FET J134
Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110B
1011LD110B
110Wpk
1030MHz
20Network
250mA,
FET J134
JMC5801
1000uf 63V electrolytic capacitor
capacitor 470uf/63v
63V 470uf
J134 MOSFET
description of capacitor 470uf 63v
1060 fet
470uf 63v
c06 capacitor
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Untitled
Abstract: No abstract text available
Text: MS2553C 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz GENERAL DESCRIPTION The MS2553C is a medium power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.
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MS2553C
MS2553C
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J154
Abstract: jmc5801 capacitor 220uF/63V RO4350 MS2553C
Text: MS2553C 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz GENERAL DESCRIPTION The MS2553C is a medium power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.
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Original
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PDF
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MS2553C
MS2553C
J154
jmc5801
capacitor 220uF/63V
RO4350
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Untitled
Abstract: No abstract text available
Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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Original
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PDF
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1011LD110B
1011LD110B
110Wpk
1030MHz
250mA,
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