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    J28CQ Search Results

    J28CQ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    J28CQ National Semiconductor 28 Lead Ceramic Dual-in-Line Package, EPROM Original PDF

    J28CQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J28CQ

    Abstract: No abstract text available
    Text: 28 Lead Ceramic Dual-in-Line Package EPROM NS Package Number J28CQ All dimensions are in inches millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL


    Original     		PDF J28CQ J28CQ

    27C010

    Abstract: 27C040 27C256 FM27C512 FM27C512Q
    Text: FM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The FM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while


    Original     		PDF FM27C512 288-Bit FM27C512 wait-st1793-856858 27C010 27C040 27C256 FM27C512Q

    27C080

    Abstract: 27C010 27C020 27C040 27C256 C1995 NM27P512 27C256 DIP
    Text: NM27P512 524 288-Bit 64K x 8 Processor Oriented CMOS EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM configured as 64k x 8 It’s designed to simplify microprocessor interfacing while remaining compatible with standard


    Original     		PDF NM27P512 288-Bit NM27P512 27C080 27C010 27C020 27C040 27C256 C1995 27C256 DIP

    transistor BC 458

    Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
    Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and


    Original     		PDF MS011795 transistor BC 458 transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE

    27lc64

    Abstract: 27lc512 NM27LC256 C1995 J28CQ NM27LC256Q250
    Text: NM27LC256 262 144-Bit 32k x 8 Low Current CMOS EPROM General Description Features The NM27LC256 is a 32k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NM27LC256 consumes a mere 17 5 mW (typical) making it ideal for battery powered portable and hand held systems and for systems using ‘‘in-line’’ power


    Original     		PDF NM27LC256 144-Bit NM27LC256 27lc64 27lc512 C1995 J28CQ NM27LC256Q250

    marking codes fairchild

    Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
    Text: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4


    Original     		PDF J24AQ J28AQ J28CQ J32AQ J40BQ MBS28A marking codes fairchild NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ

    b058

    Abstract: NM27C512 National Controls ne 545 27C010 27C020 27C040 27C080 27C256
    Text: NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while


    Original     		PDF NM27C512 288-Bit NM27C512 b058 National Controls ne 545 27C010 27C020 27C040 27C080 27C256

    27128 block diagram

    Abstract: 27C256 DIP 27C020 PLCC eprom 27c256 28 PIN DIP 150 NS 27C128 General Semiconductor 27C256 General Semiconductor 27C512 128K eprom 27C010 27C020
    Text: NM27C128 131 072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory It is manufactured with National’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as


    Original     		PDF NM27C128 072-Bit NM27C128 100ns 20-3A 27128 block diagram 27C256 DIP 27C020 PLCC eprom 27c256 28 PIN DIP 150 NS 27C128 General Semiconductor 27C256 General Semiconductor 27C512 128K eprom 27C010 27C020

    27128 eprom

    Abstract: 27C128 NM27C128 NM27C128QE 27128 memory 8F83
    Text: NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as


    Original     		PDF NM27C128 072-Bit NM27C128 27128 eprom 27C128 NM27C128QE 27128 memory 8F83

    27lc64

    Abstract: 27lC256 27LC010 national semiconductor 27lc256 NM27LC512 J28CQ MBH32A C1995
    Text: NM27LC512 524 288-Bit 64k x 8 Low Current CMOS EPROM General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NM27LC512 consumes a mere 30 mW making it ideal


    Original     		PDF NM27LC512 288-Bit NM27LC512 27lc64 27lC256 27LC010 national semiconductor 27lc256 J28CQ MBH32A C1995

    93c46ln

    Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
    Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .


    Original     		PDF MTC08 VBH48A VEH64A 93c46ln 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN

    ceramic package

    Abstract: CERDIP Package J08A J14A J16A J18A J20A J22A J24A J24AQ
    Text: Ceramic Dual-in-Line Package Cerdip 8 Lead Ceramic Dual-in-Line Package NS Package Number J08A 2000 National Semiconductor Corporation MS101109 www.national.com Ceramic Dual-in-Line Package (Cerdip) August 1999 Ceramic Dual-in-Line Package (Cerdip) 14 Lead Ceramic Dual-in-Line Package


    Original     		PDF MS101109 ceramic package CERDIP Package J08A J14A J16A J18A J20A J22A J24A J24AQ

    Untitled

    Abstract: No abstract text available
    Text: Package Outlines 28 Lead Ceramic Dual-in-Line Package Number J28CQ 1.465 0 . 7 6 - 1 .40 UV W IN D O W TYP 0.10 0 225 MAX TYP ( 5 .72 ) _ , r—(2.54) - i Glass Sealant * MAX 0 . 590 - 0.620 ( 14 . 9 9 - ( 15 .75 ) ( 1. 5 2 - 2 . 54 )


    OCR Scan     		PDF J28CQ

    27C020

    Abstract: 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512 NM27C128
    Text: tm NM27C12Ô 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read Only Memory. It is m anufactured with


    OCR Scan     		PDF NM27C128 072-Bit NM27C128 quick93-856856 27C020 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512

    NM27C128Q

    Abstract: No abstract text available
    Text: NM 27C 128 131,072-Bit 16K x 8 High P erform ance CM O S EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured with National’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as


    OCR Scan     		PDF 072-Bit NM27C128 100ns 20-3A NM27C128Q

    27C010

    Abstract: 27C020 27C040 27C080 27C128 27C256 27C512 NM27C128
    Text: NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C 128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with


    OCR Scan     		PDF NM27C128 072-Bit 27C010 27C020 27C040 27C080 27C128 27C256 27C512

    27C128 General Semiconductor

    Abstract: 27c128
    Text: NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with


    OCR Scan     		PDF NM27C128 072-Bit 27C128 27C128 General Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: I.465 MAX NOTES: UN LESS O T HERWISE S P ECIFIED 1. LEAD F I N I S H TO BE ONE OF THE FOLLOWING: a 200 M I C R O I N C H E S M I NIMUM S OLDER ME A S U R E D AT THE CREST OF THE MAJOR FLATS. b) 2 0 0 - 8 0 0 M I C R O I N C H E S TIN PLATE OVER 50-300 MICRO I N C H E S NICKEL UNDERPLATE


    OCR Scan     		PDF

    70.4 L marking

    Abstract: No abstract text available
    Text: Package Outlines Section 3 Contents Tape and R ee Part


    OCR Scan     		PDF J28CQ 32-Lead VA32A. 70.4 L marking

    EPROM 27c010

    Abstract: 27C010 27C020 27C040 27C080 27C256 A12C NM27C512
    Text: tm NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description T h e N M 2 7 C 5 1 2 is on e m e m b e r of a high d e n s ity E P R O M F a m ily w h ic h ra nge in d e n s itie s up to 4 M e gabit. T h e N M 2 7 C 5 1 2 is a high p e rfo rm a n c e 5 1 2 K U V E ra s a b le E le ctri­


    OCR Scan     		PDF NM27C512 288-Bit NM27C512 EPROM 27c010 27C010 27C020 27C040 27C080 27C256 A12C

    Fairchild TVR

    Abstract: J28C
    Text: NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. General Description The NM27C512 is a high performance 512K UV Erasable Electri­ cally Programmable Read Only Memory (EPROM). It is manufac­


    OCR Scan     		PDF NM27C512 288-Bit Fairchild TVR J28C

    27lC256

    Abstract: No abstract text available
    Text: June 1992 NM27LC64 65,536-Bit 8K x 8 Low Current CMOS EPROM General Description Features The NM27LC64 is a 8K x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current in both the active and standby modes. The NC27LC64 consumes a mere 12.5 mW (typical) in


    OCR Scan     		PDF NM27LC64 536-Bit NM27LC64 NC27LC64 S27-649 27lC256

    toilt

    Abstract: NM27P512 27c08
    Text: June 1992 NM27P512 524,288-Bit 64K x 8 Processor Oriented CMOS EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM con­ figured as 64k x 8. It’s designed to simplify microprocessor interfacing while remaining compatible with standard


    OCR Scan     		PDF NM27P512 288-Bit NM27P512 toilt 27c08

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TM NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is one member of a high density EPROM Family which range in densities up to 4 Mb. The NM27C128 is a high performance 128K UV Erasable Electri­ cally Programmable Read Only Memory. It is manufactured with


    OCR Scan     		PDF NM27C128 072-Bit NM27C128