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    IXYH30N120C3 Search Results

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    IXYH30N120C3 Price and Stock

    IXYS Corporation IXYH30N120C3D1

    IGBT 1200V 66A TO-247
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    DigiKey IXYH30N120C3D1 Tube 503 1
    • 1 $8.38
    • 10 $8.38
    • 100 $5.864
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    Mouser Electronics IXYH30N120C3D1 167
    • 1 $8.38
    • 10 $8.38
    • 100 $5.86
    • 1000 $5.86
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    TTI IXYH30N120C3D1 Tube 300
    • 1 -
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    • 1000 $7.82
    • 10000 $7.82
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    IXYS Corporation IXYH30N120C3

    IGBT 1200V 75A TO-247
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    DigiKey IXYH30N120C3 Tube 1
    • 1 $7.9
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    • 100 $4.89833
    • 1000 $4.09763
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    Mouser Electronics IXYH30N120C3 3
    • 1 $8.06
    • 10 $7.9
    • 100 $5.57
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    Future Electronics IXYH30N120C3 Tube 300
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    IXYH30N120C3 Tube 300
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    TTI IXYH30N120C3 Tube 300
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    • 1000 $5.57
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    TME IXYH30N120C3 1
    • 1 $9.5
    • 10 $7.93
    • 100 $7.13
    • 1000 $7.13
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    Littelfuse Inc IXYH30N120C3

    Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXYH30N120C3
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    Newark IXYH30N120C3 Bulk 300
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    • 1000 $4.3
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    Littelfuse Inc IXYH30N120C3D1

    Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXYH30N120C3D1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXYH30N120C3D1 Bulk 300
    • 1 -
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    • 1000 $6.15
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    IXYH30N120C3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXYH30N120C3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 75A 500W TO247 Original PDF
    IXYH30N120C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 66A 416W TO247 Original PDF

    IXYH30N120C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP30N120C3 IXYH30N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXYP30N120C3 IXYH30N120C3 O-220 30N120C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXYP30N120C3 IXYH30N120C3 IC110 O-220 O-247 30N120C3 4N-C91) PDF

    IXYH30N120C3D1

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXYH30N120C3D1 IC110 O-247 IF110 062in. IXYH30N120C3D1 PDF

    IXYP30N120C3

    Abstract: No abstract text available
    Text: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYP30N120C3 IXYH30N120C3 IC110 O-220 062in. O-220 O-247 30N120C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXYH30N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M


    Original     		IXYH30N120C3D1 IC110 O-247 IF110 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXYH30N120C3D1 O-247 IF110 PDF

    12v 30a smps

    Abstract: No abstract text available
    Text: IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH30N120C3D1 IC110 O-247 IF110 062in. 12v 30a smps PDF

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF