W29GL256P
Abstract: W29GL256
Text: W29GL256P 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE W29GL256P Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1 FEATURES . 1
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W29GL256P
256M-BIT
W29GL256P
W29GL256
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MX29LV640ebt
Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
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MX29LV640E
64M-BIT
128-word
MX29LV640ebt
MX29LV640EB
MX29LV640EBTI-70G
29LV640
mx29lv640etti
MX29LV640ETTI-70G
A0-A21
Q0-Q15
PM-132
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JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
PC28F00AM29EWHA
11-Apr-2011
JS28F512M29
js28f256m29
js28f256
JS28F512
pc28f00am29ew
JS28F00AM29EW
pc28f00am29
js28f00
PC28F00AM29EWHA
JS28F256M29EWL
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pc28f128p33b
Abstract: PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 P33-65nm RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T
Text: Numonyx AxcellTM P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features High performance: — 60ns initial access time for Easy BGA — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read
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P33-65nm
128-Mbit,
64-Mbit
52MHz
256-word
32-KByte
128-KByte
P33-65nm
40Mhz
pc28f128p33b
PC28F128P33
JS28F128P33BF
js28f640p33
pc28f128p33bf60
RC28F128P33
JS28F128P33TF70
JS28F128P33
PC28F128P33T
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pc28f00ap33
Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
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P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
pc28f00ap33
JS28F00AP33BF
JS28F512P33BF
PC28F00BP33EF
PC28F00BP33
JS28F512P33EF
PC28F512P33
JS28F512P33
PC28F00AP33EF
JS28F512
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MX29LV320DT
Abstract: MX29LV320DB MX29LV320DBTI-70G MX29LV320DBTI MX29LV320DTTI-70G MX29LV320D 29LV320 3F000Fh mx29lv320dbxbi-70g MX29LV320DTTI
Text: MX29LV320D T/B MX29LV320D T/B DATASHEET P/N:PM1281 REV. 1.2, OCT. 02, 2009 1 MX29LV320D T/B Contents FEATURES. 5
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MX29LV320D
PM1281
MX29LV320DT
MX29LV320DB
MX29LV320DBTI-70G
MX29LV320DBTI
MX29LV320DTTI-70G
29LV320
3F000Fh
mx29lv320dbxbi-70g
MX29LV320DTTI
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PM1551
Abstract: MX25L8035E mx25l8035 MX25L8035EM2I-10G MX25L8035EM2I tvr 10g IN3064 25L8035E
Text: MX25L8035E MX25L8035E DATASHEET P/N: PM1551 1 REV. 1.0, OCT. 06, 2009 MX25L8035E Contents FEATURES. 5
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MX25L8035E
PM1551
PM1551
MX25L8035E
mx25l8035
MX25L8035EM2I-10G
MX25L8035EM2I
tvr 10g
IN3064
25L8035E
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25l1605
Abstract: 25l1605d mx25l1605dm2i MX25l3205dm2i-12g MX25L1605DM2I-12g 25L160 MX25L6405D MX25L3205D MX25L6405DMI-12G MX25L1615D
Text: PRELIMINARY MX25L1605D MX25L3205D MX25L6405D 16M-BIT [x 1 / x 2] CMOS SERIAL FLASH 32M-BIT [x 1 / x 2] CMOS SERIAL FLASH 64M-BIT [x 1 / x 2] CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface compatible - Mode 0 and Mode 3 • 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits two I/O read mode structure
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MX25L1605D
MX25L3205D
MX25L6405D
16M-BIT
32M-BIT
64M-BIT
25l1605
25l1605d
mx25l1605dm2i
MX25l3205dm2i-12g
MX25L1605DM2I-12g
25L160
MX25L6405D
MX25L3205D
MX25L6405DMI-12G
MX25L1615D
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MX29LV640DT
Abstract: MX29LV640 MX29LV640DBTC MX29LV640DBTC-90G A0-A21 MX29LV640D Q0-Q15 29lv640
Text: MX29LV640D T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
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MX29LV640D
64M-BIT
128-word
MX29LV640DT
MX29LV640
MX29LV640DBTC
MX29LV640DBTC-90G
A0-A21
Q0-Q15
29lv640
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W29GL064C
Abstract: No abstract text available
Text: W29GL064C 64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE Publication Release Date: October 18, 2011 Preliminary - Revision E BLANK W29GL064C Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1
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W29GL064C
64M-BIT
W29GL064C
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KH29LV320
Abstract: KH29LV320D KH29LV320DBTC
Text: ADVANCED INFORMATION KH29LV320D T/B KH29LV320D T/B DATASHEET P/N:PM1398 REV. 0.01, MAY 20, 2008 1 KH29LV320D T/B Contents FEATURES .
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KH29LV320D
PM1398
KH29LV320
KH29LV320DBTC
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Untitled
Abstract: No abstract text available
Text: MX29LA640E H/L 64M-BIT [4M x 16/8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8M Bytes/4M Words switchable • 128 Equal Sectors with 64K Bytes 32K words each - Any combination of sectors can be erased with erase suspend/resume function
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MX29LA640E
64M-BIT
16/8M
100mA
11us/word
45s/chip
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mx29lv320db
Abstract: No abstract text available
Text: MX29LV320D T/B MX29LV320D T/B DATASHEET P/N:PM1281 REV. 1.0, AUG. 14, 2008 1 MX29LV320D T/B Contents FEATURES . 5
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MX29LV320D
PM1281
mx29lv320db
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SA206
Abstract: MX29GA129E
Text: MX29GA129E C/F MX29GA257E C/F MX29GA129/257E C/F DATASHEET P/N:PM1503 REV. 0.01, AUG. 10, 2009 1 ADVANCED INFORMATION MX29GA129E C/F MX29GA257E C/F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GA129E
MX29GA257E
MX29GA129/257E
PM1503
32-word
100mA
SA206
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MX25L3206
Abstract: MX25L3206E MAR 03 25l3206e
Text: MX25L3206E MX25L3206E DATASHEET P/N: PM1568 1 REV. 0.00, MAR. 17, 2010 MX25L3206E Contents FEATURES. 5
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MX25L3206E
MX25L3206E
PM1568
MX25L3206
MAR 03
25l3206e
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MX29LV161D
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29LV161D T/B 16M-BIT [1M x 16] 3V SUPPLY FLASH MEMORY MX29LV161D T/B DATASHEET P/N:PM1359 REV. 0.09, JUL. 29, 2008 1 ADVANCED INFORMATION MX29LV161D T/B Contents FEATURES . 5
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MX29LV161D
16M-BIT
PM1359
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xxx00F
Abstract: MX25L1635E
Text: MX25L1635E MX25L1635E DATASHEET P/N: PM1553 1 REV. 1.4, MAR. 19, 2012 MX25L1635E Content FEATURES. 5
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MX25L1635E
MX25L1635E
PM1553
xxx00F
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Untitled
Abstract: No abstract text available
Text: MX29LV640D T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
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MX29LV640D
64M-BIT
128-word
100mA
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MX25L8035E
Abstract: PM1551
Text: MX25L8035E MX25L8035E DATASHEET P/N: PM1551 1 REV. 1.1, JUN. 13, 2012 MX25L8035E Contents FEATURES. 5
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MX25L8035E
MX25L8035E
PM1551
PM1551
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mx29lv160dtti
Abstract: MX29LV160DBTI-70G MX29LV160DTXBI MX29LV160D
Text: MX29LV160D T/B 16M-BIT [2M x 8 / 1M x 16] 3V SUPPLY FLASH MEMORY MX29LV160D T/B DATASHEET P/N:PM1315 REV. 1.0, AUG. 11, 2008 1 MX29LV160D T/B Contents FEATURES . 5
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MX29LV160D
16M-BIT
PM1315
mx29lv160dtti
MX29LV160DBTI-70G
MX29LV160DTXBI
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Untitled
Abstract: No abstract text available
Text: MX25L1605D MX25L3205D MX25L6405D 16M-BIT [x 1 / x 2] CMOS SERIAL FLASH 32M-BIT [x 1 / x 2] CMOS SERIAL FLASH 64M-BIT [x 1 / x 2] CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface compatible - Mode 0 and Mode 3 • 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits two I/O read mode structure
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MX25L1605D
MX25L3205D
MX25L6405D
16M-BIT
32M-BIT
64M-BIT
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Untitled
Abstract: No abstract text available
Text: MX29LV640D T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
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MX29LV640D
64M-BIT
128-word
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RC28F256P33BF
Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
Text: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,
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P33-65nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KBcument;
RC28F256P33BF
JS28F256P33
PC28F256P33
pc28F256P33T
RC28F256P33TF
JS28F256P33BF
PC28F256P33TF
pc28f256p33b
PC28F256P33BF
PC48F4400P0TB0E
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MX29GA257F
Abstract: MX29GA256F JESD47E Q0-Q15 MX29GA MX29GA256FL MXIC MX MX29GA257 MX29GA256F/MX29GA257F
Text: MX29GA256F H/L MX29GA257F H/L MX29GA256F/MX29GA257F DATASHEET P/N:PM1649 REV. 1.0, AUG. 08, 2011 1 MX29GA256F H/L MX29GA257F H/L Contents FEATURES. 5
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MX29GA256F
MX29GA257F
MX29GA256F/MX29GA257F
PM1649
JESD47E
Q0-Q15
MX29GA
MX29GA256FL
MXIC MX
MX29GA257
MX29GA256F/MX29GA257F
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