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    JFET TRANSISTOR N-CHANNEL TO 92 Search Results

    JFET TRANSISTOR N-CHANNEL TO 92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    JFET TRANSISTOR N-CHANNEL TO 92 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J310

    Abstract: Transistor J310 J310 equivalent U310 J309 13000 BR transistor transistor u310 U309 N-Channel JFET transistor j309 transistor
    Text: U309/J309/MMBFJ309/U310/J310/MMBFJ310 National Æ Â Semiconductor U309 U310 J309 J310 MMBFJ309 MMBFJ310 /V s U T L /G /1 0 1 0 0 -9 TO-236 SOT-23 TO*M T L/G /10100 -6 G T L /G /1 0 1 0 0 -2 N-Channel JFET Transistor for RF Amplifiers Electrical Characteristics t a


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    U309/J309/MMBFJ309/U310/J310/MMBFJ310 MMBFJ309 MMBFJ310 J310 Transistor J310 J310 equivalent U310 J309 13000 BR transistor transistor u310 U309 N-Channel JFET transistor j309 transistor PDF

    transistor j511

    Abstract: ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode
    Text: J500 SERIES CURRENT REGULATING DIODES Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V A A K K 1 ABSOLUTE MAXIMUM RATINGS TO-92 BOTTOM VIEW @ 25 °C unless otherwise stated


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    360mW transistor j511 ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode PDF

    ultra low igss pA mosfet

    Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


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    100pA 360mW ultra low igss pA mosfet ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent PDF

    P-Channel MOSFET 12V SOT 23

    Abstract: LS-31 ultra FAST DMOS FET Switches jfet to 92
    Text: J/SST111 SERIES SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated J SERIES SST SERIES TO-92


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    J/SST111 360mW 350mW OT-23 P-Channel MOSFET 12V SOT 23 LS-31 ultra FAST DMOS FET Switches jfet to 92 PDF

    FET U310

    Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
    Text: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW


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    U/J/SST308 350mW 500mW OT-23 FET U310 U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET PDF

    Untitled

    Abstract: No abstract text available
    Text: The Leader in High Temperature Semiconductor Solutions CHT-ATLAS Version: 3.4 12-Nov-13 Last Modification Date Dual Channel Power Transistor Driver General description Features CHT-ATLAS is a high-temperature, high reliability power transistor driver integrated


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    12-Nov-13 DS-100781 PDF

    transistor 2N3819

    Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION


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    2N3819 J-FET-2N3819 transistor 2N3819 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819 PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 PDF

    NTE7232

    Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
    Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case


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    NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A PDF

    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


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    SiC JFET

    Abstract: normally off sic jfet silicon carbide j-fet SOIC28 RD11 RD12 RD22 NMOS4005 ac-dc wind turbine control silicon carbide JFET normally on
    Text: The Leader in High Temperature Semiconductor Solutions CHT-THEMIS/CHT-ATLAS Version: 1.4 17-Feb-11 Last Modification Date PRELIMINARY DATASHEET Driver Chipset for SiC and Si Power Switches High Reliability, High Temperature Capable General description Features


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    17-Feb-11 DS-100759 SiC JFET normally off sic jfet silicon carbide j-fet SOIC28 RD11 RD12 RD22 NMOS4005 ac-dc wind turbine control silicon carbide JFET normally on PDF

    MPS 0715

    Abstract: 2N5358 10MF 2N2222 MPQ2001 FET small signal transistors motorola 2N2222 npn small signal current gain 2N2222 transistor 2n2222 mps 2N2222 motorola
    Text: Order this document by MPQ2001/D MOTOROLA MPQ2001 Semiconductors BOX 2 0912 • P H O E N IX , A R IZ O N A 85036 Advance Inform ation 2 - NPN SILICON BIPOLAR 2 -N-CHANNEL J-FET QUAD TRANSISTORS SILICON ANNULAR* NPN BIPOLAR, N-CHANNEL J-FET QUAD TRANSISTOR


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    MPQ2001/D MPQ2001 2N2222 2N5358 MPQ2001/D MPS 0715 2N5358 10MF 2N2222 MPQ2001 FET small signal transistors motorola 2N2222 npn small signal current gain 2N2222 transistor 2n2222 mps 2N2222 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with


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    PDF

    IJW120R070T1

    Abstract: IJW120R silicon carbide
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description


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    IJW120R070T1 IJW120R070T1 IJW120R silicon carbide PDF

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


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    K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686 PDF

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 PDF

    CH-8712

    Abstract: STAEFA eltec
    Text: Model 479 Twin Channel Optically Isolated Pyroelectric IR Detector with Source Follower Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 479 contains two lithium tantalate sensing elements and two JFET source followers sealed into a standard TO-5


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    479M1 CH-8712 STAEFA eltec PDF

    mosfet nepi

    Abstract: Planar gAte Power MOSFET Wafer MOSFET cross
    Text: Siliconix Technology Backgrounder: TrenchFETt Power MOSFETs TrenchFETs from Siliconix offer greatly reduced on-resistance compared with any other power MOSFETs in the same package size. The result of many years of development, TrenchFETs offer unparalleled performance in applications from automotive airbags to uninterruptible power


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    O-220 32-bit mosfet nepi Planar gAte Power MOSFET Wafer MOSFET cross PDF

    diode Kl04

    Abstract: No abstract text available
    Text: P H I L IP S E C G INC 17 E ECG Sem iconductors 0 • ^ 53=123 000503 A 1 ■ 7 '- ^ / - / / ECG861 Quad Single Pole Analog Sw Features • Analog signals are not loaded • Constant "ON" resistance for signals up to ±10 V and 100 kHz • Small signal analog signals to 50 MHz


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    ECG861 0S047 ECG861 diode Kl04 PDF

    Untitled

    Abstract: No abstract text available
    Text: UCC2891, UCC2892 UCC2893, UCC2894 ą SLUS542F − OCTOBER 2003 − REVISED JULY 2009 CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Low Output Jitter D Soft−Stop Shutdown of MAIN and AUX D Ideal for Active Clamp/Reset Forward, D D D D D D D D D DESCRIPTION


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    UCC2891, UCC2892 UCC2893, UCC2894 SLUS542F UCC2891/2/3/4 UCC2891/3 PDF

    700w audio amplifier circuit diagram

    Abstract: design of mosfet based power supply UCC2894 zvs flyback driver interleave flyback controller UCC3580 UCC3580EVM UCC2891 UCC2892 UCC2893 UCC2894
    Text: UCC2891, UCC2892 UCC2893, UCC2894 ą SLUS542F − OCTOBER 2003 − REVISED JULY 2009 CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Low Output Jitter D Soft−Stop Shutdown of MAIN and AUX D Ideal for Active Clamp/Reset Forward, D D D D D D D D D DESCRIPTION


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    UCC2891, UCC2892 UCC2893, UCC2894 SLUS542F UCC2891/2/3/4 UCC2891/3 700w audio amplifier circuit diagram design of mosfet based power supply UCC2894 zvs flyback driver interleave flyback controller UCC3580 UCC3580EVM UCC2891 UCC2892 UCC2893 UCC2894 PDF

    gate drive circuit for interleaved active clamp flyback forward converter

    Abstract: 48V 100w SMPS forward smps circuit diagram of 150W step down
    Text: UCC2891, UCC2892 UCC2893, UCC2894 ą SLUS542F − OCTOBER 2003 − REVISED JULY 2009 CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Low Output Jitter D Soft−Stop Shutdown of MAIN and AUX D Ideal for Active Clamp/Reset Forward, D D D D D D D D D DESCRIPTION


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    UCC2891, UCC2892 UCC2893, UCC2894 SLUS542F UCC2891/3 UCC2891/2/3/4 gate drive circuit for interleaved active clamp flyback forward converter 48V 100w SMPS forward smps circuit diagram of 150W step down PDF

    Untitled

    Abstract: No abstract text available
    Text: UCC2891, UCC2892 UCC2893, UCC2894 ą SLUS542F − OCTOBER 2003 − REVISED JULY 2009 CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Low Output Jitter D Soft−Stop Shutdown of MAIN and AUX D Ideal for Active Clamp/Reset Forward, D D D D D D D D D DESCRIPTION


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    UCC2891, UCC2892 UCC2893, UCC2894 SLUS542F UCC2891/3 UCC2891/2/3/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: UCC2891, UCC2892 UCC2893, UCC2894 ą SLUS542F − OCTOBER 2003 − REVISED JULY 2009 CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Low Output Jitter D Soft−Stop Shutdown of MAIN and AUX D Ideal for Active Clamp/Reset Forward, D D D D D D D D D DESCRIPTION


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    UCC2891, UCC2892 UCC2893, UCC2894 SLUS542F UCC2891/2/3/4 UCC2891/3 PDF