Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JFETS JUNCTION FETS Search Results

    JFETS JUNCTION FETS Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    AD8510ARZ-REEL Analog Devices PRECISION LOW NOISE JFET AMPLI Visit Analog Devices Buy
    AD8512ARZ-REEL Analog Devices PRECISION LOW NOISE JFET AMPLI Visit Analog Devices Buy
    AD8684ARZ-REEL Analog Devices Quad Low Power JFet AMP Visit Analog Devices Buy

    JFETS JUNCTION FETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet

    P-Channel Depletion Mosfets

    Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor

    MP833

    Abstract: e201 siliconix MPF4118 MPF4117 INTERFET SMP4117 TP3370 MP830 SMP3370 TP4119
    Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 9t. VGS(Off) Max loss Max CI. Max PD Max (V) (A) Min (S) Max (V) (A) (F) (W) Derate at (WrC) Tope, Max (OC) Package Style N-Chann I JFETs, (Cont'd) 5 10 MPF4117A PN4117 PN4117A PN4117A PN4117A


    Original     		PDF MPF4117A PN4117 PN4117A SMP4117 TMPF4117 TP4117 2N4117 MP833 e201 siliconix MPF4118 MPF4117 INTERFET TP3370 MP830 SMP3370 TP4119

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404

    transistor 2n5088 equivalent

    Abstract: transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet"
    Text: AN106 Siliconix LowĆNoise JFETs Ċ Superior Performance to Bipolars Introduction D Junction field effect transistors continue to outperform the best bipolar transistors on lowĆfrequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 transistor 2n5088 equivalent transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet"

    2N5088 equivalent

    Abstract: siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393

    transistor fn 1016

    Abstract: N CHANNEL jfet Low Noise Audio Amplifier siliconix fet JFET APPLICATIONS JFETs Junction FETs Siliconix AN106 jfets 2N4393 2N5088 equivalent jfet to 92
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		PDF AN106 transistor fn 1016 N CHANNEL jfet Low Noise Audio Amplifier siliconix fet JFET APPLICATIONS JFETs Junction FETs Siliconix AN106 jfets 2N4393 2N5088 equivalent jfet to 92

    J300D

    Abstract: E212 siliconix MP5912 GAA 645 BF246A
    Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) gf. Min (S) Max VGS(Off) Max (V) IGSS Max (A) CI. Max (F) PD Max (W) Derate at Toper (WrC) JOC) Max Package Style N-Channel JFETs, (ContI d) 5 10 15 20 J109•18 MFE2011 MFE2011 TPJ109


    Original     		PDF MFE2011 TPJ109 PN5163 SMP5163 TMPF5163 TP5163 MP5912 J300D E212 siliconix GAA 645 BF246A

    Motorola MPF105

    Abstract: E309 2N5459 MOTOROLA BF244SM U316 Y300C PN5434 72 sot 23 310M TP5105
    Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 9t. (V) (A) Min (S) Max VGS(off) Max (V) IGSS Max (A) C'n Max (F) Po Max (W) Derate at (WrC) TOper Max (OC) Package Style N-Channel JFETs, (Cont'd) 5 10 SMPJ210 TMPFJ210 J300B J300B J300B SMPJ300B


    Original     		PDF SMPJ210 TMPFJ210 J300B SMPJ300B TMPFJ300B SMP5105 TMPF5105 TP5105 Motorola MPF105 E309 2N5459 MOTOROLA BF244SM U316 Y300C PN5434 72 sot 23 310M

    p channel depletion mosfet

    Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
    Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the


    Original     		PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets

    P-Channel Depletion Mode FET

    Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
    Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic


    Original     		PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion

    fet vcr compatible

    Abstract: application note jfet J111 transistor jfet transistor for VCR VCR2N VCR4N 2N5486 AN105 J111 PN4119A SST111
    Text: AN105 FETs As VoltageĆControlled Resistors Introduction: The Nature of VCRs A voltageĆcontrolled resistor VCR may be defined as a threeĆterminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.


    Original     		PDF AN105 11-Jul-94 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible application note jfet J111 transistor jfet transistor for VCR VCR2N VCR4N 2N5486 AN105 J111 PN4119A SST111

    fet vcr compatible

    Abstract: 2N5486 AN105 J111 PN4119A SST111 SST4119 SST5486 jfet J111 transistor jfet idss 10 ma vp -3
    Text: AN105 Siliconix FETs As VoltageĆControlled Resistors A voltageĆcontrolled resistor VCR may be defined as a threeĆterminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.


    Original     		PDF AN105 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible 2N5486 AN105 J111 PN4119A SST111 SST4119 SST5486 jfet J111 transistor jfet idss 10 ma vp -3

    application note jfet J111 transistor

    Abstract: datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N
    Text: AN105 FETs As VoltageĆControlled Resistors Introduction: The Nature of VCRs A voltage-controlled resistor VCR may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.


    Original     		PDF AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 application note jfet J111 transistor datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF 226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA

    pj211

    Abstract: J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117
    Text: INT ER F E T CORP 2bE D • 4fl2bflflä 0 0 0 0 2 3 6 T ■ C1 T '- Z Z - Z S ' -r~3s-~?.5 N Channel JFETs _ SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrical Characteristics at TA = 25°C VGSlo»i V Bfl|GSS less Ui lG


    OCR Scan     		PDF NJ132 NJ132 pj211 J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117

    4221 transistor

    Abstract: 2n4220 to72 - 2N4221 2N4222 2N4221 transistor 4221 2N4220A 2N4221 transistor 2N4221A 4222A
    Text: Philips Components Data sheet status Preliminary specification date of issu« October 1990 2N4220/4220A/4221/4221A/ 4222/4222A N-channel J-FETs PINNING - TO-72 FEATURES PIN 1 2 3 4 • High gain in VHF range • Low receiver noise figure. DESCRIPTION PIN CONFIGURATION


    OCR Scan     		PDF 2N4220/4220A/4221/4221A/ 4222/4222A 2N4220/4220A/4221/4221A/4222/4222A 2N4220/A 2N4221/A 2N4222/A 2N4220A 2N4221A 2N4222A 4221 transistor 2n4220 to72 - 2N4221 2N4222 2N4221 transistor 4221 2N4221 transistor 4222A

    2N4220

    Abstract: 2N4222 2N4221 transistor
    Text: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N4220/4220A/4221/4221A/ 4222/4222A N-channel J-FETs FEATURES • High gain in VHF range • Low receiver noise figure. DESCRIPTION PINNING - TO-72 1 2 3 4 drain source


    OCR Scan     		PDF 2N4220/4220A/4221/4221A/ 4222/4222A BB164 QCI35Ab2 2N4220/4220A/4221/4221A/4222/4222A bbS3T31 0035flb4 2N4220/A 2N4221/A 2N4222/A 2N4220 2N4222 2N4221 transistor

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091 2N4091 2N4856 MPF971
    Text: Motorola offers a line of field-effect transistors that encom­ passes the latest technology and covers the full range of FET applications. Included here is a wide variety of junction FETs, MOSFETs with P- or N-channel polarity with both single and dual gates and TMOS FETs. These FETs include devices de­


    OCR Scan     		PDF MPF971 N3993 N3994 2N4859A 2N4856A 2N4856 N4859 2N4391 MPF4391 2N4091 P-Channel Depletion Mode FET P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091

    2n4221

    Abstract: 2n4220 2N4222 2N4221 transistor Philips MBB 2N4220A 4221 transistor 2N4221A 2N4222A to72 - 2N4221
    Text: 711Qô2b OObôObfl 2 0 2 • P H I N Philips Semiconductors Data sheet status Preliminary specification date of issue October 1990 2N4220/4220A/4221/4221A/ 4222/4222A N-channel J-FETs FEATURES PINNING - TO-72 • High gain in VHF range • Low receiver noise figure.


    OCR Scan     		PDF 711002b 2N4220/4220A/4221/4221A/ 4222/4222A 2N4220/4220V 2N4220/A 2N4221/A 2N4222/A 2n4221 2n4220 2N4222 2N4221 transistor Philips MBB 2N4220A 4221 transistor 2N4221A 2N4222A to72 - 2N4221

    2N5460

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460; 2N5461; 2N5462 DESCRIPTION P-channel silicon junction FET in a TO-92 plastic envelope. Intended for use as an analog switch and an amplifier. PINNING - TO-92 PIN DESCRIPTION 1


    OCR Scan     		PDF 2N5460; 2N5461; 2N5462 2N5460/5461/5462 2N5460 2N5461 2N5460

    LF155A

    Abstract: No abstract text available
    Text: r z 7 L P ! 5 5 /2 5 5 /3 5 5 SG S TU O M SO N Ä 7# SERIES J -F E T INPUT SINGLE OPERATIONAL AMPLIFIERS • REPLACE HYBRID AND MODULE FET OP AMPs. RUGGED J-FETs ALLOW BLOW-OUT FREE HANDLING COMPARED WITH M OSFET INPUT DEVICES ■ EXCELLENT FOR LOW NOISE APPLICATIONS


    OCR Scan     		PDF LF155/255/355 LF155A

    LF257M

    Abstract: F357 LF356L MEF20 LF155-LF156-LF157 LF155A
    Text: rz 7 Ä 7# SCS-THOMSON LF1 55 LF156-LF157 J -F E T INPUT SINGLE OPERATIONAL AMPLIFIERS • REPUCE HYBRID AND MODULE FET OP AMPs. RUGGED J-FETs ALLOW BLOW-OUT FREE HANDLING COMPARED WITH MOSFET INPUT DEVICES ■ EXCELLENT FOR LOW NOISE APPLICATIONS USING EITHER HIGH OR LOW SOURCE IMPE­


    OCR Scan     		PDF LF156-LF157 LCC20 LF155-LF156-LF157 27mox. LF257M F357 LF356L MEF20 LF155-LF156-LF157 LF155A

    LF157

    Abstract: LF355L LF356 pin diagram LF355-LF356-LF357
    Text: LF155 - LF255 - LF355 LF156 - LF256 - LF356 iy LF157 - LF257 - LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS SGS-THOMSON • REPLACE HYBRID AND MODULE FET OP AMPs ■ RUGGED J-FETs ALLOW BLOW-OUT FREEHANDLING COMPARED WITH MOSFET INPUT DEVICES ■ EXCELLENT FOR LOW NOISE


    OCR Scan     		PDF LF155 LF156 LF157 7T5TE37 LF355L LF356 pin diagram LF355-LF356-LF357