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    JFET DISCRETE DIFFERENTIAL TRANSISTOR Search Results

    JFET DISCRETE DIFFERENTIAL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    JFET DISCRETE DIFFERENTIAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    n-channel jfet amplitude control

    Abstract: philips jfet complementary JFET design ideas 2n5484 jfet P-Channel Depletion Mode Field Effect Transistor small signal amplifier JFET Ideas for Design P-Channel JFET jfet philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Ideas for design Small-signal Field-effect Transistors Product specification Supersedes data of 1995 Apr 28 File under Discrete Semiconductors, SC07 1997 Oct 28 Philips Semiconductors Product specification Small-signal Field-effect Transistors


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    2N5484 MGC457 MGC455 n-channel jfet amplitude control philips jfet complementary JFET design ideas 2n5484 jfet P-Channel Depletion Mode Field Effect Transistor small signal amplifier JFET Ideas for Design P-Channel JFET jfet philips PDF

    norton amplifier

    Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
    Text: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output


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    AN-278 norton amplifier LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode PDF

    SJEP120R125

    Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
    Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2


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    Instrumentation Amplifier lt1167

    Abstract: 1167-01 LT1167 LT1112 LT1114 LT1114C LT1167C LTC1286 LTC1400 ltc1515
    Text: DESIGN FEATURES The LT1167: Precision, Low Cost, Low Power Instrumentation Amplifier Requires a Single Gain-Set Resistor by Alexander Strong Introduction Input Protection The LT1167 is the next-generation instrumentation amplifier designed to replace the previous generation of


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    LT1167 LT1167, LT1112 V/50mA Instrumentation Amplifier lt1167 1167-01 LT1112 LT1114 LT1114C LT1167C LTC1286 LTC1400 ltc1515 PDF

    TRANSISTORS BJT list

    Abstract: bjt differential amplifier bjt differential amplifier application circuits BJT amplifiers input output bjt npn transistor pnp germanium low power bjt pnp germanium bjt jfet discrete differential transistor pnp germanium small signal bjt power BJT PNP
    Text: Application Report SLOA026A - April 2000 Understanding Basic Analog – Active Devices Ron Mancini Mixed Signal Products ABSTRACT This application report describes active devices and their use as the basic building blocks of all electronic equipment. Active devices, coupled with passive devices, create the


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    SLOA026A TRANSISTORS BJT list bjt differential amplifier bjt differential amplifier application circuits BJT amplifiers input output bjt npn transistor pnp germanium low power bjt pnp germanium bjt jfet discrete differential transistor pnp germanium small signal bjt power BJT PNP PDF

    TRANSISTORS BJT list

    Abstract: "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP pnp germanium low power bjt
    Text: Understanding Basic Analog - Active Devices Application Report July 1999 Mixed Signal Products SLOA026 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


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    SLOA026 TRANSISTORS BJT list "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP pnp germanium low power bjt PDF

    norton amplifier

    Abstract: LM3900 VCO high end amplifier schematics operational amplifier discrete schematic LM359 IC LM331 jfet cascode LM331 common base amplifier circuit designing norton op. amp
    Text: WHY ANOTHER NORTON AMPLIFIER? The current differencing Norton amplifier has been widely applied over the last 5 years because of the versatility and availability of quad Norton amplifiers the LM3900 . These low cost quads are found today in a wide variety of analog


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    LM3900) LM359, an007490 norton amplifier LM3900 VCO high end amplifier schematics operational amplifier discrete schematic LM359 IC LM331 jfet cascode LM331 common base amplifier circuit designing norton op. amp PDF

    ic 7490

    Abstract: internal structure of 7490 IC function of ic 7490 ci 7490 of 7490 IC Datasheet of 7490 IC of IC 7490 DIGITAL IC 7490 7490 application of 7490
    Text: National Semiconductor Application Note 278 Timothy T Regan September 1981 WHY ANOTHER NORTON AMPLIFIER The current differencing Norton amplifier has been widely applied over the last 5 years because of the versatility and availability of quad Norton amplifiers the LM3900 These


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    LM3900) LM359 ic 7490 internal structure of 7490 IC function of ic 7490 ci 7490 of 7490 IC Datasheet of 7490 IC of IC 7490 DIGITAL IC 7490 7490 application of 7490 PDF

    MAX4005

    Abstract: 950-MHz MAX4005CSA
    Text: 19-0315; Rev 0; 10/94 950MHz FET-Input Buffer with 75Ω Output The MAX4005 is a ±5V, single-ended unity-gain buffer with a high-impedance JFET input, intended to drive a 75Ω load. A 75Ω thin-film output resistor is included onboard to minimize reflections when driving a 75Ω load


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    950MHz MAX4005 350ps 200MHz 500MHz 950-MHz MAX4005CSA PDF

    Untitled

    Abstract: No abstract text available
    Text: a Dual Audio Analog Switches SSM2402/SSM2412 FUNCTIONAL BLOCK DIAGRAM TE FEATURES “Clickless” Bilateral Audio Switching Guaranteed “Break-Before-Make” Switching Low Distortion: 0.003% typ Low Noise: 1 nV/√Hz Superb OFF-Isolation: 120 dB typ Low ON-Resistance: 60 ⍀ typ


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    SSM2402/SSM2412 SSM2402/SSM2412 SSM2402/ SSM2412 16-Pin PDF

    SSM2015

    Abstract: SSM2402 SSM2412S SSM2412 SSM2134 SSM2402P SSM2402S SSM2412P
    Text: a FEATURES “Clickless” Bilateral Audio Switching Guaranteed “Break-Before-Make” Switching Low Distortion: 0.003% typ Low Noise: 1 nV/√Hz Superb OFF-Isolation: 120 dB typ Low ON-Resistance: 60 ⍀ typ Wide Signal Range: VS = ؎18 V; 10 V rms Wide Power Supply Range: ؎20 V max


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    SSM2402/SSM2412 SSM2402/SSM2412 SSM2402/ SSM2412 16-Pin SSM2015 SSM2402 SSM2412S SSM2134 SSM2402P SSM2402S SSM2412P PDF

    SSM2015

    Abstract: SSM-2015 ramp signaL
    Text: a Dual Audio Analog Switches SSM2402/SSM2412 FEATURES “Clickless” Bilateral Audio Switching Guaranteed “Break-Before-Make” Switching Low Distortion: 0.003% typ Low Noise: 1 nV/√Hz Superb OFF-Isolation: 120 dB typ Low ON-Resistance: 60 ⍀ typ Wide Signal Range: VS = ؎18 V; 10 V rms


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    SSM2402/SSM2412 SSM2402/SSM2412 SSM2402/ SSM2412 16-Pin SSM2015 SSM-2015 ramp signaL PDF

    ssm2412

    Abstract: SSM2402P
    Text: BACK a FEATURES “Clickless” Bilateral Audio Switching Guaranteed “Break-Before-Make” Switching Low Distortion: 0.003% typ Low Noise: 1 nV/√Hz Superb OFF-Isolation: 120 dB typ Low ON-Resistance: 60 ⍀ typ Wide Signal Range: VS = ؎18 V; 10 V rms


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    SSM2402/SSM2412 SSM2402/SSM2412 SSM2402/ SSM2412 16-Pin SSM2402P PDF

    TLV2426

    Abstract: op amp cookbook MMBT2222 OPA364 "Texas instruments" transistor 2N3329 2N3955 2N6804 Stone Soup IRFU9120
    Text: Op Amp Stone Soup A “Cookbook” Collection of Single Supply Op Amp Circuits Tim Green Linear Applications Manager Tucson Division green_tim@ti.com Op Amp Stone Soup: This presentation will offer a "Stone Soup" collection of useful op amp circuits to solve linear application problems on a daily basis. Each op amp circuit pre-built in


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    my/fkee/BEE2213 20AND 20BEP 20notes/ 20FET HCNR200/HCNR201 TLV2426 op amp cookbook MMBT2222 OPA364 "Texas instruments" transistor 2N3329 2N3955 2N6804 Stone Soup IRFU9120 PDF

    amelco

    Abstract: No abstract text available
    Text: LS3954A LS3954 LS3955 LS3956 LS3958 LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. LOW LEAKAGE IG=20pA TYP. en=10Nv/√Hz TYP. LOW NOISE ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C unless otherwise noted Maximum Temperatures


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    LS3954A LS3954 LS3955 LS3956 LS3958 10Nv/â 400mW 25-year-old, amelco PDF

    ultra low igss pA

    Abstract: No abstract text available
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1


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    LS830 LS831 LS832 LS833 70nV/â 25-year-old, ultra low igss pA PDF

    Current limiting diodes

    Abstract: staircase generator circuit PCI9030 N-Channel jfet 100V depletion CCLH080 CCLH150 ccl0035-ccl5750
    Text: 49 Semiconductor Practical Applications of Current Limiting Diodes Edited by Aimee Kalnoskas, Editor-In-Chief by Sze Chin, Central Semiconductor Corp. he current limiting diode CLD or current regulating diode (CRD) has been available since the early 1960’s. Unfortunately, despite its simplicity and distinct advantages over conventional


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    SHC5320 Current limiting diodes staircase generator circuit PCI9030 N-Channel jfet 100V depletion CCLH080 CCLH150 ccl0035-ccl5750 PDF

    volterra

    Abstract: VT223 volterra vt223 VOLTERRA SEMICONDUCTOR VOLTERRA VT VT223C-ADJ volterra regulator VT223-ADJ P-Channel Depletion Mosfets vishay 0805 SMD resistors
    Text: Application Note 35 Lossless Tracking Procedure and Results Summary Reference Design: Volterra VT223 Regulator and SMT4214 TRAKKERTM BACKGROUND Typical Supply Voltage Tracking As discussed in AN-26, Summit Microelectronic’s SMT4004 also performs low level, loss-less supply


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    VT223 SMT4214 AN-26, SMT4004 VT223C-ADJ SMT4214 volterra volterra vt223 VOLTERRA SEMICONDUCTOR VOLTERRA VT VT223C-ADJ volterra regulator VT223-ADJ P-Channel Depletion Mosfets vishay 0805 SMD resistors PDF

    Untitled

    Abstract: No abstract text available
    Text: a FEATURES “Clickless” Bilateral Audio Sw itching Guaranteed “Break-Before-M ake” Sw itching Low Distortion: 0.003% typ Low Noise: 1 nV/ √Hz Superb OFF-Isolation: 120 dB typ Low ON-Resistance: 60 ⍀ typ Wide Signal Range: V S = ؎18 V; 10 V rms


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    SSM2402/SSM2412 SSM2402/SSM2412 SSM2412 expensi015 PDF

    npn transistor w19

    Abstract: w19 transistor
    Text: U h # HARRIS HTA2000 SEMICONDUCTOR • RCA • GE • INTERSIL VHF Tile Array June 1990 Advance Information Features Overview • Supported on Harris Bipolar Analog FASTRACK Design System The Harris HTA2000 Tile Array provides the analog system designer with a fast turn, low cost tile array methodology for


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    HTA2000 HTA2000 npn transistor w19 w19 transistor PDF

    mu24 dc

    Abstract: SWT-2
    Text: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration


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    r88uct RFA120 mu24 dc SWT-2 PDF

    jfet discrete differential transistor

    Abstract: AD811AN AD744 AD743 AD811 AN-232 matched pair JFET
    Text: ANALOG ► DEVICES AN-232 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Bootstrapped IC Substrate Lowers Distortion in JFET Op Amps by Walt Jung INTRODUCTION Am ong the more popular IC op amps used today are


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    AN-232 AD743 AD744 jfet discrete differential transistor AD811AN AD811 matched pair JFET PDF

    jfet discrete differential transistor

    Abstract: AD744 AD743 AD811 AD811AN AN-232 jfet differential transistor matched pair JFET P-Channel JFET Amplifier
    Text: lA ANALOG DEVICES An-232 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062*9106 • 617/329-4700 Bootstrapped IC Substrate Lowers Distortion in JFET Op Amps by Walt Jung INTRODUCTION Am ong the more popular IC op amps used today are


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    AN-232 AD743 AD744 jfet discrete differential transistor AD811 AD811AN jfet differential transistor matched pair JFET P-Channel JFET Amplifier PDF

    PMI SSM2402

    Abstract: ssm pmi 18vdc power supply
    Text: PMÌ SSM-2402/SSM-2412 A * 5 ? DUAL AUDIO ANALOG SWITCHES DBBBBBOBBBD FEATURES new circuit topology that optimizes audio performance, the SSM-2402/2412 make use of a proprietary bipolar-JFET proc­ ess with thin-film resistor network capability. Nitride capacitors,


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    SSM-2402/SSM-2412 SSM-2402/2412 10Vfrequency, SSM-2402 20kHz) 20kHz, 24dBu) PMI SSM2402 ssm pmi 18vdc power supply PDF