Junction-FET
Abstract: 2SJ164 2SK1104 SC-72
Text: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS
|
Original
|
2SJ164
2SK1104
SC-72
Junction-FET
2SJ164
2SK1104
SC-72
|
PDF
|
2SJ0163
Abstract: 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 2.90+0.20 –0.05
|
Original
|
2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
|
PDF
|
2SK1104
Abstract: 2SJ0164 2SJ164 SC-72
Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage
|
Original
|
2SJ0164
2SJ164)
2SK1104
SC-72
2SK1104
2SJ0164
2SJ164
SC-72
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1
|
Original
|
2002/95/EC)
2SJ0163
2SJ163)
2SK1103
SC-59
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name
|
Original
|
2002/95/EC)
2SJ0364G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SJ163 Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction Unit : mm For general use switching Complementary with 2SK1103 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID –20 mA Gate current IG –10
|
Original
|
2SJ163
2SK1103
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Features ■ Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2
|
Original
|
2002/95/EC)
2SJ0364G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation
|
Original
|
2SJ0163
2SJ163)
2SK1103
O-236
SC-59
|
PDF
|
Junction-FET
Abstract: 2SJ0163 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 3 V Drain current ID −20 mA Gate current
|
Original
|
2SJ0163
2SJ163)
2SK1103
Junction-FET
2SJ0163
2SJ163
2SK1103
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features
|
Original
|
2002/95/EC)
2SJ0164
2SJ164)
2SK1104
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name
|
Original
|
2002/95/EC)
2SJ0364G
|
PDF
|
VDSV
Abstract: 2SJ163 2SK1103 mini 29
Text: Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS 65 V Drain current ID −20
|
Original
|
2SJ163
2SK1103
VDSV
2SJ163
2SK1103
mini 29
|
PDF
|
2SJ0364
Abstract: 2SJ364
Text: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-Channel Junction FET For analog switch (0.425) unit: mm 0.3+0.1 –0.0 • Features ● Low ON-resistance ● Low-noise characteristics 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10
|
Original
|
2SJ0364
2SJ364)
2SJ0364
2SJ364
|
PDF
|
2SK1104
Abstract: 2SJ0164 2SJ164
Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features 15.6±0.5 • Low ON resistance • Low-noise characteristics
|
Original
|
2SJ0164
2SJ164)
2SK1104
2SK1104
2SJ0164
2SJ164
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1103 • Package ■ Features
|
Original
|
2002/95/EC)
2SJ0163
2SJ163)
2SK1103
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package ■ Features • Low ON resistance • Low-noise characteristics ■ Absolute Maximum Ratings Ta = 25°C
|
Original
|
2002/95/EC)
2SJ0364G
|
PDF
|
2SJ0163
Abstract: 2SJ163 2SK1103
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET For switching circuits Complementary to 2SK1103 • Package ■ Features • Code Mini3-G1 • Pin Name • Low ON resistance
|
Original
|
2002/95/EC)
2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
|
PDF
|
2N5460
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460; 2N5461; 2N5462 DESCRIPTION P-channel silicon junction FET in a TO-92 plastic envelope. Intended for use as an analog switch and an amplifier. PINNING - TO-92 PIN DESCRIPTION 1
|
OCR Scan
|
2N5460;
2N5461;
2N5462
2N5460/5461/5462
2N5460
2N5461
2N5460
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs
|
OCR Scan
|
|
PDF
|
2SJ145
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ145 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ145 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING 2.1 ±0.2 is especially designed for low frequency voltage amplify, analog switch
|
OCR Scan
|
2SJ145
2SJ145
SC-70
10mVrms.
|
PDF
|
2SJ40
Abstract: SK381 2SK381
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ40 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ40 is a small type resin sealed P channel junction type FET. It is OUTLINE DRAWING 4.3MAX especially designed to r low frequency voltage am plify, analog switch
|
OCR Scan
|
2SJ40
2SJ40
2SK381
10mVrms
SK381
SK381
2SK381
|
PDF
|
2SJ125
Abstract: marking XI
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ125 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ125 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING o - +0.5 2-5 0.3 is especially designed for low frequency voltage amplify, analog switch
|
OCR Scan
|
2SJ125
2SJ125
SC-59
O-236
10mVrms.
marking XI
|
PDF
|
NEC Ga FET marking L
Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm
|
OCR Scan
|
NE329S01
NE329S01
NE329S01-T1
NE329S01-T1B
NEC Ga FET marking L
lg TYP 513 309
low noise FET NEC U
SAAI Marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Panasonic Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET For im p e d a n ce c o n ve rsio n in low fre q u e n c y For e le c tre t c a p a c ito r m ic ro p h o n e • • Features High mutual conductance gm Low noise voltage NV
|
OCR Scan
|
2SK1860
|
PDF
|
