 10 $5.83
    • 100 $3.7
    • 1000 $3.53
    • 10000 $3.53
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    Newark IXTP26P20P Bulk 8 1
    • 1 $7.07
    • 10 $6.59
    • 100 $5.05
    • 1000 $4.46
    • 10000 $4.46
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    Future Electronics IXTP26P20P Tube 40 Weeks 300
    • 1 -
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    • 100 $3.77
    • 1000 $3.47
    • 10000 $3.47
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    Bristol Electronics IXTP26P20P 50
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    Quest Components IXTP26P20P 40
    • 1 $8.6748
    • 10 $6.3615
    • 100 $5.7832
    • 1000 $5.7832
    • 10000 $5.7832
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    TTI IXTP26P20P Tube 400 50
    • 1 -
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    • 100 $3.69
    • 1000 $3.54
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    TME IXTP26P20P 124 1
    • 1 $6.31
    • 10 $6.31
    • 100 $4.42
    • 1000 $3.85
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    New Advantage Corporation IXTP26P20P 473 1
    • 1 -
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    • 100 $8.2
    • 1000 $7.65
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    IXTP26P20P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP26P20P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 26A TO-220 Original PDF

    IXTP26P20P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    26P20

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFETs IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) G D (Tab) G D DS D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P O-263 O-220AB IXTA26P20P IXTQ26P20P 26P20

    Untitled

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET VDSS ID25 P-Channel Enhancement Mode Avalanche Rated IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-263 IXTA TO-220 (IXTP) TO-3P (IXTQ) G RDS(on) G D (TAB) D S - 200V - 26A Ω 170mΩ G D S S D (TAB) = = ≤ D (TAB) Symbol Test Conditions


    Original     		PDF IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P O-263 O-220 /ns01 IXTA26P20P IXTQ26P20P

    26P20P

    Abstract: IXTQ26P20P 26P20 IXTA26P20P IXTH26P20P
    Text: PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-263 IXTA TO-220 (IXTP) G VDSS ID25 RDS(on) G G D S D (TAB) D S D (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200


    Original     		PDF IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P O-263 O-220 IXTA26P20P IXTQ26P20P 26P20P 26P20 IXTH26P20P

    26P20P

    Abstract: IXTQ26P20P IXTP26P20P IXTA26P20P 3-26-08-B 26P20
    Text: PolarPTM Power MOSFET IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P P-Channel Enhancement Mode Avalanche Rated G G D TAB D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous


    Original     		PDF IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P O-247 O-220 O-263 100ms IXTA26P20P 26P20P IXTQ26P20P IXTP26P20P 3-26-08-B 26P20

    to-247 to-220 to-3p

    Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
    Text: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective


    Original     		PDF -100V -500V IXTA52P10P FQB34P10 IXTA52P10P -100V, O-263 to-247 to-220 to-3p IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    p-CHANNEL POWER MOSFET 600v

    Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
    Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take


    Original     		PDF -600v -150V p-CHANNEL POWER MOSFET 600v IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P

    26P20P

    Abstract: IXTA26P20P transistor tl 187 100V Single p-Channel MOSFET ixta*26p20p IXTQ26P20P p-channel 200V 26P20
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 S G D TAB D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C - 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ - 200 V VGSS Continuous


    Original     		PDF O-247 O-263 IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P O-220 100ms IXTA26P20P 26P20P transistor tl 187 100V Single p-Channel MOSFET ixta*26p20p IXTQ26P20P p-channel 200V 26P20

    Untitled

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 S G D TAB D G D (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 O-263 IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P O-220 100ms IXTA26P20P