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    IXTP2R4N120P Search Results

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    IXTP2R4N120P Price and Stock

    Littelfuse Inc IXTP2R4N120P

    MOSFET N-CH 1200V 2.4A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP2R4N120P Tube 4 1
    • 1 $6.74
    • 10 $6.74
    • 100 $6.74
    • 1000 $3.35
    • 10000 $3.35
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    Newark IXTP2R4N120P Bulk 300
    • 1 -
    • 10 -
    • 100 $4.77
    • 1000 $3.84
    • 10000 $3.57
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    IXYS Corporation IXTP2R4N120P

    MOSFETs 2.4 Amps 1200V 7.5 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP2R4N120P 229
    • 1 $6.44
    • 10 $5.52
    • 100 $4.6
    • 1000 $3.65
    • 10000 $3.65
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    Future Electronics IXTP2R4N120P Tube 24 Weeks 50
    • 1 -
    • 10 -
    • 100 $3.93
    • 1000 $3.93
    • 10000 $3.93
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    TTI IXTP2R4N120P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.42
    • 10000 $3.42
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    TME IXTP2R4N120P 317 1
    • 1 $5.22
    • 10 $4.15
    • 100 $3.87
    • 1000 $3.87
    • 10000 $3.87
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    New Advantage Corporation IXTP2R4N120P 207 1
    • 1 -
    • 10 -
    • 100 $7.77
    • 1000 $7.25
    • 10000 $7.25
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    IXTP2R4N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP2R4N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 2.4A TO-220 Original PDF

    IXTP2R4N120P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2R4N120P

    Abstract: IXTA2R4N120P IXTH2R4N120P
    Text: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A IXTA2R4N120P IXTH2R4N120P

    Untitled

    Abstract: No abstract text available
    Text: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A Ω ≤ 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ Ω 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 2R4N120P

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250