J 2N930 Search Results

2N65s

Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
Contextual Info: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

BCY591

Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
Contextual Info: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

MPSA18 BC550

Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
Contextual Info: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F

bcy5b

Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
Contextual Info: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

Contextual Info: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4

Contextual Info: CRIMSON S E M I C O ND UC TO R INC TT •.~>=. •^^ - 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 2 9 2 D DfViCE TYPl PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB V i M IN IVI M IN (VI M IN («IAI M A X |V| De ( E s m o ^ b INC ' J ~ — 3 & - c>'i COB fT Nf tp tl U A f t

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

BSX21

Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
Contextual Info: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

Contextual Info: PLESSEY SEI1IC0ND/DISCRETE | TS DÌf| 752D533 O D D ^ E S 3 95D 04925 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E T? Z D L .J NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS i The transistors shown in this table are characterised for low noise, low level amplification and are particularly

Contextual Info: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

JIDC

Contextual Info: SE M IC O N D U C T O R TECHNICAL DATA 2N930JAN, JTX Processed per MIL-S-19500/253 NPN Silicon Sm all-Signal Transistor CRYSTALOWCS 2805 Veterans Highway Suite 14 designed fot i o * powuf am putar applicano* RonkOTkOfTì*. N.Y. 11779 MAXIMUM R A T IN G S

sf317

Abstract: SCR 2N1595
Contextual Info: PQWEREX INC 74 DE I 7 2 ^ 4 ^ 5 3 DDP1341 SCR ÖT T-i$' // ” I 2 N 1 5 9 5 -9 9 I 2N929 S E E GES929 2N930 S E E GES930 The 2N1595 series of Silicon Controlled Rectifiers are planar-passivated, all-diffused, three junction, reverse blocking triode thyristors for low power switching and con­

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N930. NPN Silicon Small-Signal Transistor CR Y S TA IO N C S 2805 veterww Highway Veterans Hij Suite 14 designad for low power amplifier applications. Ronkonkoma, N.Y. 11778 MAXIMUM RATINGS Symbol Valu« Collector-Emitter Voltage

Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2 N930 LOW-LEVEL, LOW -NOISE AMPLIFIERS D E S C R IP T IO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for use in high performance, low-level, low-noise ampli­ fier applications.

2N930

Contextual Info: 2N930, A M A X IM U M RATINGS Symbol 2N930 2N930A Unit C o lle cto r-E m itte r Voltage VCEO 45 45 Vdc C ollector-B ase V o ltage VCBO 45 60 Vdc Em itter-Base V o ltage vebo 5.0 6.0 Vdc Rating lC 30 m A dc Ty\ = 25cC Pd 0.5 3.33 W m W /T T o ta l Device D issipa tion a T q = 25°C

2n930

Abstract: 2N930A A-2N930
Contextual Info: 2N930, A M AXIM U M RATINGS R a tin g Sym bol 2N930 2N930A U n it v CEO 45 45 Vdc C o lle cto r-E m itte r V o lta g e C o lle cto r-B ase V olta g e v CBO 45 60 Vdc E m itte r-B a se V olta g e v EBO 5.0 6.0 Vdc C o lle c to r C urrent >C 30 m Adc To tal D evice D issip a tio n @ T a = 25°C

Contextual Info: 3QE D 7^237 0031101 3 T ' Z \ - \ 1 Gl SCS-THOMSON 2N930 me S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTIO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for use in high performance, low-level, low-noise am­

Contextual Info: Illl = ^ = Illl SEME 2N930CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)

2N930

Abstract: 2N930A
Contextual Info: Boca Semiconductor Corp. BSC 2N930, A M A X IM U M RATINGS Sym bol 2N930 2N930A U n it C o lle c t o r - E m it t e r V o lta g e VCEO 45 45 Vdc C o lle c to r - B a s e V o lta g e VCBO 45 60 Vdc E m itt e r - B a s e V o lta g e V e BO 5.0 6 .0 R a tin g

2N930

Contextual Info: 3QE ]> 7 t 2 clS37 0 0 3 1 1 0 1 3 SCS-THOMSON ^ D O S ] ll L i ( g lF [ R ] ( Q ) K ! l D Û S S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS D E S C R IP T IO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO -18 metal case, designed for