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    K 1398 TRANSISTOR Search Results

    K 1398 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 1398 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX3510

    Abstract: MAX3510EEP
    Text: 19-1398; Rev 2; 8/99 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO Upstream CATV Amplifier Features ♦ Ultra-Low Power-Up/Down Transients, 7mV Typical at 59dBmV Output ♦ Single +5V Supply ♦ Output Level Ranges from <8dBmV to 64dBmV ♦ Gain Programmable in 1dB Steps


    Original     		PDF 59dBmV 64dBmV -47dBmV 160kHz -70dBmV MAX3510 MAX3510 MAX3510EEP

    Untitled

    Abstract: No abstract text available
    Text: 19-1398; Rev 2; 8/99 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO Upstream CATV Amplifier Features ♦ Ultra-Low Power-Up/Down Transients, 7mV Typical at 59dBmV Output ♦ Single +5V Supply ♦ Output Level Ranges from <8dBmV to 64dBmV ♦ Gain Programmable in 1dB Steps


    Original     		PDF 59dBmV 64dBmV -47dBmV 160kHz -70dBmV MAX3510 MAX3510 VOUT14

    CSA748

    Abstract: CSC1398 CSC1398A
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER


    Original     		PDF ISO/TS16949 O-220 CSC1398, CSC1398A CSA748 C-120 CSA748 CSC1398 CSC1398A

    CSA748

    Abstract: CSC1398 CSC1398A d 1398
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR


    Original     		PDF O-220 CSC1398, CSC1398A CSA748 C-120 CSA748 CSC1398 CSC1398A d 1398

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748


    Original     		PDF O-220 CSC1398, CSC1398A CSA748 C-120

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR


    Original     		PDF O-220 CSC1398, CSC1398A CSA748 C-120

    Untitled

    Abstract: No abstract text available
    Text: 19-1398; Rev 0; 10/98 > k i> j x iy k i Upstream CATV Amplifier e v a l u a t io n s av a \l ^b1^: Features The MAX3510 is a program m able pow er am plifier for use in CATV upstream applications. The device outputs up to 64dBm V continuous wave through a 2:1 (voltage


    OCR Scan     		PDF 59dBmV 64dBmV -47dBmV 160kHz -70dBmV MAX3510 64dBm

    Untitled

    Abstract: No abstract text available
    Text: 19-1398; Rev 0; 10/98 > k i> jx iy k i Upstream CATV A m p lifie r « •s s ? The MAX3510 is a program m able pow er am plifier for use in CATV upstream applications. The device outputs up to 64dBm V continuous wave through a 2:1 (voltage ratio) transformer. It features variable gain controlled by


    OCR Scan     		PDF MAX3510 64dBm 65MHz.

    Untitled

    Abstract: No abstract text available
    Text: CSC1398; CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 16,51 10.67 4,83 0,90 1.15 1.40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12,70 14.73 6.35 2.92 2.03 31.24 7 DEG 14.42


    OCR Scan     		PDF CSC1398; CSC1398A CSC1398, CSA748 DDD113fl

    C1398

    Abstract: No abstract text available
    Text: CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier ¿It. M DIM A B C E F G H J K L M M MIN MAX 16.51 10.67 4,83 0,90 1.15 1,40 3,75 3,88 2.29 2.79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2,92 31,24 7 DEG


    OCR Scan     		PDF CSC1398, CSC1398A CSA748 C1398

    d 1398

    Abstract: 1398 CSA748 CSC1398 CSC1398A
    Text: CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D £ F G H J K L M N MIN 14.42 9.63 3,56 MAX 16.51 10.67 4,83 0.90 1.15 1.40


    OCR Scan     		PDF CSC1398, CSC1398A CSC1398A CSA748 00011i3Ã d 1398 1398 CSC1398

    PC9203

    Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
    Text: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439


    OCR Scan     		PDF PC44E PC44H PC2102 PC3439 PC3442 PC3585 PC3879 PC4036* PC5038 PC5240 PC9203 PC638 PC6079 PC5671 PC160-1 PC9166 PC5303 C6650 PC9202

    tca150c

    Abstract: 1j99 SOLITRON
    Text: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications


    OCR Scan     		PDF 6079/2N2697 hF68602 DATEL2/26/62 tca150c 1j99 SOLITRON

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 24 BFN 26 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 25, BFN 27 PNP Type


    OCR Scan     		PDF Q62702-F1065 Q62702-F976 OT-23 fl535b05 aE35hDS

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QD2S 4bO S7b « A P X N AUER PHILIPS/DISCRETE BSP30 TO 33 b?E » JV SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.


    OCR Scan     		PDF bbS3T31 BSP30 BSP30 BSP31 BSP32 BSP33 00354b3

    D 1398 Transistor

    Abstract: k 1398 Transistor transistor AS 431 LB 121 NPN TRANSISTOR
    Text: REVISIONS m ulticom p ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # S PC-F005.DW G REV DOC. NO. S P C - F 0 0 5 DESCRIPTION DRAWN 1 447 RELEASED


    OCR Scan     		PDF PC-F005 30MHz, 10kohm 2N930A 35C0743 SPC--F005 D 1398 Transistor k 1398 Transistor transistor AS 431 LB 121 NPN TRANSISTOR

    BFR183W

    Abstract: No abstract text available
    Text: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF Q62702-F1493 OT-323 900MHz BFR183W

    D 1398 Transistor

    Abstract: k 1398 Transistor
    Text: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # SPC— F005.DWG REV DOC. NO. S P C -F005 DESCRIPTION DRAWN 1447 RELEASED


    OCR Scan     		PDF -F005 ove002 20MHz 500mV, 2N2102 35C0687 -F005 D 1398 Transistor k 1398 Transistor

    D 1398 Transistor

    Abstract: k 1398 Transistor
    Text: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # SPC—F005.DWG REV DOC. NO. S PC -F005 DESCRIPTION DRAWN DATE / / Effective: 7 / 8 / 0 2


    OCR Scan     		PDF -F005 SPC--F005 20MHz 500mV, 2N3700 D 1398 Transistor k 1398 Transistor

    D 1398 Transistor

    Abstract: k 1398 Transistor
    Text: REVISIONS multicomp A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # REV DOC. NO. SPC—F005 DESCRIPTION DRAWN RELEASED BYF 1885 DATE / 02 0 3/0 6


    OCR Scan     		PDF SPC--F005 100kH 2N4920 -F005 D 1398 Transistor k 1398 Transistor

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N SD1398 ;U RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P o u t = 6.0 W MIN. WITH 10.0 dB GAIN PIN CONNECTION 1 n O O DESCRIPTION The SD1398 is a gold metallized epitaxial silicon


    OCR Scan     		PDF SD1398 SD1398 SD1423 SD1424. 7T2T237 0D7D21b

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


    OCR Scan     		PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    DIODE S3V 70

    Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
    Text: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    OCR Scan     		PDF IRFMG50D IRFMG50U O-254 mil-8-19s00 I-404 DIODE S3V 70 DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 LSE 0149

    D 1398 Transistor

    Abstract: d 1398 BLV98 32Q1 ci 1404
    Text: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.


    OCR Scan     		PDF bfci53Ii31 D013b3b BLV98 OT-171 BLV98 D 1398 Transistor d 1398 32Q1 ci 1404