Untitled
Abstract: No abstract text available
Text: MX25L2026E MX25L2026E DATASHEET P/N: PM1580 1 REV. 1.4, NOV. 14, 2013 MX25L2026E Contents FEATURES. 4
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MX25L2026E
PM1580
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Untitled
Abstract: No abstract text available
Text: MX25L6475E MX25L6475E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1831 1 REV. 1.1, NOV. 11, 2013 MX25L6475E Contents 1. FEATURES. 4
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MX25L6475E
PM1831
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Untitled
Abstract: No abstract text available
Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4
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MX25L1673E
PM1912
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8-USON
Abstract: No abstract text available
Text: MX25L512E MX25L512E DATASHEET P/N: PM1669 1 REV. 1.3, DEC. 10, 2013 MX25L512E Contents FEATURES. 4
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MX25L512E
PM1669
8-USON
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Serial Flash
Abstract: No abstract text available
Text: MX25L25735F MX25L25735F DATASHEET P/N: PM1799 MX25L25735F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6
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MX25L25735F
PM1799
Serial Flash
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MX25L12873F
Abstract: MXIC MX25l12873f
Text: MX25L12873F MX25L12873F DATASHEET P/N: PM1914 MX25L12873F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6
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MX25L12873F
PM1914
MX25L12873F
MXIC MX25l12873f
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Untitled
Abstract: No abstract text available
Text: MX25L12875F MX25L12875F DATASHEET P/N: PM1855 MX25L12875F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6
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MX25L12875F
PM1855
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IBM "embedded dram"
Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of
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conn95]
64-Mbit
Woo00]
EE380
class/ee380/
Wulf95]
Xanalys00]
Yabu99]
IBM "embedded dram"
m5m4v4169
Intel 1103 DRAM
Nintendo64
IBM98
toshiba fet databook
dynamic memory controler
MOSYS eDRAM
"1t-sram"
MoSys
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Untitled
Abstract: No abstract text available
Text: S25FL512S 512 Mbit 64 Mbyte MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O Data Sheet S25FL512S Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion®
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S25FL512S
S25FL512S
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JESD94
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
JESD94
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Untitled
Abstract: No abstract text available
Text: S25FL127S 128 Mbit 16 Mbyte MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O Data Sheet (Preliminary) S25FL127S Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion®
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S25FL127S
S25FL127S
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S25FL116K
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
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Untitled
Abstract: No abstract text available
Text: TMS320F28377D, TMS320F28376D www.ti.com SPRS880 – DECEMBER 2013 TMS320F2837xD Dual-Core Delfino Microcontrollers Check for Samples: TMS320F28377D, TMS320F28376D 1 TMS320F2837xD Dual-Core Delfino MCUs 1.1 Features • Dual-Core Architecture – Two TMS320C28x™ 32-Bit CPUs
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TMS320F28377D,
TMS320F28376D
SPRS880
TMS320F2837xD
TMS320C28xâ
32-Bit
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JESD216
Abstract: No abstract text available
Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial and Automotive Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S25FL116K
16-Mbit
S25FL116K
JESD216
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W25Q32FV
Abstract: 25Q32FV 25q32fvsig WINBOND 25Q32FVSIG 25Q32F W25Q32FVSSIG W25Q32FV application note W25Q32F W25Q32 25Q32fvsiq
Text: W25Q32FV 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: April 29, 2013 Revision G W25Q32FV Table of Contents 1. GENERAL DESCRIPTIONS. 5
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W25Q32FV
32M-BIT
208-mil
208-mil
W25Q32FV
25Q32FV
25q32fvsig
WINBOND 25Q32FVSIG
25Q32F
W25Q32FVSSIG
W25Q32FV application note
W25Q32F
W25Q32
25Q32fvsiq
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W25Q128FV
Abstract: winbond 25q128fvsg 25Q128fv 25q128fvsg 25Q128 25Q128FVFG w25q128bv W25Q128F 25Q128F W25Q128FVEIF
Text: W25Q128FV 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: April 29, 2013 Revision H W25Q128FV Table of Contents 1. GENERAL DESCRIPTIONS. 5
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W25Q128FV
128M-BIT
208-mil
W25Q128FV
winbond 25q128fvsg
25Q128fv
25q128fvsg
25Q128
25Q128FVFG
w25q128bv
W25Q128F
25Q128F
W25Q128FVEIF
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Untitled
Abstract: No abstract text available
Text: MX25U8033E MX25U8033E DATASHEET P/N: PM1718 1 REV. 1.7, JUL. 01, 2014 MX25U8033E Contents 1. FEATURES. 5
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MX25U8033E
MX25U8033E
PM1718
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Untitled
Abstract: No abstract text available
Text: Intel Solid-State Drive 520 Series Product Specification Capacity: 60/120/180/240/480 GB Components: — Intel® 25nm NAND Flash Memory — Multi-Level Cell MLC Form Factor: 2.5-inch Thickness: 7 mm and 9.5 mm
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512-byte
325968-001US
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command cathode 7 SEGMENT DISPLAY LT 543
Abstract: 82801IBM intel chipset 845 motherboard repair pml 003 am intel chipset 845 motherboard repair circuit 7 SEGMENT DISPLAY COMMON CATHODE lt 543 82801ibm ich9m PC MOTHERBOARD intel 845 circuit diagram mobile MOTHERBOARD CIRCUIT diagram ICH9
Text: Intel I/O Controller Hub 9 ICH9 Family Datasheet – For the Intel® 82801IB ICH9, 82801IR ICH9R, 82801IH ICH9DH, 82801IO ICH9DO, 82801IBM ICH9M and 82801IEM ICH9M-E, and ICH9M-SFF ICH9-I/O Controller Hubs August 2008 Document Number: 316972-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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82801IB
82801IR
82801IH
82801IO
82801IBM
82801IEM
command cathode 7 SEGMENT DISPLAY LT 543
intel chipset 845 motherboard repair
pml 003 am
intel chipset 845 motherboard repair circuit
7 SEGMENT DISPLAY COMMON CATHODE lt 543
82801ibm ich9m
PC MOTHERBOARD intel 845 circuit diagram
mobile MOTHERBOARD CIRCUIT diagram
ICH9
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sdram pcb layout gerber
Abstract: ddr sdram 128Mbit 8Mx16 pc133 sdram 512mb ECC unbuffered pc133 SDRAM DIMM PC133 SDRAM Unbuffered DIMM trace code micron label PC200U-25330B-1 JC42 sdram pc133 pcb layout guide micron sdram pc133 pcb layout guide
Text: DDR SDRAM Unbuffered DIMM Design Specification Revision 0.6 November 1999 JC-42.5 Item #:_ Prepared By Micron Technology and IBM DDR SDRAM Unbuffered DIMM Design Specification Page 2 Revision 0.6 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents
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JC-42
sdram pcb layout gerber
ddr sdram 128Mbit 8Mx16
pc133 sdram 512mb ECC unbuffered
pc133 SDRAM DIMM
PC133 SDRAM Unbuffered DIMM
trace code micron label
PC200U-25330B-1
JC42
sdram pc133 pcb layout guide
micron sdram pc133 pcb layout guide
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MT9HTF12872RHY-667E1
Abstract: JESD21-C JESD-21C MT9HTF12872RHY-667
Text: 512MB, 1GB x72, ECC, SR 200-Pin DDR2 SDRAM SORDIMM Features DDR2 SDRAM SORDIMM MT9HTF6472RH – 512MB MT9HTF12872RH – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small-outline registered dual in-line
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512MB,
200-Pin
MT9HTF6472RH
512MB
MT9HTF12872RH
200-pin,
PC2-4200,
PC2-5300,
PC2-6400
512MB
MT9HTF12872RHY-667E1
JESD21-C
JESD-21C
MT9HTF12872RHY-667
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MX25L6435
Abstract: MX25L6435EM2I-10G MX25L6435E MX25L6435EZ MX25L64 MX25L6435EZNI MX25L6435EZNI-10G
Text: MX25L6435E MX25L6435E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1784 1 REV. 1.0, SEP. 06, 2012 MX25L6435E Contents 1. FEATURES. 4
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MX25L6435E
PM1784
MX25L6435
MX25L6435EM2I-10G
MX25L6435E
MX25L6435EZ
MX25L64
MX25L6435EZNI
MX25L6435EZNI-10G
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JESD-21C
Abstract: No abstract text available
Text: PC1600 and PC2100 DDR SDRAM Unbuffered DIMM Design Specification Revision 1.1 October 15, 2001 Table of Contents PC1600/PC2100 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents Table of Contents .2
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PC1600
PC2100
PC1600/PC2100
JC-42
JESD-21C
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JESD21-C
Abstract: JESD-21C MT9HTF12872CHY-800
Text: 512MB, 1GB x72, ECC, SR 200-Pin DDR2 SDRAM SOCDIMM Features DDR2 SDRAM SOCDIMM MT9HTF6472CH – 512MB MT9HTF12872CH – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small-outline clocked dual in-line memory
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512MB,
200-Pin
MT9HTF6472CH
512MB
MT9HTF12872CH
200-pin,
PC2-4200,
PC2-5300,
PC2-6400
512MB
JESD21-C
JESD-21C
MT9HTF12872CHY-800
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