30u60
Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Text: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600
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-200A/
TB60S
TA60CS
TA60C
04E120
09E120
30u60
ixys dsei 8-06
ixys dsei
STTH 3060
MUR 8120
ixys dsei 12-12
10U60
RHRG 8120
40U60
ixys dsei 60-06
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IXYS DSEI 2X121
Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89
Text: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700
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DO-203
75-08B
75-12B
75-16B
75-18B
IXYS DSEI 2X121
IXYS DSEI 2X121-02a
2x121-02a
IXYS DSEI 2X61
DO-205
2X61-10B
110-12F
dsei 2x60
110-16F
6206 sot 89
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ixys dsei 12-10a
Abstract: 24A12 IXYS 12-10A diode 6A 1000v
Text: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5
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2-10A
O-220
ixys dsei 12-10a
24A12
IXYS 12-10A
diode 6A 1000v
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Untitled
Abstract: No abstract text available
Text: DSEI 120 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 C A Type IFAVM = 126 A VRRM = 600 V = 35 ns trr TO-247 AD C DSEI 120-06A A C A = Anode, C = Cathode Symbol Test Conditions IFRMS IFAVM ¬ IFAV IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5
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O-247
20-06A
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Untitled
Abstract: No abstract text available
Text: DSEI 12-06A IFAV = 14 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 Type A C TO-220 AC C A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM
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2-06A
O-220
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DSEI 12 06A
Abstract: IR 1206A IXYS DSEI 12-06A IXYS DSEI 2
Text: DSEI 12-06A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC C A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM
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2-06A
O-220
DSEI 12 06A
IR 1206A
IXYS DSEI 12-06A
IXYS DSEI 2
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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ixys dsei 12-12a
Abstract: 12-12A ixys dsei 120 1212a TO-220 1200V 11A DSEI IXYS ixys dsei 12 ixys dsei 12-10a
Text: DSEI 12-12A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 s Type A C TO-220 AC C A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5
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2-12A
O-220
2-10A
ixys dsei 12-12a
12-12A
ixys dsei 120
1212a
TO-220 1200V 11A
DSEI IXYS
ixys dsei 12
ixys dsei 12-10a
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Untitled
Abstract: No abstract text available
Text: DSEI 12-12A IFAV = 11 A VRRM = 1200 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type A C TO-220 AC C A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM
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2-12A
O-220
2-10A
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Untitled
Abstract: No abstract text available
Text: DSEI 12-10A IFAV = 12 A VRRM = 1000 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type A C TO-220 AC C A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM
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2-10A
O-220
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Untitled
Abstract: No abstract text available
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1200 1200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-12B DSEI 2x 31-12B DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
E72873
30-12B
31-12B
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Untitled
Abstract: No abstract text available
Text: DSEI 12-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns 1 3 Type 2/4 DSEI 12-06AS Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM
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12-06AS
20130913a
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Untitled
Abstract: No abstract text available
Text: DSEI 120 Fast Recovery Epitaxial Diode FRED VRSM V 1200 VRRM C A Type IFAVM = 109 A VRRM = 1200 V = 40 ns trr TO-247 AD V 1200 C DSEI 120-12A A C A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFAV ② IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5
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O-247
20-12A
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ixys dsei 12-12
Abstract: ixys dsei 60-06 ixys dsei 60-12 ixys 60-02 DWEP ixys dsei 12-06 IXYS DSEI 2
Text: Fast Recovery Epitaxial Diodes FRED Chips Type TVJM = 150°C VF ¬ @ IF TJ = 25°C V A DWEP 27 - 02 DWEP 37 - 02 DWEP 77 - 02 1.15 1.10 1.20 32 100 125 DWEP 8 - 06 DWEP 12 - 06 DWEP 15 - 06 DWEP 23 - 06 DWEP 25 - 06 DWEP 35 - 06 DWEP 55 - 06 DWEP 75 - 06 1.7
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DSEI IXYS 2x31-12B
Abstract: 2x31-12B
Text: DSEI 2x30-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 30-12P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-12P
30-12P
20070731a
DSEI IXYS 2x31-12B
2x31-12B
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ixys dsei
Abstract: IRM 1200 80D-5
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 1200 1200 IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 30-12P DSEI 2x 31-12P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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30-12P
31-12P
ixys dsei
IRM 1200
80D-5
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E72873
Abstract: 2x31
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1200 1200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-12B DSEI 2x 31-12B DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
E72873
30-12B
31-12B
E72873
2x31
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Untitled
Abstract: No abstract text available
Text: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM
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12-12AZ
O-263
20131029a
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ixys dsei 2x101
Abstract: No abstract text available
Text: IXYS _ DSEI 2x101 Fast Recovery Epitaxial Diode FRED VR3M V„RM V V 1200 1200 PI ° DSEI 2x 101-12A Test Conditions If(RMS) Ifbm Tyj —T vjm T c = 50°C; rectangular, d = 0.5 tp < 10 |xs; rep. rating, pulse width limited by T vjm Ifsm Tvj = 45°C;
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2x101
E72873
ixys dsei 2x101
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DSEI35-06AS
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEI 35 VRRM = 600 V ^FAVM trr 35 A = 35 ns = Advanced data v v 600 600 DSEI 35-06AS A = Anode, C = Cathode, NC = No connection TAB = Cathode Symbol Test Conditions Maximum Ratings ^FRMS W m ^FRM TVJ - "^"vjm Tc = 65°C; rectangular, d = 0.5
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DSEI35
DSEI35-06AS
O-263
DSEI35-06AS
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Untitled
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine
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2x161
2x158
OT-227
2x161-02A
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IXYS DSEI 2X121-02a
Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Text: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40
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O-252AA
DSEI6-06AS
8-06AS
2-06A
2-10A
2-12A
0-12A
19-06AS
36-06AS
0-06A
IXYS DSEI 2X121-02a
ixys dsei 2x30-12b
DSEI IXYS 2x31-12B
ixys dsei 1x31-06c
IXYS DSEI 2
DSEI 120-06A
1x31-06c
dsei 2x60
IXYS DSEI 2X61-12B
DSEI IXYS 2x31
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Untitled
Abstract: No abstract text available
Text: □ IXYS Fast Recovery Epitaxial Diode FRED V RSM V V RRM DSEI30 IFAVM V , 37 A 600 V t 35 ns RRM f ^ A A Type c TO-247 AD V 640 600 DSEI 30-06A Symbol Test Conditions ^FRMS ^FAVM * ^FRM TVJ ~ T vjm T0 = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM
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DSEI30
O-247
0-06A
4bflb22b
0003fl7b
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ixys dsei
Abstract: IXYS DSEI 2X
Text: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400
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2x101-02A
OT-227
10jas;
D-68623
00D3M43
ixys dsei
IXYS DSEI 2X
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