marking H2A sot-23
Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
|
Original
|
DL126TRS/D
DL126/D.
70/SOT
75/SOT
416/SC
88/SOT
marking H2A sot-23
MPS3904RLRA
EIA 481 SOT363
H2B sot23
transistor 228 T3
|
PDF
|
MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
|
Original
|
MSA1022-CT1
Emitte218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MPF3821
BC237
MPS8093
BCY72
MMBF4856
MAD130P
MPS3866
bcy71 ALTERNATIVE
BSS72
|
PDF
|
BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
|
Original
|
MSC2295-BT1
MSC2295-CT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BF245
BC237
mps8093
bf244
MSA1022
msc2295
MAD1107P
MPS6568
|
PDF
|
EQUIVALENT TRANSISTOR bc549c
Abstract: BC550 equivalent table BC549B BC549B equivalent BC550C equivalent BC549C TRANSISTOR bc550 PIN bc549 equivalent BC549 CONNECTION
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors BC549B,C NPN Silicon BC550B,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC549 BC550 Unit Collector – Emitter Voltage VCEO 30 45 Vdc Collector – Base Voltage VCBO 30 50 Vdc
|
Original
|
BC549B
BC550B
BC549
BC550
226AA)
EQUIVALENT TRANSISTOR bc549c
BC550 equivalent table
BC549B equivalent
BC550C equivalent
BC549C TRANSISTOR
bc550 PIN
bc549 equivalent
BC549 CONNECTION
|
PDF
|
stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
|
Original
|
BAT54T1
Ju218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
stencil
BC237
automatic heat detector project report
BC393 equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MPQ2369 NPN Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 14 1 CASE 646–06, STYLE 1 TO–116 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO
|
Original
|
MPQ2369
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MMBTA70LT1 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –100 mAdc
|
Original
|
MMBTA70LT1
236AB)
|
PDF
|
BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
|
Original
|
SC-70/SOT-323
Spa218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
level shifter 2N5401
2771 040 0002
MUN5214T1
|
PDF
|
transistor 45 f 122
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for
|
Original
|
OT-223
BCP56
BCP53T1
inch/1000
BCP53T3
inch/4000
BCP53T1
transistor 45 f 122
|
PDF
|
bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
|
Original
|
BS170
226AA)
DS218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
bs170 replacement
BC237
BC30
transistor K 2056
|
PDF
|
BC489A equivalent
Abstract: BC489B equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors NPN Silicon BC489,A,B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 80 Vdc Emitter – Base Voltage
|
Original
|
BC489
226AA)
83NOT
BC489A equivalent
BC489B equivalent
|
PDF
|
transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
|
Original
|
BC337
BC338
226AA)
Junction218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor bc237 bc337
replacement transistor BC337
bc337 TRANSISTOR equivalent
bc338 equivalent
BC337 TO-92 Generic
BC337 circuit example
BC160-16
BC337-25 "pin compatible"
BC237
BC338 REPLACEMENT
|
PDF
|
BC237
Abstract: MPS-A70 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage
|
Original
|
MPSA70
226AA)
CHARACTERI218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
MPS-A70 equivalent
|
PDF
|
bc182 equivalent 2n2907
Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO
|
Original
|
BC182
BC183
BC184
BC184
226AA)
Junction218A
MSC1621T1
MSC2404
bc182 equivalent 2n2907
bc183 equivalent
BC237
BF245
bc184 equivalent
|
PDF
|
|
transistor MPS5771
Abstract: BC237 bfw4
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
|
Original
|
MMBD914LT1
236AB)
DE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
transistor MPS5771
BC237
bfw4
|
PDF
|
P2d MARKING CODE
Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage
|
Original
|
PZTA92T1
261AA
ELECTRI218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
P2d MARKING CODE
H2A transistor
ev 2816
BC237
transistor 2N2906
|
PDF
|
WT transistor
Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc
|
Original
|
MMBF5484LT1
236AB)
C218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
WT transistor
BC237
S11S
2n441
BF244B
2N3799
JFET BF245
C4 SOT-323
2N3819 MOTOROLA
|
PDF
|
2N5457 MOTOROLA
Abstract: 2N5457 equivalent BC237 transistor 2N5457
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
|
Original
|
2N5457
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N5457 MOTOROLA
2N5457 equivalent
BC237
transistor 2N5457
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value Unit VCEO –40 Vdc Collector – Base Voltage
|
Original
|
MMPQ3467
|
PDF
|
BC237
Abstract: jedec package TO-226AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
|
Original
|
BAV99LT1
236AB)
J218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
jedec package TO-226AA
|
PDF
|
SOD123
Abstract: marking pa sot-363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO
|
Original
|
MMBT6427LT1
236AB)
SOD123
marking pa sot-363
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor NPN Silicon BF393 COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 300 Vdc Collector – Base Voltage VCBO 300 Vdc Emitter – Base Voltage
|
Original
|
BF393
226AA)
|
PDF
|
6aa marking
Abstract: 327 SOT-6
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
|
Original
|
DTC114YE
DTC114YE
416/SC
6aa marking
327 SOT-6
|
PDF
|
2n1613 equivalent
Abstract: BC237 diode l 0607
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
|
Original
|
SC-70/SOT-323
BAV99WT1
BAV99LT1.
BAV99RWT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2n1613 equivalent
BC237
diode l 0607
|
PDF
|