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    K 1358 FET TRANSISTOR Search Results

    K 1358 FET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 1358 FET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FET K 1358

    Abstract: K 1358 fet transistor 11N03LA IPB11N03LA JESD22 PG-TO263-3-2 11N03 marking ff
    Text: IPB11N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 11.2 mΩ ID 30 A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB11N03LA PG-TO263-3-2 11N03LA FET K 1358 K 1358 fet transistor 11N03LA JESD22 PG-TO263-3-2 11N03 marking ff PDF

    DIODE smd marking CODE df

    Abstract: IPB11N03LA SMD CODE d20
    Text: IPB11N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 11.2 mΩ ID 30 A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB11N03LA PG-TO263-3-2 Q67042- 11N03LA DIODE smd marking CODE df SMD CODE d20 PDF

    11N03LA

    Abstract: K 1358 fet transistor FET K 1358 IPB11N03LA IPI11N03LA IPP11N03LA
    Text: IPB11N03LA IPI11N03LA, IPP11N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 11.2 mΩ ID 30 A • N-channel


    Original     		IPB11N03LA IPI11N03LA, IPP11N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-4237 11N03LA 11N03LA K 1358 fet transistor FET K 1358 IPB11N03LA IPI11N03LA IPP11N03LA PDF

    11N03LA

    Abstract: IPI11N03LA IPP11N03LA JESD22 PG-TO220-3-2
    Text: IPI11N03LA OptiMOS 2 Power-Transistor IPP11N03LA Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 25 R DS on),max 11.5 ID 30 V mΩ A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI11N03LA IPP11N03LA PG-TO262-3-1 PG-TO220-3-1 11N03LA 11N03LA IPI11N03LA IPP11N03LA JESD22 PG-TO220-3-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPI11N03LA OptiMOS 2 Power-Transistor IPP11N03LA Product Summary Features V DS • Ideal for high-frequency dc/dc converters R DS on ,max • Qualified according to JEDEC1) for target application 25 11.5 ID 30 V m: A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI11N03LA IPP11N03LA IPI11N03LA IPP11N03LA PG-TO262-3 PG-TO220-3 11N03LA 11N03LA PG-TO262-3 PG-TO220-3 PDF

    10N03LA

    Abstract: 10N03 10N03L FET K 1358 K 1358 fet transistor IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA P-TO252-3-11
    Text: OptiMOS 2 Power-Transistor IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level


    Original     		IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA P-TO252-3-11 P-TO252-3-23 10N03LA 10N03 10N03L FET K 1358 K 1358 fet transistor IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA P-TO252-3-11 PDF

    GS 393

    Abstract: No abstract text available
    Text: IPI11N03LA OptiMOS 2 Power-Transistor IPP11N03LA Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 25 R DS on),max 11.5 ID 30 V mΩ A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI11N03LA IPP11N03LA IPI11N03LA IPP11N03LA PG-TO262-3-1 PG-TO220-3-1 11N03LA 11N03LA PG-TO262-3-1 PG-TO220-3-1 GS 393 PDF

    K 1358 fet transistor

    Abstract: FET K 1358 to220 pcb footprint 11N03LA IPI11N03LA IPP11N03LA JESD22 C3210
    Text: IPI11N03LA OptiMOS 2 Power-Transistor IPP11N03LA Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 25 R DS on),max 11.5 ID 30 V mΩ A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI11N03LA IPP11N03LA PG-TO262-3-1 PG-TO220-3-1 11N03LA K 1358 fet transistor FET K 1358 to220 pcb footprint 11N03LA IPI11N03LA IPP11N03LA JESD22 C3210 PDF

    PG-TO262

    Abstract: No abstract text available
    Text: IPI11N03LA OptiMOS 2 Power-Transistor IPP11N03LA Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 25 R DS on),max 11.5 ID 30 V mΩ A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPI11N03LA IPP11N03LA IPI11N03LA IPP11N03LA PG-TO262-3-1 PG-TO220-3-1 Q67042-S4240 Q67042-S4241 PG-TO262-3-1 PG-TO220-3-1 PG-TO262 PDF

    10N03LA

    Abstract: 10n03l FET K 1358 IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA PG-TO252-3-11
    Text: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level


    Original     		IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA PG-TO252-3-11 PG-TO252-3-23 10N03LA 10n03l FET K 1358 PG-TO252-3-11 PDF

    10n03la

    Abstract: 10n03l Q67042-S4286 10n03
    Text: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level


    Original     		IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA PG-TO252-3-11 Q67042-S4280 10n03la 10n03l Q67042-S4286 10n03 PDF

    10N03L

    Abstract: 10N03LA FET K 1358 10N03 K 1358 fet transistor M1698 IPD10N03LA PG-TO252-3-11 IPF10N03LA IPS10N03LA
    Text: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level


    Original     		IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA P-TO252-3-11 P-TO252-3-23 10N03L 10N03LA FET K 1358 10N03 K 1358 fet transistor M1698 PG-TO252-3-11 PDF

    10N03LA

    Abstract: 10N03L FET K 1358 K 1358 fet transistor IPU10N03LA P-TO251-3-1 P-TO252-3-11 IPS10N03LA IPD10N03LA IPF10N03LA
    Text: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level


    Original     		IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA P-TO252-3-11 P-TO252-3-23 10N03LA 10N03L FET K 1358 K 1358 fet transistor P-TO251-3-1 P-TO252-3-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor IPD10N03LA G IPF10N03LA G IPS10N03LA G IPU10N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max 10.4 mΩ ID 30 A • N-channel, logic level


    Original     		IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA IPD10N03LA IPF10N03LA IPS10N03LA IPU10N03LA P-TO252-3-11 P-TO252-3-23 PDF

    intel 845 MOTHERBOARD pcb CIRCUIT diagram

    Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
    Text: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		DL128/D Mar-2002 r14525 DL128 intel 845 MOTHERBOARD pcb CIRCUIT diagram 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a PDF

    vitramon

    Abstract: No abstract text available
    Text: by Mike Wong Preface Table of Contents Since the beginning of the digital revolution, the speed of a m icroprocessor has been governed by Moore's law postulated in 1968 by Intel's co-founder Gorden Moore. Moore suggested that the speed of a microprocessor would double in every 18 months.


    OCR Scan     		EL75XX 337X96R3 330pF, 337X96R3 55o/8 vitramon PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    jrc 2103 d

    Abstract: JRC 2073 jrc 2103 2073 jrc 27E SOT-23 JRC 2268 tk 2838
    Text: 5 Bit Synchronous CPU Controller with Power Good and Current Limit Features Description The CS-5166 is a synchronous dual NFET Buck Regulator Controller. It is designed to pow­ er the core logic of the latest high performance CPUs. It uses the V2 control method to achieve the


    OCR Scan     		CS-5166 CS-5166DW16 CS-5166DWR16 jrc 2103 d JRC 2073 jrc 2103 2073 jrc 27E SOT-23 JRC 2268 tk 2838 PDF

    Untitled

    Abstract: No abstract text available
    Text: p m MUX-16/MUX-28 D 16-CHANNEL/ DUAL 8-CHANNEL JFET ANALOG MULTIPLEXERS OVERVOLTAGE PROTECTED ii M o n o l i t h FEATURES GENERAL DESCRIPTION • JFET Switches Rather Than CMOS • Highly Resistant To Static Discharge Damage • No SCR Latch-up Problems


    OCR Scan     		MUX-16/MUX-28 16-CHANNEL/ 290OTypical MUX-16 DG506, HI-506A, AD7506 MUX-28 DGS07, HI-507A, PDF

    MUX2-b

    Abstract: UX16
    Text: .IPMÎ MUX-16/MUX-28 16-CHANNEL/DUAL 8-CHANNEL JFETANALOG MULTIPLEXERS OVERVOLTAGE PROTECTED) FEATURES G E N E R A L D ES C R IP TIO N • • • • • • • • • • • • • The MUX-16 Is a m onolithic 16-channel analog m ultiplexer w hich connects a sin gle output to 1 of the 16 analog inputs


    OCR Scan     		16-CHANNEL/DUAL MUX-16 16-channel MUX-28 MUX-16/MUX-28 MUX-16) MUX2-b UX16 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Untitled

    Abstract: No abstract text available
    Text: MUX-16/MUX-28 16-CHANNEL/DUAL 8-CHANNEL JFET ANALOG MULTIPLEXERS OVERVOLTAGE PROTECTED Pre c isio n M o n o lit h ic s Inc. FEATURES G E N E R A L D E S C R IP T IO N • JFET Switches Rather Than CMOS • Highly Resistant To Static Discharge Damage • No SCR Latch-up Problems


    OCR Scan     		MUX-16/MUX-28 16-CHANNEL/DUAL 290flTyplcal MUX-16 DG506, HI-506A, AD7506 MUX-28 DG507, HI-507A, PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF