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    K 3053 TRANSISTOR Search Results

    K 3053 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    K 3053 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K 3053

    Abstract: 2N3053 2n 3053
    Text: M A XIM U M RATINGS Symbol 2N 3053 2N 3053A Unit C o lle c to r -E m itte r V o lt a g e ll v CEO 40 60 V dc C o lle c to r-B a s e V o lta g e VCBO 60 80 V dc E m itte r-B a s e V o lta g e vebo Rating C o lle c to r C u rre n t — C o n tin u o u s <C


    OCR Scan     		PDF

    2N5660

    Abstract: 2N5662
    Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN FEATURES • Meets MIL-S-19500/454 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & & & & JANTXV


    OCR Scan     		2N5660 2N5661 2N5662 2N5663 MIL-S-19500/454 2N56B1 2N96S3 2N5660, PDF

    LSE B9

    Abstract: LSE B6
    Text: IUCROSENI CORP/ ÜIATERTOÜIN 50E » T347Tb3 POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN D O lS im JANTX, JANTX, JANTX, JANTX, & & & & 5R4 • U N I T JANTXV JANTXV JANTXV JANTXV 2N 5664 2N 5665 2N 5666 2N 5667 T -33-07 F EA T U RE S • Meets MIL-S-19500/455


    OCR Scan     		T347Tb3 MIL-S-19500/455 LSE B9 LSE B6 PDF

    JANTX 2N5666

    Abstract: cfs 455 j 2N5664 2N5665 2N5666 JANTXV 2N5666 Jt 3026 j Unitrode transistors data To5 2N5667 3041 v
    Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N5664 2N5665 2N5666 2N5667 FE A T U R E S D ESCR IP TIO N • • • • • Unitrode high voltage transistors provide a unique combination of low saturation


    OCR Scan     		2N5664 2N5665 2N5666 2N5667 MIL-S-19500/455 2N56656509 S28G3 JANTX 2N5666 cfs 455 j JANTXV 2N5666 Jt 3026 j Unitrode transistors data To5 2N5667 3041 v PDF

    2N5862

    Abstract: 2N5660 3051 3026LS 2N5680 3036 100CC 2N5661 2N5662 2N5663
    Text: JAN, JAN, JAN, JAN, POWER TRANSISTORS 2 Amp, 300V, Planar NPN FEA TU R ES • Meets MlL-S-19500/454 • Collector-Base Voltage: up to 400V » D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & JANTXV 2N5660


    OCR Scan     		2N5660 2N5661 2N5662 2N5663 MlL-S-19500/454 2N5660 2N5662 2N5661, 2NS663 2N5862 3051 3026LS 2N5680 3036 100CC 2N5663 PDF

    Untitled

    Abstract: No abstract text available
    Text: M I C R O S E H I CO RP / IdATERTOüJN 5ÜE D • POWER TRANSISTORS ^347^3 JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN D G I S M Ö R 127 M U N I T JANTX, JANTX, JANTX, JANTX, & & & & JANTXV JANTXV JANTXV JANTXV 2N5660 2N5661 2N5662 2N5663 FEATURES D E S C R IP T I O N


    OCR Scan     		2N5660 2N5661 2N5662 2N5663 MIL-S-19500/454 2N5660, 2N5661 25iTlA PDF

    2N5664

    Abstract: cc 3053
    Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, FEATURES • Meets MIL-S-19500/455 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JA N , JA N T X ,


    OCR Scan     		2N5664 2N5665 2N5666 2N5667 MIL-S-19500/455 cc 3053 PDF

    F941

    Abstract: 2N6671 2N6673
    Text: M I L —S —19500/536{USAF AMENDMENT 3 8 Sep tem b er 1987_ SUPERSËDING AMENDMENT 2 7 F e b r u a r y 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVI CE, TRANSISTOR, NPN, S I L I C O N , POWER TYPES 2N6671, AND 2N6673, JAN, JANTX, AND JANTXV This


    OCR Scan     		MIL-S-19500/536Ã 2N6671, 2N6673, MIL-S-l9500/536 5961-F941) F941 2N6671 2N6673 PDF

    3053 TRANSISTOR

    Abstract: transistor 3053 2N3053
    Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung • High current gain


    OCR Scan     		Kolle00 3053 TRANSISTOR transistor 3053 2N3053 PDF

    zn1613

    Abstract: NKT0028 BFX84 T018
    Text: NPN Silicon Transistors IMPN S ilicon Transistors fo r high level audio applications Type Characteristics; at T.amb =25 C M a xim um ratings Case B F X 84 B F X 85 T05 T05 B F X 86 B F Y 50 B F Y 51 B FY 52 B F Y 53 N K T 0028 N K T 0128 N K T 10339 N K T 10439


    OCR Scan     		0V/150mA) 150mA/15mA) BFX84 zn1613 NKT0028 T018 PDF

    TT 6053

    Abstract: tic 253
    Text: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • ■ R CD’s FR series was designed to obtain the best from two devices. It com bines the perform ance of a precision grade resistor with precisely controlled fusing characteristics.


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    K 3053 TRANSISTOR

    Abstract: k 246 transistor
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness


    OCR Scan     		R02731B10W 0CH3C54 K 3053 TRANSISTOR k 246 transistor PDF

    RCA-2N3053

    Abstract: rca 2N3053 2n3053 RCA 2N3053
    Text: E SOLID STATE 3875081 G E Dl SOLID STATE jjü f| 3 Ö 7 S 0 Ö 1 0G171D1 01E D 17101 □ | 7^ - ¿ 7 - H ig h-S p eed Pow er 2N3053, 2N3053A File Number 960 General-Purpose, Medium-Power


    OCR Scan     		0G171D1 2N3053, 2N3053A Mcs-27512 RCA-2N3053 2N3053A 2N3Q53A. 3fl75Dfll rca 2N3053 2n3053 RCA 2N3053 PDF

    MPS 4355 transistor

    Abstract: mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor
    Text: 6091788 MICRO ELECTRONICS CORP ~~ä5 _ * 82D 00661 DE |bGT17fifl GGGDbbl 2 | Medium Power Am plifiers and Switches X P O L A R IT Y M AXIM UM R A T IN G S CASE PN PN PN PN PN 3568 3569 3638 3638A 3641 N N P P N TO-92A TO-92A TO-92A TO-92A TO-92A 625 625 625


    OCR Scan     		bGT17fifl O-92A MPS 4355 transistor mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor PDF

    bc140

    Abstract: ZT152 BC141 bc109 2N2102 2N4036 BC161 BCY65E BCY77 ZT189
    Text: PNP GENERAL PURPOSE TA BLE2 PNP SILICON PLANAR G EN ER A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


    OCR Scan     		BCY70 2N2605 2N2604 ZT181 ZT182 BCY78 BCY58 BCY72 ZT180 ZT187 bc140 ZT152 BC141 bc109 2N2102 2N4036 BC161 BCY65E BCY77 ZT189 PDF

    BFG97

    Abstract: BFG31 MBB350
    Text: Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 PIN N IN G FEA TUR ES • High output voltage capability PIN D E S C R IP TIO N • High gain bandwidth product 1 • Good thermal stability 2 base • Gold metallization ensures


    OCR Scan     		BFG31 OT223 BFG97. OT223. MSB002- MBB350 MBB351 711002b MSA035 BFG97 BFG31 MBB350 PDF

    diode cc 3053

    Abstract: cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2n3771 2N3772 K 3053 TRANSISTOR MIL-PRF19500
    Text: This documentation process conversion measures necessary to comply with this revision shall be completed by 30 September 1999 INCH-POUND MIL-PRF-19500/413C 30 July 1999 SUPERSEDING MIL-S-19500/413B 24 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER


    Original     		MIL-PRF-19500/413C MIL-S-19500/413B 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2N3772 K 3053 TRANSISTOR MIL-PRF19500 PDF

    bfg97

    Abstract: BFG31 TRANSISTOR FQ 4D4 TRANSISTOR 453.25
    Text: Philips Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability PIN DESCRIPTION • High gain bandwidth product 1 • Good thermal stability 2 base • Gold metallization ensures excellent reliability.


    OCR Scan     		BFG31 OT223 BFG97. OT223. MBB351 711GflEb 711002b bfg97 BFG31 TRANSISTOR FQ 4D4 TRANSISTOR 453.25 PDF

    diode cc 3053

    Abstract: cc 3053 diode cc 3053 2N6383 2N6384 2N6385 MIL-PRF19500 marking 4D npn
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 June 2009. MIL-PRF-19500/523C 16 March 2009 SUPERSEDING MIL-PRF-19500/523B 10 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER


    Original     		MIL-PRF-19500/523C MIL-PRF-19500/523B 2N6383, 2N6384, 2N6385, MIL-PRF-19500. diode cc 3053 cc 3053 diode cc 3053 2N6383 2N6384 2N6385 MIL-PRF19500 marking 4D npn PDF

    Q62702-P43-S2

    Abstract: No abstract text available
    Text: Si-Fotodetektoren Silicon Photodetectors 1. Integrierter Empfänger für Fernbedienungen 1. Integrated Remote Control Receiver Gehäuse Package Bestrahlungsstärke Threshold irradiance f kHz Halbwinkel Half angle <1> 30 ±55 0.35typ 0.5 max. Bestellnr. Ordering code


    OCR Scan     		35typ Q62702-P1196 Q62702-P1197 Q62702-P1198 Q62702-P1199 Q62702-P1200 Q62702-P1201 702-P836 Q62702-P848 Q62702-P849 Q62702-P43-S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 March 2013. INCH-POUND MIL-PRF-19500/262G 6 December 2013 SUPERSEDING MIL-S-19500/262F 19 February 1969 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER


    Original     		MIL-PRF-19500/262G MIL-S-19500/262F 2N1722 2N1724, MIL-PRF-19500. PDF

    scr 2n4444

    Abstract: light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN 2n4444 MRD3050 color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055
    Text: MRD3050 silicon thru MRD3056 NPN SILICON PHOTO TRANSISTOR . . . designed fo r application in industrial inspection, processing and control, counters, sorters, switching and logic circuits or any design requiring radiation sensitivity, and stable characteristics.


    OCR Scan     		MRD3050 MRD3056 MRD3050 AN-508, 2N5060 MPS6516 2N4444* 2N4444 scr 2n4444 light operated scr alarm MRD3056 photo transistor mrd3056 2n4444 transistor NPN color sensitive PHOTO TRANSISTOR 2n5060 transistor MRD3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEÎ1IC0ND GROUP 8 5 1 4 0 1 9 SP RA G UE . T3 D • SEMICONDS/ IC S 0513050 QD03bll =1 ■ 93D 03611 $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S o H Limits Igss V(flR]GSS Conditions


    OCR Scan     		QD03bll TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454 TMPFBC264A TMPFBC264B PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP 85 14 01 9 SPRAGUE. ^3 D • flS13A5Q Q003b i o T " | i S E M I C O N D S / ICS 9 3 D 0 3 6 1 0 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS


    OCR Scan     		flS13A5Q Q003b TMPF4858A TMPF4859 TMPF4859A 7MPF4860 TMPF4860A TMPF4861 TMPF4861A TMPF4867 PDF