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    IXGT30N60B Price and Stock

    IXYS Corporation IXGT30N60B2

    IGBT PT 600V 70A TO268AA
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    IXYS Corporation IXGT30N60B2D1

    IGBT PT 600V 70A TO268AA
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    New Advantage Corporation IXGT30N60B2D1 215 1
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    IXGT30N60B Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGT30N60B IXYS 600V HiPerFAST IGBT Original PDF
    IXGT30N60B2 IXYS IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT Original PDF
    IXGT30N60B2D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 70A 190W TO268 Original PDF
    IXGT30N60BD1 IXYS 600V HiPerFAST IGBT with diode Original PDF
    IXGT30N60BU1 IXYS 600V HiPerFAST IGBT with diode Original PDF
    IXGT-30N60BU1 IXYS HiPerFAST IGBT with Diode Original PDF

    IXGT30N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGH30N60B

    Abstract: IXGT30N60B
    Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms


    Original     		PDF IXGH30N60B IXGT30N60B IC110 O-247 O-268 IXGH30N60B IXGT30N60B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms


    Original     		PDF IXGH30N60B IXGT30N60B IC110 O-247 O-268 IXBH30N60BU1 O-268AA

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    14055B

    Abstract: No abstract text available
    Text: Hi PerFAST IGBT IXGH30N60B IXGT30N60B CES ^C25 VCE sat tfi = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Test Conditions Maximum Ratings V CES T j = 2 5 cC to 1 5 0 °C 600 V V CGR T ,J = 25° C to 150° C; R CaE „ = 1 MQ 600 V V GES Continuous


    OCR Scan     		PDF IXGH30N60B IXGT30N60B O-268 -247A 14055B

    L-1047

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous


    OCR Scan     		PDF IXGH30N60B IXGT30N60B 13/10Nm/lb O-247 O-268 L-1047

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT IXGH30N60B IXGT30N60B vCES ^C25 vCE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data ÒB Symbol Test Conditions VCES Tj =25°Cto150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 Mft 600 V vGES vGEM Continuous ±20 V Transient ±30


    OCR Scan     		PDF IXGH30N60B IXGT30N60B Cto150 O-247 O-268

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan     		PDF O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C