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    TE Connectivity CRGCQ1206J10R

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    DigiKey CRGCQ1206J10R Digi-Reel 180,165 1
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    TE Connectivity RR01J10RTB

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    TE Connectivity CRGCQ2010J10R

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    DigiKey CRGCQ2010J10R Digi-Reel 41,505 1
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    TE Connectivity RR03J10RTB

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    STMicroelectronics LD39030SJ10R

    IC REG LINEAR 1V 300MA 4FLIPCHIP
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    DigiKey LD39030SJ10R Cut Tape 4,408 1
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    J10R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LCD 2x16, 16 pin up, 16 pin down Module Date Code

    Abstract: push button using psoc to activate a counter project report of simple PWM circuit 9v ac power supply using bread board MINIPROG3 verilog code to generate sine wave led display board using psoc mini projects topics Uart project mini hardware projects
    Text: PSoC3 DVK CY8CKIT-001 PSoC Development Kit Guide Doc. # 001-48651 Rev. * June 16, 2009 Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com [+] Feedback Copyrights


    Original
    PDF CY8CKIT-001 CY8CKIT-001 LCD 2x16, 16 pin up, 16 pin down Module Date Code push button using psoc to activate a counter project report of simple PWM circuit 9v ac power supply using bread board MINIPROG3 verilog code to generate sine wave led display board using psoc mini projects topics Uart project mini hardware projects

    smd diode code pj 3139

    Abstract: pj 3316 diode 0/smd diode code pj 3139
    Text: CY8CKIT-001 PSoC Development Kit Guide Doc. # 001-48651 Rev. *L November 16, 2012 Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2009-2012. The information contained herein is subject to change without notice.


    Original
    PDF CY8CKIT-001 CY8CKIT-001 smd diode code pj 3139 pj 3316 diode 0/smd diode code pj 3139

    eee mini projects

    Abstract: command words lcd display 16x2 push button using psoc to activate a counter mini projects topics tms kit schematic omron vs mini j7 omron VS MINI J7 J6 SMD CY8C3866 eee mini projects based on protection CY8C28000-24PVXI
    Text: CY8CKIT-001 PSoC Development Kit Guide Doc. # 001-48651 Rev. *C May 21, 2010 Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2009-2010. The information contained herein is subject to change without notice.


    Original
    PDF CY8CKIT-001 CY8CKIT-001 eee mini projects command words lcd display 16x2 push button using psoc to activate a counter mini projects topics tms kit schematic omron vs mini j7 omron VS MINI J7 J6 SMD CY8C3866 eee mini projects based on protection CY8C28000-24PVXI

    display lcd 16x2 232

    Abstract: CY8C3866 J6 SMD Philips ECG catalog CY8C3866AXI-040 push button using psoc to activate a counter CY8C5588AXI-060 3m 3335 10 pin ribbon cable philips ecg component guide doc lcd 16x2 14 pin
    Text: CY8CKIT-001 PSoC Development Kit Guide Doc. # 001-48651 Rev. *E April 19, 2011 Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2009-2011. The information contained herein is subject to change without notice.


    Original
    PDF CY8CKIT-001 727-CY8CKIT-009A CY8CKIT-009A display lcd 16x2 232 CY8C3866 J6 SMD Philips ECG catalog CY8C3866AXI-040 push button using psoc to activate a counter CY8C5588AXI-060 3m 3335 10 pin ribbon cable philips ecg component guide doc lcd 16x2 14 pin

    6726B

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 8 Bit Fast Static Random Access Memory The M C M 6726B is a 1,048,576 bit static random access m em ory organized as 131,072 w ords of 8 bits. T h is device is fabricated >ising high perform ance s ili­ con—gate BiCM O S technology. S atic design e lim inates the need fo r external


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    PDF 6726B 6726B 6726BW CM6726BW 26BWJ10 MCM6726B

    m6926

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6926 Product Preview 128K x 8 Bit Fast Static Random Access Memory The MCM6926 is a 1.048,576 bit static random i>c access memory organized as 131,072 words of 8 bits. This device is fabricated r high performance silicongate BiCMOS technology. Static design eliminates•the need for external clocks


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    PDF MCM6926 MCM6926 MCM6926W m6926

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6729 Product Preview 256K x 4 Bit Fast Static Random Access Memory The M C M 6729 is a 1,048,576 bit static random a ccess m em ory organized as 262,144 x 4 bits. T h is device is fabricated using high p erform ance siiicon-gate


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    PDF MCM6729 MCM6729

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67Q804 Product Preview 256K x 4 Bit Synchronous Fast Static RAM WJ PACKAGE 400 MIL SOJ CASE 893 The M otorola M C M 67Q 804 is a 1.048,576 bit static random a ccess memory, o rganized as 262,144 x 4 bits. This device is fabricated using M otorola’s highperform ance silicon-gate B iC M O S technology. It features separate TTL input and


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    PDF MCM67Q804 CM67Q804 67Q0Q4 70804W MCM67Q804

    54260

    Abstract: 5L426 4260B/BSL-70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B MCM5S4260B Advance Information 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54260B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate


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    PDF MCM54260B 54260BJ70 54260BJ80 54260BJ10 54260BT70 54260BT80 54260BT10 54260BJ70R 54260BJ80R 54260 5L426 4260B/BSL-70

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726 Product Preview 128K x 8 Bit Fast Static Random Access Memory The MCM6726 is a 1,048.576 bit static random access memory organized as 131,072 x 8 bits. This device is fabricated using high performance silicon-gate


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    PDF MCM6726 MCM6726

    6726AW

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726A Product Preview 128K x 8 Bit Fast Static Random Access Memory The M C M 6726A is a 1,048,576 b it static random a ccess m em ory organized as 131,072 x 8 bits. This device is fab rica ted using high perfo rm a n ce silicon-gate


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    PDF MCM6726A MCM6726AW 6726AW J15R2 J10R2

    26DQ3

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs The M otorola M C M 67P 804 is a 1.048,576 bit static random a ccess m em ory organized as 262,144 x 4 bits. This device is fabricated using M otorola's highperform ance sllicon-gate B iC M O S technology. It fea tu re s separate TT L input and


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    PDF MCM67P804 DQ255i MCM67P804 67P804 67P804W J10R2 MCM67P804W J12R2 26DQ3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The MCM67Q804 is a 1,048,576 bit static random access nemory, organized as 262,144 x 4 bits. This device is fabricated using Motorola’s high-performance silicon-gate BiCMOS technology. It features separate TTL input and output buff­


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    PDF MCM67Q804 MCM67 67Q804 J10R2 J12R2 MCM67Q804

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726 128K x 8 Bit Fast Static Random Access Memory The MCM6726 is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. This device is fabricated using high performance silicongate BiCMOS technology. Static design eliminates the need for external clocks


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    PDF MCM6726 MCM67; J10R2 J12R2

    OHMITE 4854

    Abstract: ohmite 0454 ES150 OHMITE 0114A 1156d Ohmite 90J5RO 91j250 F409 S1K0 ohmite 1803
    Text: OHM ITE Cross Reference Manufacturing Company Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. Old No. New No. 0101 0102 0102A 0103 0103A 0104 0105 0106 0107 0108 0109 0110 0111 0112 0113 0113A 0114 0114A 0115


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    PDF 0200B 0200C 0200D 0200E 0200F 0200G 0200H 0200J 0200K 0200L OHMITE 4854 ohmite 0454 ES150 OHMITE 0114A 1156d Ohmite 90J5RO 91j250 F409 S1K0 ohmite 1803

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing


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    PDF MCM6728 J10R2 J12R2 J15R2

    MCM6706A-12

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6706A 32K x 8 Bit Static Random Access Memory The MCM6706A is a 262,144 bit static random access memory organized as 32,768 words of 8 bits, fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes.


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    PDF MCM6706A 28-lead MCM6706A-8 CM6706A-10= 67Q6A 6706AJ8 6706AJ10 6706AJ12 MCM6706A-12

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,0-18,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon— gate BiCMOS technology. Static design eliminates the need for external clocks


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    PDF MCM6728 MCM6728 J10R2 J12R2

    J10R2

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6729A Product Preview 256K x 4 Bit Fast Static Random Access Memory The M C M 6729A is a 1,048,576 bit static random a ccess m em ory orga n ized as 262,144 x 4 bits. This device is fabricated using high perform ance silicon-gate


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    PDF MCM6729A 6729AW J10R2 729AW J12R2 MCM6729AW J15R2 J10R2

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM101510 1M x 1 Bit Fast Static Random Access Memory with ECL I/O ECL 101K Levels ECL 100K @ - 5.2 V Are Required W J PACKAGE 4 0 0 M IL S O J C A S E 810 The M C M 101510 is a 1,048,576 bit static random a ccess m em ory organized as


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    PDF MCM101510 01510W CM101510

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs T h e M o torola M C M 6 7 P 8 0 4 is a 1,048,576 bit static random a c c e s s m em ory o rg a n ize d a s 2 62 ,14 4 x 4 bits. T h is d e v ice is fabricated using M o torola’s highperform ance s ilicon-gate B iC M O S technology. It featu res sep arate T T L input and


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    PDF MCM67P804 MCM67P804 67P804 MCM67P804WJ10 MCM67P804W J10R2 MCM67P804WJ12 MCM67P804WJ12R2

    JXXX

    Abstract: AO16A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54190B MCM5L4190B MCM5V4190B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The MCM54190B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 eighteen-bit words and fabricated with CMOS siiicon-gate pro­


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    PDF MCM54190B 54190BJ80 54190BJ10 54190B JXXX AO16A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM6290C 16K x 4 Bit Static RAM With Output Enable The MCM6290C with OE is a 65,536 bit static random access memory organized as 16,384 words of 4 bits, fabricated using Motorola's high-performance silicon-gate CMOS


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    PDF MCM6290C MCM6290C 629QC 6290CP12 6290C 6290CP20

    AST500

    Abstract: No abstract text available
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM6729A 256K x 4 Bit Fast Static Random Access Memory The MCM6729A is a 1.048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance sili­ con—gate BiCMOS technology. Static design eliminates the need for external


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    PDF MCM6729A MCM6729AW CM6729AW 6729AW J10R2 J12R2 AST500