gps l10
Abstract: 24PIN CXG1115AER signal amplifier 800 mhz cdma
Text: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)
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CXG1115AER
CXG1115AER
VQFN-24P-04
gps l10
24PIN
signal amplifier 800 mhz cdma
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Untitled
Abstract: No abstract text available
Text: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)
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CXG1115AER
CXG1115AER
VQFN-24P-04
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24PIN
Abstract: CXG1118ER GC118
Text: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1118ER
CXG1118ER
VQFN-24P-03
24PIN
GC118
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Untitled
Abstract: No abstract text available
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1115ER
CXG1115ER
24PIN
VQFN-24P-03
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3618A
Abstract: 24PIN CXG1118ER SONY CHOKE cxg1118
Text: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1118ER
CXG1118ER
VQFN-24P-03
3618A
24PIN
SONY CHOKE
cxg1118
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gps l10
Abstract: No abstract text available
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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Original
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CXG1115ER
CXG1115ER
24PIN
VQFN-24P-03
gps l10
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24PIN
Abstract: CXG1115ER
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1115ER
CXG1115ER
VQFN-24P-03
24PIN
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P-Channel Depletion Mode FET
Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic
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AN101
P-Channel Depletion Mode FET
p channel depletion mosfet
an101 siliconix
N-Channel JFET FETs
JFETs Junction FETs
Junction FETs JFETs
list of n channel fet
n channel depletion MOSFET
Depletion MOSFET
depletion
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4410D
Abstract: F4410D
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series j SUPER LOW NOISE InGaAs HEMT 1-
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F4410D
4410D
MGF4416D
MGF4417D
MGF4418D
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f2445
Abstract: j fet f2445
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ; MGF244S | I \ | MICROWAVE POWER GaAs FET j DESCRIPTION The M G F2445, power GaAs FET w ith OUTLINE DRAWING an N-channel U n it: m ilhm eters inches schottky gate, is designed fo r use in S to Ku band am pli
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MGF244S
F2445,
f2445
j fet f2445
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M 1661 S
Abstract: No abstract text available
Text: FLK102XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 30.0dBm Typ. High Gain: G-j^B = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability I Drain DESCRIPTION Drain É The FLK102XV chip is a power GaAs FET that is designed for
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FLK102XV
FLK102XV
M 1661 S
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> Ì MGFX36V0717| i 3 ; \ |_ 1 0 . 7 ~ l l . 7 G H z BAND 4 W INTERNALLY MATCHED GaAs FET j DESCRIPTION The M G F X 3 6 V 0 7 1 7 is an internally impedance matched GaAs power FET especially designed for use in 1 0 .7 — 1 1 .7
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MGFX36V0717|
55add
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FLK202XV
Abstract: No abstract text available
Text: FLK202XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G -j^B = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability DESCRIPTION The FLK202XV chip is a pow er GaAs FET that is designed
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FLK202XV
FLK202XV
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MICRON POWER RESISTOR MLS
Abstract: chip die hp transistor
Text: MwT-A11 14 GHz High Power GaAs FET MICROWAVE TECHNOLOGY J*- 7S +| • • • rn inmmin 101ini r F Ì - 86 -J 1/1 ''I t- 75 J £ Ì - 186 - * N- + 68 mmt m i 343 - 1 • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN
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MwT-A11
MwT-A11
MICRON POWER RESISTOR MLS
chip die hp transistor
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ms 7616
Abstract: 91564
Text: J R , HEXAWAVS HWL34YRF Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL34YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Features Low Cost G aA s P ow er F E T
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HWL34YRF
HWL34YRF
12W60
ms 7616
91564
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0117 0317
Abstract: 6537 fet
Text: J R , HEXAWAV5 HWL26NPA Hexawave, Inc. L-Band Power GaAs FET 6/18/98 Description Rev. A Outline Dimensions The H W L26N PA is a m edium Pow er G aA s FET using surface m ount type plastic package for various L -B and applications. It is suitable for various 900
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HWL26NPA
300mA
IS22I
0117 0317
6537 fet
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FLk052
Abstract: No abstract text available
Text: FLK052XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a power GaAs FET that is designed for
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FLK052XV
FLK052XV
FLk052
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FLK102XV
Abstract: FLK102
Text: FLK102XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G -j^B = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability I Drain DESCRIPTION Drain É The FLK102XV chip is a pow er GaAs FET that is designed for
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FLK102XV
FLK102XV
25\xm
FLK102
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Untitled
Abstract: No abstract text available
Text: Advance Information S O N Y PHS Receiver Mixer_ CXG1034TN J escription The CXG1034TN is a receiver mixer MMIC designed using Sony’s GaAs J-FET process. • • • • Low distortion: Input IP3 = +1.5 dBm Typ. Low LO input power operation: P lo = -1 5 dBm
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CXG1034TN
CXG1034TN
10-pin
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FLC081XP
Abstract: No abstract text available
Text: F LC 081 X P fujÎtsu GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r ia(jç| = 31.5%(Typ.) Proven Reliability DESCRIPTION The FLC081XP chip is a power GaAs FET that is designed for general
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FLC081XP
FLC081XP
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FLK012
Abstract: FLK012XP
Text: FLK012XP c?„. G a A s F E T a n d H E M T Chips r U J IlM J FEATURES • • • • High Output Power: P-|dB = 20.5dBm Typ. High Gain: G-j^B = 8.0dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability DESCRIPTION The FLK012XP chip is a power GaAs FET that is designed for
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FLK012XP
FLK012XP
FLK012
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Untitled
Abstract: No abstract text available
Text: FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G -j^B = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability &Bp|B|^Bp|B|^B P|B|^|b P|b P|B DESCRIPTION The FLX257XV chip is a pow er GaAs FET that is
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FLX257XV
FLX257XV
FCSI0598M200
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HFET-1001
Abstract: HFET-5001
Text: ÍNEW H EW LE T T ^ j j P A CKA RD COMPONENTS MICROWAVE GaAS FET CHIP HFET- 5001 Features HIGH PidB LINEAR POWER 18.5 dBm Typical at 12 GHz 19.5 dBm Typical at 10 GHz 21.0 dBm Typical at 4 GHz with 11.0 dB Associated Gain SUITABLE FOR BROADBAND APPLICATIONS
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HFET-5001
HFET-1001
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bc 149 transistor
Abstract: atic 144 WJ-CA45-1
Text: u j J A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN llllillil Outline Drawings A 4 5 -1 0.460 n (11.41) ü Specifications11
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A45-1
SMA45-1
1-800-WJ1
bc 149 transistor
atic 144
WJ-CA45-1
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