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Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT juPD444008L 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The ^¡PD444008L is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
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juPD444008L
512K-WORD
PD444008L
36-pin
44-pin
PD444008LLE-A10
PD444008LLE-A12
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nec upd ic
Abstract: sb 020i
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT juPD444008 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The ,uPD444008 is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The ,uPD444008 is packaged in 36-pin plastic SOJ and 44-pin plastic TSOP (II).
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OCR Scan
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PDF
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uPD444008
512K-WORD
36-pin
44-pin
PD444008LE-8
PD444008LE-10
PD444008LE-12
PD444008LE-15
nec upd ic
sb 020i
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