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    K 1094 TRANSISTOR Search Results

    K 1094 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 1094 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BONUS-AN68-1

    Abstract: TSM-HV50 BR6000T IEC60831 TSM-HV690
    Text: Direct Link 1094 Applications & Cases Dynamische BLK – Beispiel Windkraftanlagen November 2007 Schnelle Reaktion EPCOS führt alle Schlüsselkomponenten für dynamische Blindleistungskompensations-Systeme. Solche Systeme zeichnen sich durch schnelle Reaktionszeiten und weitgehende Wartungsfreiheit aus.


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    Zero crossing switching thyristors module

    Abstract: BONUS-AN68-1 BR6000T thyristor using zero crossing circuit MKP and MKK power capacitor TSM-HV50 wind turbine diagram all types of thyristor and applications epcos 5000 08 EPCOS capacitors
    Text: Direct Link 1094 Applications & Cases Dynamic PFC in wind power plants November 2007 Fast reaction EPCOS portfolio features all key components for dynamic power factor correction PFC systems. Wind power plants, in particular, stand to profit from the application of such systems, which feature fast reaction times and


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    marking H2A sot-23

    Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the


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    DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC 88/SOT marking H2A sot-23 MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3 PDF

    free transistor equivalent book

    Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D


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    DL126TRS/D DL126/D. BRD8011/D free transistor equivalent book marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE PDF

    BFN21

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon High-Voltage Transistor BFN 21 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 20 NPN


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    Q62702-F1059 OT-89 CHP00600 BFN21 PDF

    k 1094 transistor

    Abstract: transistor K 1096 MARKING Dt3 DT3 SC-88 PUMD3
    Text: Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors PUMD3 FEATURES • Transistors with different polarity and built-in bias resistors R1 and R2 typ. 10 k ii each 6 5 4 1 2 3 • No mutual interference between the transistors


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    SC-88) SC-88 k 1094 transistor transistor K 1096 MARKING Dt3 DT3 SC-88 PUMD3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GENERAL DESCRIPTION PHX1N50E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high


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    PHP1N50E PHX1N50E PDF

    ld 1088 bs

    Abstract: k 1094 transistor 1/ld 1088 bs
    Text: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 380 Vbs 1000 V 5.5 A ^bsfon 2w Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs V DGR Drain-gate voltage


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    O-218AA C67078-A3205-A2 ld 1088 bs k 1094 transistor 1/ld 1088 bs PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks


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    BCV61 BCV61 Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 fi235b05 fl235b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GEN ER AL DESCRIPTION PHX1N50E QUICK R EFEREN CE DATA N-channel enhancement mode field-effect power transistor in a fuf! pack, plastic envelope featuring high avalanche energy capability, stable


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    PHP1N50E PHX1N50E PINNING-SOT186A PDF

    transistor rf m 1104

    Abstract: TRANSISTOR 102 K5C 2SD1077 1080II n 1106 n1106 n25x
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode ' • FR ED FET fé YW5S 3 Pin 1 Pin 2 Type BUZ 380 Vfes 1000 V b flbsfon 2w 5.5 A Pin 3 D G S Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage


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    O-218AA C67078-A3205-A2 flS35bOS 235b05 623SbGS PDF

    LD25V

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


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    BUK9510-30 T0220AB LD25V PDF

    TEA 1091

    Abstract: 2Sc2565 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    2SC2564 2SC2565 100Hz, TEA 1091 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090 PDF

    QS 100 NPN Transistor

    Abstract: transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor
    Text: • P hilips Sem iconductors •— bb S3 T3 1 D0 25 17 5 254 « A P X N AUER P H I L I P S / D I S C R E T E Product specification b7E NPN 5 GHz wideband transistor DESCRIPTION fc BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use


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    bbS3T31 D025175 BFR93 ON4186) BFT93. QS 100 NPN Transistor transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor PDF

    d 1047 transistor

    Abstract: transistor d 1663 AN1043 HP optocoupler 4100 4200 HP 3700 optocoupler HP optocoupler 4200 transistor wm k 1094 transistor AN1004 transistor 1047
    Text: Wm HEW LETT A"KM P A C K A R D Applications The folloiving application inform ation is either published in this catalog or ava ila b le from you r local H eivlett-Packard sales office, authorized distributor, or representative. Application Notes AN 1036 - Small Signal Solid State


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    HCPL-3700 d 1047 transistor transistor d 1663 AN1043 HP optocoupler 4100 4200 HP 3700 optocoupler HP optocoupler 4200 transistor wm k 1094 transistor AN1004 transistor 1047 PDF

    D38W7

    Abstract: 70MM D32W8 D38W10 D38W12 D38W8 D38W9 D38W7-D38W14
    Text: Silicon r " - j i f= 11— & Transistors i D38W7-14 The General Electric D38W7-D38W14 are NPN, silicon, planar, epitaxial transistors designed for low noise, high gain amplifier applications. FEATURES • • Low noise figure < 2db High voltage rating, 80V


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    D38W7-D38W14 Ta-25-C D38W7 70MM D32W8 D38W10 D38W12 D38W8 D38W9 PDF

    BFR91 philips

    Abstract: No abstract text available
    Text: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The


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    bbS3T31 BFR93 ON4186) BFT93. BFR91 philips PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY LCX007CN 3.4cm 1.35-inch Black-and-White LCD Panel Description The LCX007CN is a 3.4cm diagonal active matrix TFT-LC D panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. Use of three panels in combination


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    LCX007CN 35-inch) LCX007CN LCX007CL LCX007CL. 0C2DS32 PIN20 DD2DS33 PDF

    hst 1025

    Abstract: sony lcd tv circuits diagrams diagram power supply sony 32 in LCD TV circuit
    Text: SONY 3.4cm 1.35-inch Black-and-White LCD Panel Description The LCX007CL is a 3.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. Use of three panels in combination with


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    35-inch) LCX007CL LCX007CN LCX007CL 3fl23fl3 hst 1025 sony lcd tv circuits diagrams diagram power supply sony 32 in LCD TV circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: 7^2^237 G G 4 b 4 cî 7 ÛT3 «SSTH STP50N06 STP50N06FI SGS-THOMSON id * ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI . . • . . . . . V dss RDS on Id 60 V 60 V < 0.028 n < 0.028 Q 50 A 27 A TYPICAL Rds(oh) = 0.022 £2


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    STP50N06 STP50N06FI 004b5G3 STP50N06/FI PDF

    lta 601

    Abstract: No abstract text available
    Text: FIELD E F F E C T T R A N S IS T O R 2SK1359 SILICON N C H A N N E L MOS T Y P E tt-M O S i i -5 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U n it 15.9MAX. • Low D ra in -S o u rc e ON R e s is ta n c e : • H ig h Forward T r a n s f e r A d m itta n c e :


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    2SK1359 VDS-20V, lta 601 PDF

    D-90491

    Abstract: PJ 1179
    Text: SALES OFFICES EUROPE AMERICAS DENMARK ITALY BRAZIL 2730 HERLEV Herlev Torv, 4 Tel. 45-44 94.85.33 Telefax: (45-44) 948694 20090 ASSAGO (MI) V.le Milanofiori - Strada 4 - Palazzo A'4/A Tel. (39-2) 57546.1 <10 linee) Telefax: (39-2) 8250449 05413 SÀO PAULO


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    TeW39-51) i39-6) 286-CJ33 55-11i SF-08150 Ga6814 D-90491 PJ 1179 PDF

    TEA5101A

    Abstract: TEA5031 euroscart TV TEA5031D TEA5620 TEA5630 OSD ic color tv picture tube Circuit Diagram
    Text: S G S -T H O M S O N M » » [iO T ô * S TEA5031D COLOR TV VIDEO PROCESSOR • M ATRIXING OF R, G, B SIGNAL FROM (R-Y) AND (B-Y) ■ ELECTRONIC CO NTROL OF CONTRAST, BRIGHTNESS AND SATURATION ■ THREE CHANNELS VIDEO SWITCH, FOR SE­ LECTION O F INTERNAL SIGNAL (broadcast)


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    TEA5031D TEA5031D TEA5031 E88TEA5031D-03 4-57n TEA5101A euroscart TV TEA5620 TEA5630 OSD ic color tv picture tube Circuit Diagram PDF