Dsei 2x101-12A
Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000
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O-252
0-06A
0-10A
0-12A
D1-16
D1-18
D1-20
0-02A
Dsei 2x101-12A
ixys dsei 1x31-06c
ixys dsei 2x31-06c
IXYS DSEI 2X121-02a
ixys dsei 2x30-06c
DSEI IXYS 2x31-12B
2x61-06c
2x121-02a
2x31-12B
2x31-10b
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806-AS
Abstract: No abstract text available
Text: DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS Type A C TO-220 AC DSEI 8-06A C A C TO-263 AB DSEI 8-06AS NC A = Anode, C = Cathode, NC = No Connection, TAB = Cathode
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8-06AS
O-220
O-263
20090106a
806-AS
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ixys dsei
Abstract: DSEI 806-AS ixys dsei 8 8-06A IXYS
Text: DSEI 8-06A DSEI 8-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC DSEI 8-06A C Symbol Conditions Maximum Ratings IFRMS IFAVM IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5
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8-06AS
O-220
20090106a
ixys dsei
DSEI
806-AS
ixys dsei 8
8-06A IXYS
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8-06A IXYS
Abstract: ixys dsei 806-AS TO-283 8-06AS VRRM600V 806A
Text: DSEI 8-06A DSEI 8-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ms Type A C TO-220 AC DSEI 8-06A C Symbol Conditions Maximum Ratings IFRMS IFAVM IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5
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8-06AS
O-220
20090106a
8-06A IXYS
ixys dsei
806-AS
TO-283
8-06AS
VRRM600V
806A
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IXYS DSEI 2X121
Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89
Text: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700
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DO-203
75-08B
75-12B
75-16B
75-18B
IXYS DSEI 2X121
IXYS DSEI 2X121-02a
2x121-02a
IXYS DSEI 2X61
DO-205
2X61-10B
110-12F
dsei 2x60
110-16F
6206 sot 89
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ixys dsei
Abstract: ixys dsei 8 806-AS
Text: Fast Recovery Epitaxial Diode FRED DSEI 8 IFAVM = 8 A VRSM A V VRRM VRRM = 600 V = 35 ns trr Type C TO-220 AC DSEI 8-06A V C 640 640 600 600 DSEI 8-06A DSEI 8-06AS C Maximum Ratings A A = Anode, C = Cathode TO-263 AA DSEI 8-06AS Symbol Test Conditions I FRMS
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O-220
8-06AS
O-263
50ture.
ixys dsei
ixys dsei 8
806-AS
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E72873
Abstract: ixys dsei 61-12b
Text: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 200 200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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OT-227
E72873
1-02A
E72873
ixys dsei 61-12b
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IXYS DSEI 2
Abstract: ixys dsei 2x30
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5
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30-06P
31-06P
IXYS DSEI 2
ixys dsei 2x30
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ixys dsei
Abstract: IXYS DSEI 2 ixys dsei 8 806-AS
Text: DSEI 8 Fast Recovery Epitaxial Diode FRED VRSM V 640 640 VRRM Type C A TO-263 AA DSEI 8-06AS NC V 600 600 A DSEI 8-06A DSEI 8-06AS C (TAB) Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
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O-263
8-06AS
O-220
ixys dsei
IXYS DSEI 2
ixys dsei 8
806-AS
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ixys dsei 2x31-06c
Abstract: 2x31-06c ixys dsei ixys dsei 2x30 06c ultrasonic distance circuit design IXYS DSEI 2
Text: DSEI 2x30-06P IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 Type DSEI 2x 30-06P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-06P
30-06P
20070731a
ixys dsei 2x31-06c
2x31-06c
ixys dsei
ixys dsei 2x30 06c
ultrasonic distance circuit design
IXYS DSEI 2
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ixys dsei 12-12
Abstract: ixys dsei 60-06 ixys dsei 60-12 ixys 60-02 DWEP ixys dsei 12-06 IXYS DSEI 2
Text: Fast Recovery Epitaxial Diodes FRED Chips Type TVJM = 150°C VF ¬ @ IF TJ = 25°C V A DWEP 27 - 02 DWEP 37 - 02 DWEP 77 - 02 1.15 1.10 1.20 32 100 125 DWEP 8 - 06 DWEP 12 - 06 DWEP 15 - 06 DWEP 23 - 06 DWEP 25 - 06 DWEP 35 - 06 DWEP 55 - 06 DWEP 75 - 06 1.7
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IXYS DSEI 2
Abstract: E72873 dsei 31-06c ixys dsei
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
IXYS DSEI 2
E72873
dsei 31-06c
ixys dsei
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30u60
Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Text: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600
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-200A/
TB60S
TA60CS
TA60C
04E120
09E120
30u60
ixys dsei 8-06
ixys dsei
STTH 3060
MUR 8120
ixys dsei 12-12
10U60
RHRG 8120
40U60
ixys dsei 60-06
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ixys dsei 2x101
Abstract: No abstract text available
Text: IXYS _ DSEI 2x101 Fast Recovery Epitaxial Diode FRED VR3M V„RM V V 1200 1200 PI ° DSEI 2x 101-12A Test Conditions If(RMS) Ifbm Tyj —T vjm T c = 50°C; rectangular, d = 0.5 tp < 10 |xs; rep. rating, pulse width limited by T vjm Ifsm Tvj = 45°C;
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2x101
E72873
ixys dsei 2x101
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IXYS DSEI 2X121-02a
Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Text: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40
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OCR Scan
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O-252AA
DSEI6-06AS
8-06AS
2-06A
2-10A
2-12A
0-12A
19-06AS
36-06AS
0-06A
IXYS DSEI 2X121-02a
ixys dsei 2x30-12b
DSEI IXYS 2x31-12B
ixys dsei 1x31-06c
IXYS DSEI 2
DSEI 120-06A
1x31-06c
dsei 2x60
IXYS DSEI 2X61-12B
DSEI IXYS 2x31
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Untitled
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine
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OCR Scan
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2x161
2x158
OT-227
2x161-02A
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Untitled
Abstract: No abstract text available
Text: □ IXYS Fast Recovery Epitaxial Diode FRED V RSM V V RRM DSEI30 IFAVM V , 37 A 600 V t 35 ns RRM f ^ A A Type c TO-247 AD V 640 600 DSEI 30-06A Symbol Test Conditions ^FRMS ^FAVM * ^FRM TVJ ~ T vjm T0 = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM
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OCR Scan
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PDF
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DSEI30
O-247
0-06A
4bflb22b
0003fl7b
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ixys dsei 2x30-04c
Abstract: No abstract text available
Text: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine
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OCR Scan
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2X30-04C/06C
2X31-04C/06C
DSEI2x30
00D343R
D-68623
ixys dsei 2x30-04c
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ixys dsei 2x30-05c
Abstract: ixys dsei 2x30-04c ixys dsei
Text: 4bflb22b O G O ia n D Y I X E H B IIX Y S DSEI 2x30 IFAV DSEI 2x31 VRRM Fast Recovery Epitaxial Diodes 2x30 A 400-600 V < 35 ns miniBLOC, SOT-227 B v RSM V T yp e Typ e V V 440 540 640 400 500 600 Symbol Test Conditions •cavi . TVJ = Tvjm Tc = 85°CT rectangular, 6= 0.5
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OCR Scan
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4bflb22b
OT-227
2X30-04C
2x31-040
2x30-05C
2x31-050
2x30-060
2x31-060
D-68619
ixys dsei 2x30-05c
ixys dsei 2x30-04c
ixys dsei
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2x30-10B
Abstract: 2x31-10b ixys dsei 2x31-10b ixys dsei 2x30-10b
Text: MbflL.22b 0001021 T47 « I X Y □IXY S Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t. = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSM V 640 800 1000 v rrm T y p e T y p e V 600 800 1000 DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B
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OCR Scan
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PDF
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OT-227
2x30-06B
2x31-06B
2x30-08B
2x31-08B
2x30-10B
2x31-10B
D-68619
2x31-10b
ixys dsei 2x31-10b
ixys dsei 2x30-10b
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dsei 31-06c
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5
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OCR Scan
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PDF
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30-04C
31-04C
30-06C
31-06C
OT-227
E72873
dsei 31-06c
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Untitled
Abstract: No abstract text available
Text: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi
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OCR Scan
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PDF
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OT-227
2x61-06B
2x61-08B
2x61-10B
D-68619
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DSE119
Abstract: 806A TR 0420
Text: ÖIXYS DSEI 8 Iravm = 8 A Vrrm = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED v RSM ^ — s. V t rrm TO-263 AA Type D SE ,8-°6AS V V 640 640 600 600 Symbol ^FRMS W m ^FRM ^FSH l2t DSEI 8-06A DSEI 8-06AS C (TAB) Test Conditions Maximum Ratings
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OCR Scan
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O-263
8-06AS
O-220
DSE119
DSE119
806A
TR 0420
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ixys dsei 2x30-06c
Abstract: ixys dsei 2x30-05c
Text: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060
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OCR Scan
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4bflb52b
OT-227
2X30-04C
2X30-05C
2X30-06C
2x31-050
2x31-060
D-68619
ixys dsei 2x30-06c
ixys dsei 2x30-05c
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