IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
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D-68623
IXBOD1-08
IXBOD1-09
IXBOD1-10
DSEP30-06BR
DSEP30-12CR
IXGP70N33
IXGQ90N33
SK0604
IXTP76N075
IXER35N120D1
IXGP70N33TBM-A
DH60-18A
VBO19
SK0712
IXTH1N250
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IXYS CORPORATION
Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS
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DMA10P1600PZ
/1600V)
CMA50E1600TZ
DSP45-16TZ
O-263
D-68623
CH-2555
IXYS CORPORATION
MTI85W100GC
CLB30I1200HB
200WX75GD
Thyristor 12kV 10 kA
MTI200WX75GD
AGT ssr
up/MTI85W100GC
MTI relay
CMA30E1600PZ
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bod ixys
Abstract: IXYS IXBOD
Text: Breakover Diodes Applications ● Transient voltage protection High-voltage switches ● Crowbar ● Lasers ● Pulse generators ● i IH IBO V VH VBO H 1999 IXYS All rights reserved H-1 IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V
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00-1000V
035x2mm)
bod ixys
IXYS IXBOD
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IXBOD1-06
Abstract: No abstract text available
Text: IXBOD1 Breakover Diode Gen1 BOD1 VBO [V] VBO = 600-1000 V IAVM = 0.9 A Standard Types 600 ±50 IXBOD1-06 700 ±50 IXBOD1-07 800 ±50 IXBOD1-08 900 ±50 IXBOD1-09 1000 ±50 IXBOD1-10 Backside: isolated A K Features / Advantages: Applications: Package: FP-Case
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IXBOD1-06
IXBOD1-07
IXBOD1-08
IXBOD1-09
IXBOD1-10
pins101
20130822a
IXBOD1-06
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Untitled
Abstract: No abstract text available
Text: IXBOD2 Breakover Diode Gen2 BOD2 VBO [V] VBO = 400-1400 V IAVM = 0.9 A Standard Types 400 ±50 IXBOD2-04 500 ±50 IXBOD2-05 600 ±50 IXBOD2-06 700 ±50 IXBOD2-07 800 ±50 IXBOD2-08 900 ±50 IXBOD2-09 1000 ±50 IXBOD2-10 1100 ±50 IXBOD2-11 1200 ±50 IXBOD2-12
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IXBOD2-04
IXBOD2-05
IXBOD2-06
IXBOD2-07
IXBOD2-08
IXBOD2-09
IXBOD2-10
IXBOD2-11
IXBOD2-12
IXBOD2-13
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2a103
Abstract: No abstract text available
Text: Breakover Diodes Applications l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators l i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-. for every break down voltage of VBO > 2000 V please contact us.
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00-1000V
2a103
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IXYS IXBOD
Abstract: bod ixys zener 20 15r h8 diode zener c822c kp 100 thyristor
Text: Breakover Diodes Applications l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators l i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-. for every break down voltage of VBO > 2000 V please contact us.
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00-1000V
IXYS IXBOD
bod ixys
zener 20 15r
h8 diode zener
c822c
kp 100 thyristor
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Untitled
Abstract: No abstract text available
Text: IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V IAVM = 0.9 A A K 600 ±50 700 ±50 800 ±50 900 ±50 1000 ±50 IXBOD 1 -06 IXBOD 1 -07 IXBOD 1 -08 IXBOD 1 -09 IXBOD 1 -10 Symbol Conditions ID TVJ = 125°C; Ratings 20 V = 0,8x VBO
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00-1000V
035x2mm)
material80A;
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Untitled
Abstract: No abstract text available
Text: IXBOD 1 -12R.42R D Breakover Diode Modules Version: RD Version: R VBO Standard BOD - VBO Standard BOD - VBO Standard V Types Elements V Types Elements V Types IXBOD 1 -12R(D) IXBOD 1 -13R(D) IXBOD 1 -14R(D) IXBOD 1 -15R(D) IXBOD 1 -16R(D) IXBOD 1 -17R(D)
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mosfet controlled thyristor
Abstract: mcc 55-12 a3 diode smd diode nomenclature ixys mcc 56 smd diode a3 MCC SMD DIODE H- bridge mosfet circuit smd 3 phase rectifier bridge 3 phase rectifier scr controller
Text: Product Nomenclature Diode Dice C-DWEP 69-12 Sample A3 Packing method C T W Single dice in trays, electrically tested Dice in wafers, unsawed, electrically tested, inked bad die Dice in wafers on foil, sawed, electrically tested, inked bad die Die function
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1-42RD
mosfet controlled thyristor
mcc 55-12
a3 diode smd
diode nomenclature
ixys mcc 56
smd diode a3
MCC SMD DIODE
H- bridge mosfet circuit
smd 3 phase rectifier bridge
3 phase rectifier scr controller
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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IXBOD1-14R
Abstract: IXBOD1-08 IXBOD1-10 IXBOD1-06
Text: Technology Page 1 of 2 Breakover Diodes BOD Features: Transient voltage protection for thyristors and diodes High voltage switches Crowbars Laser pulsers Pulse generators - Voltages from 600V to 4200V Pulse current up to 200A Expand product table » » PartNumber
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IXBOD1-25RD
IXBOD1-26R
IXBOD1-26RD
IXBOD1-28R
IXBOD1-28RD
IXBOD1-30R
IXBOD1-30RD
IXBOD1-32R
IXBOD1-32RD
IXBOD1-34R
IXBOD1-14R
IXBOD1-08
IXBOD1-10
IXBOD1-06
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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IXYS IXBOD
Abstract: No abstract text available
Text: Schottky Diode 10-95 A V RRM V 1 'f a v @ T1c A V FM @ 1 "FM °C 1 *AR mJ V @ RM rated V RWM mA A T j max. °C Package style Fig. No. Type The developm ent of Schottky diodes chips in the voltage range of V RRM = 35 - 100 V and for Beginning 1997 will be contained these diodes in the IXYS delivery program.
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diode js
Abstract: DIODE JS.6 IXYS IXBOD
Text: n i • I i1 YA vJL U IXBOD 1 -06.10 Single Breakover Diode > o ffl ±50 ±50 ±50 ±50 =600 -1000V ^AVM ” A Standard V 600 800 900 1000 VB0 Types IXBOD IXBOD IXBOD IXBOD 1 -06 1 -08 1 -09 1 -10 Symbol Test Conditions Ratings Id T w = 25°C; V = 0,8x V B0
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-1000V
035x2mm)
diode js
DIODE JS.6
IXYS IXBOD
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