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    K 2645 MOSFET Search Results

    K 2645 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    K 2645 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K 2645 schematic circuit

    Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


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    MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic circuit DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H PDF

    A114

    Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors
    Text: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


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    MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 A114 A115 AN1955 JESD22 MRF6S27085H MRF6S27085HSR3 Nippon capacitors PDF

    k 2645 MOSFET

    Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


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    MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101 PDF

    capacitor 1825

    Abstract: Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


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    MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085H capacitor 1825 Nippon capacitors PDF

    K 2645 schematic

    Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


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    MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H PDF

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


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    MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22 PDF

    2508051107Y0

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 EKMG630ELL331MJ20S
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


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    MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HSR3 EKMG630ELL331MJ20S PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


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    MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 PDF

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


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    MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22 PDF

    k 2645 MOSFET

    Abstract: K 2645 schematic circuit
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


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    MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 schematic circuit PDF

    Flyback Transformer Design EXCEL SPREADSHEET

    Abstract: SRW42EC-U10H014 MUR20100CT C3216X7R1E105KT SRW42EC SPA11N80C Flyback Transformer Design EXCEL MUR20100 AZ23CK18 SFH6155AA
    Text: AND8209/D 90 W, Single Stage, Notebook Adaptor Prepared by: Terry Allinder ON Semiconductor Sr. Applications Engineer http://onsemi.com APPLICATION NOTE Detailed Circuit Description General Description The 90 W demo board demonstrates the wide range of features found in the NCP1651. It provides an 18.5 V, 4.86 A


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    AND8209/D NCP1651. Flyback Transformer Design EXCEL SPREADSHEET SRW42EC-U10H014 MUR20100CT C3216X7R1E105KT SRW42EC SPA11N80C Flyback Transformer Design EXCEL MUR20100 AZ23CK18 SFH6155AA PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


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    SiR892DP SiR892DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SRW42EC

    Abstract: SRW42EC-U04H14 1.5KE25CA AND8124 106 35K resistor capacitor 106 35K D11/diode LP sd k 2645 MOSFET Flyback Transformer Design EXCEL SMT1206
    Text: AND8124/D 90 W, Universal Input, Single Stage, PFC Converter http://onsemi.com General Description The NCP1651 demo board uses a quad operational amplifier on the secondary to perform multiple functions. One section of the amplifier is used as the error amplifier. A


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    AND8124/D NCP1651 SRW42EC SRW42EC-U04H14 1.5KE25CA AND8124 106 35K resistor capacitor 106 35K D11/diode LP sd k 2645 MOSFET Flyback Transformer Design EXCEL SMT1206 PDF

    1N5408 equivalent

    Abstract: Flyback Transformer Design EXCEL how to calculate SM power Supply Transformer BAL19LT1 Flyback Transformer Design EXCEL SPREADSHEET CTX22-16134 MC33260 application k 2645 MOSFET CTX22 diode zener c23
    Text: AND8154/D NCP1230 90 Watt, Universal Input Adapter Power Supply Prepared by: Terry Allinder terry.allinder@onsemi.com ON Semiconductor http://onsemi.com APPLICATION NOTE General Description The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications


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    AND8154/D NCP1230 1N5408 equivalent Flyback Transformer Design EXCEL how to calculate SM power Supply Transformer BAL19LT1 Flyback Transformer Design EXCEL SPREADSHEET CTX22-16134 MC33260 application k 2645 MOSFET CTX22 diode zener c23 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


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    SiR892DP SiR892DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    d1n5406

    Abstract: 3104j D1N54 TL431 model SPICE k 2645 MOSFET 1N5408 equivalent CTX22-16134 how to calculate SM power Supply Transformer Flyback Transformer Design EXCEL MH 7474
    Text: AND8155/D NCP1231 90 Watt, Universal Input Adapter Power Supply Prepared by: Terry Allinder terry.allinder@onsemi.com ON Semiconductor http://onsemi.com APPLICATION NOTE General Description The NCP1231 implements a standard current mode control architecture. It’s an ideal candidate for applications


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    AND8155/D NCP1231 d1n5406 3104j D1N54 TL431 model SPICE k 2645 MOSFET 1N5408 equivalent CTX22-16134 how to calculate SM power Supply Transformer Flyback Transformer Design EXCEL MH 7474 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC S • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


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    SiR892DP SiR892DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    k 2645 MOSFET

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


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    SiR892DP SiR892DP-T1-GE3 11-Mar-11 k 2645 MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


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    SiR892DP SiR892DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Vishay Pro1

    Abstract: NCP1013P06 smd Optocoupler 601 arcotronics R82MC1220DQ02J NCP1013P10 smd Optocoupler 601 8 pin smd WKP222MCMBFOK arcotronics C4 k 2645 MOSFET Christophe Basso
    Text: AND8142/D A 6.0 W/12 W Universal Mains Adapter with the NCP101X Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE controller. The resistor in series with the auxiliary winding limits the current in the active VCC clamp, in case the


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    AND8142/D NCP101X Vishay Pro1 NCP1013P06 smd Optocoupler 601 arcotronics R82MC1220DQ02J NCP1013P10 smd Optocoupler 601 8 pin smd WKP222MCMBFOK arcotronics C4 k 2645 MOSFET Christophe Basso PDF

    Untitled

    Abstract: No abstract text available
    Text: STCC2540 USB charging controller with integrated power switch Datasheet - production data Applications • USB ports / hubs  Personal computers, all-in-one PCs  Monitors  Notebooks, ultrabooks  Tablet PCs VFQFPN 16L 3 x 3 x 0.8 mm  Universal wall charging adapters


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    STCC2540 DocID024711 PDF

    Untitled

    Abstract: No abstract text available
    Text: STCC2540 USB charging controller with integrated power switch Datasheet - production data Applications • USB ports / hubs  Personal computers, all-in-one PCs  Monitors  Notebooks, ultrabooks  Tablet PCs VFQFPN 16L 3 x 3 x 0.8 mm  Universal wall charging adapters


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    STCC2540 DocID024711 PDF

    Untitled

    Abstract: No abstract text available
    Text: STCC2540 USB charging controller with integrated power switch Datasheet - production data Applications • USB ports / hubs  Personal computers, all-in-one PCs  Monitors  Notebooks, ultrabooks  Tablet PCs VFQFPN 16L 3 x 3 x 0.8 mm  Universal wall charging adapters


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    STCC2540 DocID024711 PDF

    STCC5011

    Abstract: No abstract text available
    Text: STCC5011, STCC5021 USB charging controller with integrated power switch and attach detector Datasheet - production data Applications • USB ports/hubs  Personal computers, all-in-one PCs  Monitors  Notebooks, ultrabooks VFQFPN 16L - 3 x 3 x 0.8 mm


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    STCC5011, STCC5021 STCC5011/STCC5021 DocID024660 STCC5011 PDF