BYV40
Abstract: BYV40E SC18
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV40E series FEATURES SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability
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BYV40E
OT223
OT223
BYV40
SC18
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smd jsp
Abstract: 20CT BYV116 PBYR225CT SC18 smd diode A1 1466 diode smd jsp 33
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop and absence of stored charge. These
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OT223
PBYR225CT
smd jsp
20CT
BYV116
SC18
smd diode A1
1466 diode
smd jsp 33
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20CT
Abstract: BYV116 PBYR225CT SC18 BYV116 25
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR225CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • low profile surface mounting
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PBYR225CT
OT223
20CT
BYV116
SC18
BYV116 25
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BYV40
Abstract: SC18 SMD footprint design
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,
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BYV40
OT223
SC18
SMD footprint design
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BYV40E series Rectifier diodes ultrafast, rugged Product specification September 1998 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYV40E series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V
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BYV40E
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PBYR245CT
Abstract: SC18
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR245CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • low profile surface mounting
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PBYR245CT
OT223
SC18
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PBYR245CT
Abstract: SC18 JSP DIODE
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop and absence of stored
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OT223
PBYR245CT
SC18
JSP DIODE
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BYV40E series Rectifier diodes ultrafast, rugged Product specification September 1998 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYV40E series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V
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BYV40E
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MSB003
Abstract: PMV213SN
Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.
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PMV213SN
M3D088
PMV213SN
MBB076
MSB003
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PMEG3020ER
Abstract: SOD-128
Text: AN10808 Thermal consideration of NXP FlatPower MEGA Schottky barrier rectifiers - Selection criteria Rev. 1 — 29 June 2010 Application note Document information Info Content Keywords FlatPower MEGA Schottky barrier rectifiers, thermal consideration, selection criteria
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AN10808
PMEG3020ER
SOD-128
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MSA435
Abstract: PMLL4148 PMLL4148L PMLL4448 MSA461
Text: PMLL4148L; PMLL4448 High-speed switching diodes Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.
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PMLL4148L;
PMLL4448
OD80C
PMLL4148L
OD80C
MSA435
PMLL4148
PMLL4148L
PMLL4448
MSA461
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MSA435
Abstract: BAS32L
Text: BAS32L High-speed switching diode Rev. 04 — 22 March 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C SMD package.
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BAS32L
OD80C
MSA435
BAS32L
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mosfet 600V 20A
Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
Text: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce
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releases/2008/power
mosfet 600V 20A
L084
to220sis equivalent
toshiba mosfet
TK12J60U
TK15A60U
mosfet 12A 600V
tk12d60u
TK20A60U
toshiba cmos memory camera
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PMV213SN
Abstract: PMV213
Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.
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PMV213SN
M3D088
PMV213SN
MBB076
MSB003
771-PMV213SN215
PMV213
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di292
Abstract: pj 26 diode MJ-05 ci3022 ci470 SCM30 ci573 CMOS spice model di2910 RI57
Text: Spice Models InputBuff Operation Guide How to Use InputBuff Overview Pin VPWR should be connected to the system positive supply and be between 4.5 and 5.5 volts with respect to ground. Pin VGND should be connected to system ground. This memo responds to customer requests for a SPICE model for the HOTLink TTL and ECL input buffers. The requested uses of the output model include:
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smd diode a7
Abstract: smd jsp SMD a7 S BAV99 SOT 23 smd diode marking A7 SOT-23 JSP SMD JSp SOT23 bav99 sot-23 smd transistor A7 Diode BAV99 SOT23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking BAV99 = A7 High-Speed Switching Series Diode Pair
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BAV99
OT-23
C-120
200310E
smd diode a7
smd jsp
SMD a7 S
BAV99 SOT 23
smd diode marking A7 SOT-23
JSP SMD
JSp SOT23
bav99 sot-23
smd transistor A7
Diode BAV99 SOT23
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pj 59
Abstract: PJ216 pj 26 diode PJ 75 PJ 67 PJ 74 PJ-25 ci3015 pj 84 pj 50 diode
Text: fax id: 5113 Spice Models InputBuff Operation Guide How to Use InputBuff Overview Pin VPWR should be connected to the system positive supply and be between 4.5 and 5.5 volts with respect to ground. Pin VGND should be connected to system ground. This memo responds to customer requests for a SPICE model for the HOTLink TTL and ECL input buffers. The requested uses of the output model include:
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di292
Abstract: CMOS spice model ci470 CI573 pj 26 diode i2931 di640 ci547 RI57 W1-300
Text: Spice Models for HOTLink spect to ground. Pin VGND should be connected to InputBuff Operation Guide system ground. Overview Pin A is the modeled input pin. The TTLinput buffĆ This memo responds to customer requests for a er is valid for all of the TTL inputs on the
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CY7B923/933.
CY7B933.
di292
CMOS spice model
ci470
CI573
pj 26 diode
i2931
di640
ci547
RI57
W1-300
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PHT6NQ10T
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHT6NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 6.5 A g
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OT223
PHT6NQ10T
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SPMB50A500
Abstract: No abstract text available
Text: SPMB50A500 CrSiGconix in c o r p o r a te d Power MOSFET Module PRODUCT SUMMARY V BR DSS 500 '"JSP •d V ISOL (A) (V) 50 2500 0.100 3 9 D1 FEATURES: APPLICATIONS: • • • • • • • • • • • 4 G1 O— Half-bridge Circuit Fast Intrinsic Diode (270 ns)
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SPMB50A500
SPMB50A500
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Rectifier diodes PBYR245CT series Schottky FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching • Reverse surge capability
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PBYR245CT
OT223
OT223
100ms
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Productspecification BAS19; BAS20; BAS21 General purpose diodes FEATURES • Small plastic SMD package • Switching speed: max. 50 ns MARKING PINNING MARKING CODE TYPE NUMBER PIN 1 DESCRIPTION anode • General application BAS19 JPp
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BAS19;
BAS20;
BAS21
BAS19
BAS20
BAS19,
BAS20,
BAS21
plastBAS19;
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Preliminary specification Breakover diodes BR211SM series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current
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BR211SM
BR211SM-140
BR211SM-280
OUTLINE-SOD106
13emperature.
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diode sy 171 10
Abstract: diode sy 170/10
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,
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BYV40
OT223
BYV40-
OT223.
diode sy 171 10
diode sy 170/10
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