K 2645 schematic circuit
Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to
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MRF6S27085H
MRF6S27085HR3
MRF6S27085HSR3
MRF6S27085HR3
K 2645 schematic circuit
DBD16
2508051107Y0
A114
A115
AN1955
C101
JESD22
MRF6S27085H
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A114
Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors
Text: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6S27085H
MRF6S27085HR3
MRF6S27085HSR3
MRF6S27085HR3
A114
A115
AN1955
JESD22
MRF6S27085H
MRF6S27085HSR3
Nippon capacitors
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k 2645 MOSFET
Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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MRF6P27160H
MRF6P27160HR6
k 2645 MOSFET
K 2645 transistor
C1825C103J1RAC
TRANSISTOR MOSFET 2645
J204
mosfet j142
transistor d 2645
p 01 k 2645
A114
C101
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capacitor 1825
Abstract: Nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600
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MRF6S27085H
MRF6S27085HR3
MRF6S27085HSR3
MRF6S27085H
capacitor 1825
Nippon capacitors
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K 2645 schematic
Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600
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MRF6S27085H
MRF6S27085HR3
MRF6S27085HSR3
MRF6S27085HR3
K 2645 schematic
p 01 k 2645
K 2645 transistor
A114
A115
AN1955
C101
JESD22
MRF6S27085H
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k 2645 MOSFET
Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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MRF6P27160H
MRF6P27160HR6
k 2645 MOSFET
K 2645 transistor
NIPPON CAPACITORS
mosfet j142
100B3R3CP500X
A114
A115
AN1955
C101
JESD22
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2508051107Y0
Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 EKMG630ELL331MJ20S
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to
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MRF6S27085H
MRF6S27085HR3
MRF6S27085HSR3
MRF6S27085HR3
2508051107Y0
A114
A115
AN1955
C101
JESD22
MRF6S27085H
MRF6S27085HSR3
EKMG630ELL331MJ20S
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to
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MRF6S27085H
MRF6S27085HR3
MRF6S27085HSR3
MRF6S27085HR3
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k 2645 MOSFET
Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6P27160H
MRF6P27160HR6
k 2645 MOSFET
K 2645 transistor
NIPPON CAPACITORS
transistor d 2645
z33 vishay
A114
A115
AN1955
C101
JESD22
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k 2645 MOSFET
Abstract: K 2645 schematic circuit
Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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MRF6P27160H
MRF6P27160HR6
k 2645 MOSFET
K 2645 schematic circuit
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Flyback Transformer Design EXCEL SPREADSHEET
Abstract: SRW42EC-U10H014 MUR20100CT C3216X7R1E105KT SRW42EC SPA11N80C Flyback Transformer Design EXCEL MUR20100 AZ23CK18 SFH6155AA
Text: AND8209/D 90 W, Single Stage, Notebook Adaptor Prepared by: Terry Allinder ON Semiconductor Sr. Applications Engineer http://onsemi.com APPLICATION NOTE Detailed Circuit Description General Description The 90 W demo board demonstrates the wide range of features found in the NCP1651. It provides an 18.5 V, 4.86 A
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AND8209/D
NCP1651.
Flyback Transformer Design EXCEL SPREADSHEET
SRW42EC-U10H014
MUR20100CT
C3216X7R1E105KT
SRW42EC
SPA11N80C
Flyback Transformer Design EXCEL
MUR20100
AZ23CK18
SFH6155AA
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Untitled
Abstract: No abstract text available
Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc
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SiR892DP
SiR892DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SRW42EC
Abstract: SRW42EC-U04H14 1.5KE25CA AND8124 106 35K resistor capacitor 106 35K D11/diode LP sd k 2645 MOSFET Flyback Transformer Design EXCEL SMT1206
Text: AND8124/D 90 W, Universal Input, Single Stage, PFC Converter http://onsemi.com General Description The NCP1651 demo board uses a quad operational amplifier on the secondary to perform multiple functions. One section of the amplifier is used as the error amplifier. A
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AND8124/D
NCP1651
SRW42EC
SRW42EC-U04H14
1.5KE25CA
AND8124
106 35K resistor
capacitor 106 35K
D11/diode LP sd
k 2645 MOSFET
Flyback Transformer Design EXCEL
SMT1206
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1N5408 equivalent
Abstract: Flyback Transformer Design EXCEL how to calculate SM power Supply Transformer BAL19LT1 Flyback Transformer Design EXCEL SPREADSHEET CTX22-16134 MC33260 application k 2645 MOSFET CTX22 diode zener c23
Text: AND8154/D NCP1230 90 Watt, Universal Input Adapter Power Supply Prepared by: Terry Allinder terry.allinder@onsemi.com ON Semiconductor http://onsemi.com APPLICATION NOTE General Description The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications
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AND8154/D
NCP1230
1N5408 equivalent
Flyback Transformer Design EXCEL
how to calculate SM power Supply Transformer
BAL19LT1
Flyback Transformer Design EXCEL SPREADSHEET
CTX22-16134
MC33260 application
k 2645 MOSFET
CTX22
diode zener c23
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Untitled
Abstract: No abstract text available
Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc
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SiR892DP
SiR892DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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d1n5406
Abstract: 3104j D1N54 TL431 model SPICE k 2645 MOSFET 1N5408 equivalent CTX22-16134 how to calculate SM power Supply Transformer Flyback Transformer Design EXCEL MH 7474
Text: AND8155/D NCP1231 90 Watt, Universal Input Adapter Power Supply Prepared by: Terry Allinder terry.allinder@onsemi.com ON Semiconductor http://onsemi.com APPLICATION NOTE General Description The NCP1231 implements a standard current mode control architecture. It’s an ideal candidate for applications
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AND8155/D
NCP1231
d1n5406
3104j
D1N54
TL431 model SPICE
k 2645 MOSFET
1N5408 equivalent
CTX22-16134
how to calculate SM power Supply Transformer
Flyback Transformer Design EXCEL
MH 7474
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Untitled
Abstract: No abstract text available
Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC S • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters
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SiR892DP
SiR892DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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k 2645 MOSFET
Abstract: No abstract text available
Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc
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SiR892DP
SiR892DP-T1-GE3
11-Mar-11
k 2645 MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc
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SiR892DP
SiR892DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Vishay Pro1
Abstract: NCP1013P06 smd Optocoupler 601 arcotronics R82MC1220DQ02J NCP1013P10 smd Optocoupler 601 8 pin smd WKP222MCMBFOK arcotronics C4 k 2645 MOSFET Christophe Basso
Text: AND8142/D A 6.0 W/12 W Universal Mains Adapter with the NCP101X Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE controller. The resistor in series with the auxiliary winding limits the current in the active VCC clamp, in case the
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AND8142/D
NCP101X
Vishay Pro1
NCP1013P06
smd Optocoupler 601
arcotronics R82MC1220DQ02J
NCP1013P10
smd Optocoupler 601 8 pin smd
WKP222MCMBFOK
arcotronics C4
k 2645 MOSFET
Christophe Basso
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Untitled
Abstract: No abstract text available
Text: STCC2540 USB charging controller with integrated power switch Datasheet - production data Applications • USB ports / hubs Personal computers, all-in-one PCs Monitors Notebooks, ultrabooks Tablet PCs VFQFPN 16L 3 x 3 x 0.8 mm Universal wall charging adapters
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STCC2540
DocID024711
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Untitled
Abstract: No abstract text available
Text: STCC2540 USB charging controller with integrated power switch Datasheet - production data Applications • USB ports / hubs Personal computers, all-in-one PCs Monitors Notebooks, ultrabooks Tablet PCs VFQFPN 16L 3 x 3 x 0.8 mm Universal wall charging adapters
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STCC2540
DocID024711
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PDF
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Untitled
Abstract: No abstract text available
Text: STCC2540 USB charging controller with integrated power switch Datasheet - production data Applications • USB ports / hubs Personal computers, all-in-one PCs Monitors Notebooks, ultrabooks Tablet PCs VFQFPN 16L 3 x 3 x 0.8 mm Universal wall charging adapters
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STCC2540
DocID024711
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STCC5011
Abstract: No abstract text available
Text: STCC5011, STCC5021 USB charging controller with integrated power switch and attach detector Datasheet - production data Applications • USB ports/hubs Personal computers, all-in-one PCs Monitors Notebooks, ultrabooks VFQFPN 16L - 3 x 3 x 0.8 mm
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STCC5011,
STCC5021
STCC5011/STCC5021
DocID024660
STCC5011
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