VMO 580-02F
Abstract: ZY180L 580-02F
Text: VMO 580-02F HipPerFETTM Module VDSS = 200 V ID25 = 580 A Ω RDS on = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Preliminary Data Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25 ID80 TC = 25°C TC = 80°C
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580-02F
UL758,
ZY180L
350mm
VMO 580-02F
580-02F
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25 ID80 TC = 25°C
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580-02F
UL758,
ZY180L
350mm
ZY180R
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ZY180L
Abstract: ZY180R UL758
Text: HipPerFETTM Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Preliminary Data Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25 ID80 TC = 25°C TC = 80°C
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580-02F
UL758,
ZY180L
350mm
ZY180R
UL758
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VMO 580-02F
Abstract: zy180l
Text: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25
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580-02F
UL758,
ZY180L
350mm
ZY180R
D-68623
VMO 580-02F
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D-68623
Abstract: ZY180L ZY180R UL758
Text: Advanced Technical Information MegaMOSTMFET Module VMO 580-02T VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25
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580-02T
UL758,
ZY180L
350mm
ZY180R
D-68623
UL758
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7N80
Abstract: all transistor data sheet 7N80
Text: HiPerFETTM Power MOSFETs IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID cont = 7 A RDS(on) = 1.4 W trr = 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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O-247
O-204
7N80
all transistor data sheet 7N80
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM
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6N100
O-247
O-204
10Source
100ms
6N100
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID cont = 7 A RDS(on) = 1.4 W = 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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O-247
O-204
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6N90
Abstract: N100
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM
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6N100
O-247
O-204
10Source
100ms
6N100
6N90
N100
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6N90
Abstract: IXFH6N100
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 6N90 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM
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6N100
O-247
O-204
6N100
10Source
6N90
IXFH6N100
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID cont = 7 A RDS(on) = 1.4 W trr = 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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O-247
O-204
100ms
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6n80
Abstract: N80A D-68623 IXTM6N80A
Text: VDSS Standard Power MOSFET IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS on 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS
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O-247
O-204
O-204
O-247
6n80
N80A
D-68623
IXTM6N80A
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6n80
Abstract: 6n80a
Text: Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A VDSS ID25 RDS on 800 V 800 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS
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6N80A
O-204
O-247
O-247
6n80
6n80a
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6N80
Abstract: No abstract text available
Text: Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A VDSS ID25 RDS on 800 V 800 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS
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6N80A
O-204
O-247
6N80
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Untitled
Abstract: No abstract text available
Text: Standard Power MOSFET IXTH / IXTM 6N90 IXTH / IXTM 6N90A VDSS ID25 RDS on 900 V 900 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V VGS
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6N90A
O-204
O-247
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Untitled
Abstract: No abstract text available
Text: International S ] Rectifier HEXFET® Power MOSFET • • • • • • 4A55452 □014StlS 115 « I N R PD-9.593B IRC840 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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4A55452
014St
IRC840
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4835 mosfet
Abstract: 6n80a
Text: VDSS Standard Power MOSFET D ^025 IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V DS on 6A 6A 1.8 Q 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V * OSS T j = 25°C to 150°C 800 V Tj = 25°C to 150°C; RGS = 1 MQ 800 V Vos Continuous ±20 V VGSM
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O-247
O-204
O-204
O-247
C2-62
4835 mosfet
6n80a
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n90a
Abstract: IXTH
Text: vDSS Standard Power MOSFET IXTH/IXTM 6 N90 900 V IXTH/IXTM 6 N90A 900 V pDS on ^D25 1.8 Q 1.4 Q 6A 6A N-Channel Enhancement Mode Test Conditions VOSS v DGR T j = 25°C to 150°C 900 T j = 2 5 “ C to 150°C; RGS = 1 Mi2 900 V C ontinuous ±20 V Transient
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O-247
O-204
6N90A
C2-75
n90a
IXTH
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Untitled
Abstract: No abstract text available
Text: v DSS HiPerFET Power MOSFETs ix f h /ix f m g n m IXFH/IXFM 6 N100 Symbol Test Conditions v ^ Voa« Tj = 25°C to 150°C; Vos Continuous ±20 V Transient ±30 V 6 A vesM •» ' dm dv/dt Tc Maximum Ratings = 25“C to 150°C 1 f RGS=1 M£2J \ 6N90 900 V
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O-247
6N100
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6N90
Abstract: 6N90A
Text: IPIXYS Standard Power MOSFET IXTH/IXTM 6N90 IXTH/IXTM 6N90A VDSS ^D25 DS on 900 V 900 V 6A 6A 1.8 Q 1.4 Í2 D N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V ¥ dss T j =25°C to150°C 900 V VDQR Tj = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 900
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6N90A
to150
O-247
O-204
O-204
O-247
IXTM6N90
IXTMGN90A
6N90
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Untitled
Abstract: No abstract text available
Text: 1 □IXYS v* D S S Standard Power MOSFET IXTH/IXTM 6 N90 900 V IXTH/IXTM 6 N90A 900 V D ^D25 DS on 6A 6A 1.8 Q 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V woss ^ = 25°C to 150°C 900 V v DGR ^ = 25 °C to 150°C; RGS = 1 Mi2 900 V v es Continuous
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O-204
O-247
O-204
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5n100
Abstract: 5N100A
Text: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM
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N100A
O-247
O-204
O-204
O-247
4bflb52b
5n100
5N100A
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IXTH5N100A
Abstract: gs 1117 ax
Text: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000
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5N100
5N100A
to150
O-247
O-204
O-204
O-247
IXTH5N100
IXTM5N100
IXTH5N100A
gs 1117 ax
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Untitled
Abstract: No abstract text available
Text: mm T % r XYS Standard Power MOSFET v DSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80> 800 V p ^D25 DS on 6A 6A 1.8 ß 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 800 V v DGR Maximum Ratings T.J = 25°C to 150°C;* RGS„ = 1 MSi
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O-247
O-204
O-247
IXTH6N80A
IXTM6N80A
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