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    FLK052 Price and Stock

    Fuji Electric Co Ltd FLK052WG

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLK052WG 3
    • 1 $100.0416
    • 10 $95.0395
    • 100 $95.0395
    • 1000 $95.0395
    • 10000 $95.0395
    		Buy Now

    FUJITSU Semiconductor Limited FLK052WG

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLK052WG 1
    • 1 $132.3632
    • 10 $132.3632
    • 100 $132.3632
    • 1000 $132.3632
    • 10000 $132.3632
    		Buy Now

    FLK052 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLK052WG Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLK052WG Unknown FET Data Book Scan PDF
    FLK052XV Unknown FET Data Book Scan PDF

    FLK052 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLK052WG

    Abstract: No abstract text available
    Text: FLK052WG X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK052WG is a power GaAs FET that is designed for general


    Original     		PDF FLK052WG FLK052WG

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet

    Untitled

    Abstract: No abstract text available
    Text: FLK052WG Film ali rU JIl X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK052WG is a power GaAs FET that is designed for general


    OCR Scan     		PDF FLK052WG FLK052WG

    Untitled

    Abstract: No abstract text available
    Text: FLK052XV G a As F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current >d s s Test Conditions 200 300 mA - 100 - mS -1.0 -2.0 -3.5 V - V Vqs = 5V, Ids = 125mA Pinch-off Voltage vp Vos = 5V, ids =


    OCR Scan     		PDF FLK052XV 125mA 10pcs.

    FLC301XP

    Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
    Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5


    OCR Scan     		PDF FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151

    FLk052

    Abstract: No abstract text available
    Text: FLK052XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a power GaAs FET that is designed for


    OCR Scan     		PDF FLK052XV FLK052XV FLk052

    FLK052

    Abstract: FLK052WG
    Text: FLK052 WG X-kii B and Power iaAs I E I s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Condition S igillo! Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 3.75 w -65 to +175 °c °c Total Power Dissipation Tc = 25°C


    OCR Scan     		PDF FLK052 1000Q Source-151 FLK052WG

    FLK052xv

    Abstract: No abstract text available
    Text: FLK052XV Füjrrsu GaAs FE T and H E M T Chips FEATURES • • • • High O utput Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ g = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a pow er G aAs FET that is designed for


    OCR Scan     		PDF FLK052XV FLK052XV 25\xm

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLC301XP

    Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
    Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X


    OCR Scan     		PDF FLC081XP FLC151XP FLC301XP FSX017X FSX51X FSX52X FLX252XV FLK012XP FLK022XV* FLK052XV FLC301XP fsx52 FUJITSU MICROWAVE XP 215 FLK202 FSX51 FLC151

    FLC081XP

    Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
    Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A


    OCR Scan     		PDF FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK

    FLK202MH-14

    Abstract: FLK052WG
    Text: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH


    OCR Scan     		PDF FLX102MH-12* 2MH-12* FLK012W FLK022W FLK052W FLK102MH-14* FLK202MH-14* FLR016FH FLR026FH FLK202MH-14 FLK052WG