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    K 193 TRANSISTOR Search Results

    K 193 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    K 193 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: R1 2 1 3 K SERI ES PWM STEP-UP DC/DC CONVERTERS NO.EA-193-111020 OUTLINE R1213K Series are CMOS-based, PWM control low consumption current step-up DC/DC converter ICs. A low ripple high efficiency step up DC/DC converter can be composed of R1213K with only an inductor, a diode, divider


    Original     		EA-193-111020 R1213K Room403, Room109, 10F-1, PDF

    NR SOT-143

    Abstract: ta 8742 IC Q62702-F1282
    Text: BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-143 Q62702-F1282 Dec-13-1996 NR SOT-143 ta 8742 IC Q62702-F1282 PDF

    RCs INFINEON SOT-143

    Abstract: VPS05178 145-V10
    Text: BFP 193 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers 4  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VPS05178 OT-143 900MHz Oct-12-1999 RCs INFINEON SOT-143 VPS05178 145-V10 PDF

    Transistor BFR 38

    Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
    Text: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-23 Q62702-F1218 Dec-11-1996 Transistor BFR 38 Q62702-F1218 marking code ne sot 23 K 193 transistor PDF

    transistor marking zg

    Abstract: sot-23 Transistor MARKING CODE ZG
    Text: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dEl at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		900MHz OT-23 Q62702-F1218 BFR193 transistor marking zg sot-23 Transistor MARKING CODE ZG PDF

    Transistor BFR 38

    Abstract: No abstract text available
    Text: BFR 193 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VPS05161 OT-23 Oct-25-1999 Transistor BFR 38 PDF

    marking BFG

    Abstract: BFG193 VPS05163
    Text: BFG 193 NPN Silicon RF Transistor  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VPS05163 BFG193 OT-223 900MHz Oct-27-1999 marking BFG BFG193 VPS05163 PDF

    BFG193

    Abstract: Q62702-F1291 gma marking
    Text: BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-223 BFG193 Q62702-F1291 Dec-13-1996 Q62702-F1291 gma marking PDF

    transistor bf 193

    Abstract: Siemens ESP 100
    Text: SIEMENS BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fr = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		900MHz Q62702-F1282 OT-143 transistor bf 193 Siemens ESP 100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFQ 193 NPN Silicon RF Transistor 1  For low noise, high-gain amplifiers up to 2 GHz 2  For linear broadband amplifiers 3  fT = 7.5 GHz F = 1.3 dB at 900 MHz 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VPS05162 OT-89 Oct-12-1999 PDF

    A03 transistor

    Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor Q62702F-1610 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor PDF

    P346A

    Abstract: ME8003 ME6002 ME9001 ME9002 BC117 bc142 BSX19 BSX20 BSY95A
    Text: M icro- Electronics Sem iconductors N PN Transistors NPN Switching Transistors m in h FE m ax @ lc mA < < o < < Code V cao V o REFERENCE T A B L E sat ton ns ma to f. ns f T MHz S to c k No. O u tlin e D r a w in g No. BSX19 40 15 20 60 10 0.25 10 7 15 400


    OCR Scan     		BSX19 19552B BSX20 19553X BSY95A 19572G 19573C ME9001 19331F ME9002 P346A ME8003 ME6002 BC117 bc142 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F= 1.3 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1 =B II


    OCR Scan     		Q62702-F1312 OT-89 IS21el2 fl235b05 0122D22 0535bD5 D12E0E3 PDF

    Q62702-F1312

    Abstract: marking 93, sot-89 K 193 transistor BFQ193
    Text: BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		Q62702-F1312 OT-89 Dec-13-1996 Q62702-F1312 marking 93, sot-89 K 193 transistor BFQ193 PDF

    bfr 135

    Abstract: BFR 30 transistor BFR 80
    Text: BFR 193 L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz XY  For linear broadband amplifiers  fT = 8 GHz 3 F = 1.3 dB at 900 MHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		Feb-08-2001 bfr 135 BFR 30 transistor BFR 80 PDF

    IC 1296

    Abstract: K 193 transistor sot marking code ZS BFQ193
    Text: SIEMENS BFQ193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz Marking Ordering Code Pin Configuration BFQ 193 RCs 1=B 2=C CO II Q62702-F1312 Package m


    OCR Scan     		BFQ193 Q62702-F1312 OT-89 IS21el2 IC 1296 K 193 transistor sot marking code ZS BFQ193 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		900MHz BFG193 Q62702-F1291 OT-223 235b05 Q12177D D1E1771 PDF

    012n3

    Abstract: No abstract text available
    Text: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		BFP193 900MHz Q62702-F1282 OT-143 012n3 PDF

    K 193 transistor

    Abstract: ZG 1056
    Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900M Hz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFG193 1= E Q62702-F1291


    OCR Scan     		BFG193 Q62702-F1291 OT-223 900MHz K 193 transistor ZG 1056 PDF

    ac 0624 transistor 17-33

    Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
    Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		F1217 OT-143 ac 0624 transistor 17-33 uc 1604 0166 415 04 1 060 transistor cq 529 PDF

    lge 673

    Abstract: TRANSISTOR cq 802
    Text: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		053b3E0 017Q3C 62702-F1218 OT-23 01-1-1-7O lge 673 TRANSISTOR cq 802 PDF

    CD 1691 CB

    Abstract: CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559
    Text: NPN Silicon RF Transistor BFR 193 • For low-noise, high-gain am plifiers up to 2 GHz • For linear broadband amplifiers. • fT = 8 GHz. F = 1.2 d B at 800 MHz. B ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		F1218 OT-23 CD 1691 CB CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559 PDF

    ic 006

    Abstract: SD8250 F B J22
    Text: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84


    Original     		SD8250 SD8250 ic 006 F B J22 PDF

    ac 0624 transistor 17-33

    Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
    Text: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		Q62702-F1282 OT-143 ac 0624 transistor 17-33 transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060 PDF