IXDD414CI
Abstract: VM0580
Text: PRELIMINARY DATA SHEET IXDD414PI IXDD414YI IXDD414CI Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak
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IXDD414PI
IXDD414YI
IXDD414CI
IXDD414
IXDD414CI
VM0580
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cmos 4000 series
Abstract: fully protected p channel mosfet high speed mosfet driver
Text: IXDD408PI IXDD408YI AD VANCE TECHNICAL INFORMA TION ADV INFORMATION Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch Up Protected • High Peak Output Current: 8A Peak
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IXDD408PI
IXDD408YI
5000pF
IXDD408
IXDD408YI
408PI
cmos 4000 series
fully protected p channel mosfet
high speed mosfet driver
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cmos 4000 series
Abstract: IXDD414YI IXDD414PI
Text: IXDD414PI IXDD414YI AD VANCE TECHNICAL INFORMA TION ADV INFORMATION Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch-Up Protected • High Peak Output Current: 14A Peak
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IXDD414PI
IXDD414YI
IXDD414
IXDD414YI
414PI
414YI
cmos 4000 series
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IXDD404SI
Abstract: No abstract text available
Text: IXDD404PI IXDD404SI PRELIMINAR YD ATA SHEET PRELIMINARY DA 4 Amp, Dual Ultrafast MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch-Up Protected • High Peak Output Current: 4A Peak
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IXDD404PI
IXDD404SI
2500pF
IXDD404
IXDD404SI
404PI
404SI
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IXTH20N50D
Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
Text: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.
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IXI858/IXI859
00V/1000V
O-247
O-268
O-251AA
IXTH20N50D
IXTP01N100D
IXTP02N50D
IXTY02N50D
IXTY01N100D
depletion mode mosfet
IXTT10N100D
IXTH10N100D
IXTT20N50D
IXTU01N100D
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13.56MHZ 3KW GENERATOR
Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A
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56MHz
56MHz,
DE375-102N12A
DEIC420
DE375-102N12A
0-471-03018-X
13.56MHZ 3KW GENERATOR
3KW GENERATOR
mosfet 5kw high power rf
5kw switching power supply design
HIGH FREQUENCY 5kw power Transformer
circuit diagram of 13.56MHz RF Generator
mosfet 3kw
3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS
3kw mosfet
equivalent circuit of power transformer 11kv
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information V.DSS IXFH 20N60Q IXFT 20N60Q HiPerFET Power MOSFETs = D25 Q Class DS on = 600 V 20 A 0.35 Q trr < 250ns N-Channel Enhancement Mode Avalanche Rated High dv/dt Gate Charge and Capacitances Maximum Ratings Symbol Test C onditions
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20N60Q
250ns
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH20N80Q IXFK20N80Q IXFT20N80Q V DSS = ^D25 ” RDS on 800 V 20 A — 0.42 n t < 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt rr {&• V . os Maximum Ratings
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IXFH20N80Q
IXFK20N80Q
IXFT20N80Q
O-247
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Untitled
Abstract: No abstract text available
Text: □ IXYS HHifl JL æ* X HiPerFET Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, LowQg V^ = 200 V U = R ds ,o„, = trr < 200 ns 80 A 28m Q Preliminary data sheet Maximum Ratings Symbol TestConditions
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80N20Q
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IXFH 52N30Q IX F K 52N30Q IXFT 52N30Q HiPerFET Power MOSFETs Q -Class V,DSS ^D25 R DS on t = 300 V = 52 A = 60 mQ < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Low Gate Charge and Capacitances
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52N30Q
O-247
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D1488
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFET IXFH/IXFK/IXFT80N10 Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Test C onditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i v DGR V GS V GSM ^D25 ^DM 100 100
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IXFH/IXFK/IXFT80N10
O-247
00A/ns
O-264
13neormoreofthefollowing
O-264AA
D1488
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Untitled
Abstract: No abstract text available
Text: □ IXYS H H ifl JL æ* X HiPerFET Power MOSFETs IXFH 58N20Q IXFT 58N20Q Q-Class VDSS = '□25 = R DS on = 200 V 58 A mQ 4 0 trr < 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, LowQg Preliminary data sheet Symbol Maximum Ratings Test Conditions
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58N20Q
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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31N60D1
O-268
GES12
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IXYS DS 145
Abstract: 13N100
Text: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS
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IXFT10N100
IXFT12N100
13N100
10N100
12N100
13N100
IXYS DS 145
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q V D S S 300 40 85 < 200 = ^ D 2 5 D Q Class D S o n N-Channel Enhancement Mode Avalanche Rated Highdv/dt, LowQg t r r V A mQ ns Preliminary data Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C
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IXFH40N30Q
IXFT40N30Q
O-268
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM
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15N120C
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Untitled
Abstract: No abstract text available
Text: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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24N60CD1
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001-045
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20
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15N120B
15N120B
O-268
001-045
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L-1047
Abstract: No abstract text available
Text: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous
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IXGH30N60B
IXGT30N60B
13/10Nm/lb
O-247
O-268
L-1047
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IXGH 20N100 IXGT 20N100 IGBT Symbol Test Conditions v CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C
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15N120CD1
Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
Text: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR
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15N120BD1
15N120CD1
O-268
15N120CD1
15N120
GC smd diode
IXGT15N120BD1
smd diode Lf 047
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IXFH58N20
Abstract: No abstract text available
Text: □ IXYS HiPerFET Power MOSFETs V DSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family D DS on ^D25 42 A 60m Q 50 A 45m Q 58 A 40m Q 200 V 200 V 200 V trr < 200 ns TO-247 AD (IXFH) Maximum Ratings
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IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
O-247
IXFT58N20
IXFH50N20
IXFM50N20
IXFT50N20
IXFH58N20
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30n60b
Abstract: B2045
Text: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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30N60B
30N60C
30n60b
B2045
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Untitled
Abstract: No abstract text available
Text: □ IXYS U ltr a - L o w V . „ IG B T CE sat IX G H 31N 60 Vr„ = IX G T 31N 60 I = 60 = 1 .7 V CES C25 V rP , CE(sat) 6 0 0 V A Preliminary data sheet Symbol Test C onditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600
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O-247
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