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    J112 ON Search Results

    J112 ON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AV-THLIN2BNCM-025 Amphenol Cables on Demand Amphenol AV-THLIN2BNCM-025 Thin-line Coaxial Cable - BNC Male / BNC Male (SDI Compatible) 25ft Datasheet
    CN-DSUB50PIN0-000 Amphenol Cables on Demand Amphenol CN-DSUB50PIN0-000 D-Subminiature (DB50 Male D-Sub) Connector, 50-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CN-DSUBHD62PN-000 Amphenol Cables on Demand Amphenol CN-DSUBHD62PN-000 High-Density D-Subminiature (HD62 Male D-Sub) Connector, 62-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet
    SF Impression Pixel

    J112 ON Price and Stock

    onsemi J112

    Trans JFET N-CH 3-Pin TO-92 Bag / JFET N-CH 35V 625MW TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com J112 17,250
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    onsemi J112-D26Z

    5 mA, 35 V, N-Channel JFET Transistor
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    Onlinecomponents.com J112-D26Z 6,000
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    Teledyne Relays J112-26PM

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    Onlinecomponents.com J112-26PM 66
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    onsemi J112-D74Z

    J112 Series 35 V 5 mA Through Hole N-Channel JFET Chopper Transistor - TO-92
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    Onlinecomponents.com J112-D74Z
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    onsemi J112-D27Z

    5 mA, 35 V, N-Channel JFET Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com J112-D27Z
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    J112 ON Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J113

    Abstract: J112 Field Effect Transistors j112 ltd J111 VDS40 "igss 1 na"
    Text: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS TO-92 Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and commutators applications. ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage


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    350mW vds40 00x69477 J113 J112 Field Effect Transistors j112 ltd J111 "igss 1 na" PDF

    J112

    Abstract: J112 equivalent J112 jfet J1-12 j112 on jfet j112
    Text: J112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications


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    360mW J112 J112 equivalent J112 jfet J1-12 j112 on jfet j112 PDF

    Diode r4d

    Abstract: j112 fet J112 J112 jfet application note jfet J111 transistor
    Text: MOTOROLA Order this document by J112/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35


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    J112/D 226AA) Diode r4d j112 fet J112 J112 jfet application note jfet J111 transistor PDF

    j112

    Abstract: j112g J111
    Text: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


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    J111/D j112 j112g J111 PDF

    J112

    Abstract: Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na"
    Text: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS [VHC3RO ELECTRONICS Jill, J112, J113 are N-channel silicon , junction field effect transistors designed for analog switching, choppers and commutators applications. TO-92 ABSOLUTE MAXIMUM RATINGS -35 V 50mA


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    T0-92 350mW VDS40 80x69477 3-/T10371 J112 Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na" PDF

    J113 equivalent

    Abstract: J112 J111 J113 "Field-Effect Transistors" J112 equivalent Field-Effect Transistors J-112
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors


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    MAM042 J113 equivalent J112 J111 J113 "Field-Effect Transistors" J112 equivalent Field-Effect Transistors J-112 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


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    226AA) r14525 J112/D PDF

    J112 jfet

    Abstract: J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112
    Text: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


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    J111/D J112 jfet J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112 PDF

    MMBFJ111

    Abstract: J111 6R SOT23 J112 TO92
    Text: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.


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    MMBFJ111 MMBFJ112 SB51338 MMBFJ113 J111 6R SOT23 J112 TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.


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    MMBFJ111 MMBFJ112 SB51338 MMBFJ113 MMBFJ111 MMBFJ112 SB51338 PDF

    transistor j112

    Abstract: J112 jfet j112
    Text: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


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    226AA) r14525 J112/D transistor j112 J112 jfet j112 PDF

    jfet j112

    Abstract: J113 j111 transistor J112 J112 J112 TO92
    Text: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C


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    226AA) r14525 J111/D jfet j112 J113 j111 transistor J112 J112 J112 TO92 PDF

    MJ-112

    Abstract: No abstract text available
    Text: FMMJ111 to FMMJ113 S0T23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ111 - C11 FM M J112 - C12 FM M J113 - C13 APPLICATION AREAS: * ANALOG SWITCHES * CHOPPERS * COMMUNICATORS ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5 °C -3 5 V


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    S0T23 FMMJ111 FMMJ113 300/is; MJ-112 PDF

    J111

    Abstract: J113 J112 transistor J112 IEC134 Vgsoff -6V J112 TO92 m8910 marking j112
    Text: J111 J112 J113 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction field-effect transistors in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.


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    750fiforJ111 1550n 3150i2forJ113 M89-1044/RC J111 J113 J112 transistor J112 IEC134 Vgsoff -6V J112 TO92 m8910 marking j112 PDF

    J112

    Abstract: J113 J111 transistor J112 Scans-00946
    Text: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features


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    711002b 0Clb7cl75 3150S2 J112 J113 J111 transistor J112 Scans-00946 PDF

    J112

    Abstract: J113 j111 J112 jfet J111/5
    Text: ON Semiconductort N−Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain −Gate Voltage Rating VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C


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    O-226AA) J112 J113 j111 J112 jfet J111/5 PDF

    J111

    Abstract: j113 j112
    Text: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C


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    226AA) J111 j113 j112 PDF

    J112

    Abstract: transistor J112 J112 equivalent J1-12 J112K
    Text: J112 RoHS Compliant 20.2 x 5.3 x 12.8 mm E197851 Features • • • • Low power consumption .12W Ultra light weight Narrow width for high density mounting UL/CUL certified Dimensions shown in mm. Dimensions are shown for reference purposes only. Specifications and availability subject to change without notice.


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    E197851 250VAC 30VDC 1250VA 250VAC, 110VDC 12VDC J112K J112 transistor J112 J112 equivalent J1-12 J112K PDF

    J112

    Abstract: transistor J112 J111 J113 MMBFJ111 MMBFJ112 MMBFJ113
    Text: MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 G D G S TO-92 SOT-23 D S Mark: 6P / 6R / 6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. Absolute Maximum Ratings*


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    MMBFJ111 MMBFJ112 MMBFJ113 OT-23 MMBFJ111 MMBFJ112 J112 transistor J112 J111 J113 MMBFJ113 PDF

    BSR58LT1

    Abstract: No abstract text available
    Text: Junctional Field−Effect Transistors JFETs Switches and Choppers N−Channel P−Channel RDS on Ω Max Ciss pF Max Crss pF Max VGSS VGDO Volts Min Min Max Min VGS(off) Volts IDSS mA Max ton ns Max toff ns Max J112 − 50 28 5.0 35 1.0 5.0 5.0 − − −


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    MPF4392 2N5639 MPF4393 2N5638 BSR58LT1 MMBF4391LT1 PDF

    j111

    Abstract: No abstract text available
    Text: 711002b QGbV^VS 7 ci3 J111 J112 J113 IPHIN N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. Features • High speed switching


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    711002b 110a2b 1550S2 j111 PDF

    j111

    Abstract: J112 J113 MMBFJ111 MMBFJ112 MMBFJ113
    Text: MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 G D G S TO-92 SOT-23 D S Mark: 6P / 6R / 6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings*


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    MMBFJ111 MMBFJ112 MMBFJ113 OT-23 MMBFJ111 MMBFJ112 j111 J112 J113 MMBFJ113 PDF

    TO-236 MARKING CODE C3

    Abstract: J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix
    Text: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number Vcs oft (V) J/SST111 J/SST112 -3 -1 J/SST113 r DS(on) Max (Q) lo(oft) Typ (pA) ton Typ (ns) to-10 to-5 30 5 4 50 5 4 < -3 100 5 4 FEATURES BENEFITS


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    J/SST111 J/SST112 J/SST113 SST111 SST112 SST113 to-10 04-Jun-01 TO-236 MARKING CODE C3 J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix PDF

    motorola JFET 2N3819

    Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc


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    226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 motorola JFET 2N3819 BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819 PDF